The tilted illumination dark field high resolution imaging technique was applied to structures and defects of semiconductors and superconductors. We used a Hitachi-H9000 top entry microscope with a high resolution pole-piece of Cs=0.9 mm, operated at 300 Kv. Proper apertures, tilting angle and imaging conditions were chosen to minimize the phase shift due to aberrations. Since the transmitted beam was moved outside the aperture, the noise ratio was greatly reduced, which resulted in a significant enhancement of image contrast and apparent resolution. Images are not difficult to interpret if they have a clear correspondence to structure - information from image simulations in bright field mode can be used to assist in dark field image interpretation.An example in a semiconductor, GaAs/Ga0.49In0.51P2 superlattice imaged along [110] direction is shown in Figure 1. In this dark field image the GaAs and GaInP layers can be easily distinguished by their different contrast, and the difference in quality between both sides of interfaces is clear. An enlarged image in Figure 1 shows the defective area on the rough side of interface. Since this image shows the same pattern as the [110] projection of an fee structure, the major structural information about {111}, {200}, {220} planes can be obtained from this zone. Note that in bright field mode, [110] is not a good zone for imaging such multilayers.
Organellar relationships in the Golgi region of the pancreatic beta cell line, HIT-T15, visualized by high resolution electron tomography