Unstained Biological Specimens in High Resolution Electron Microscopy

1974 ◽  
Vol 32 ◽  
pp. 234-235
Author(s):  
M. K. Lamvik ◽  
J. M. Pullman ◽  
A. V. Crewe
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Heavy Atom ◽  
High Resolution Electron Microscopy ◽  
Scanning Transmission Electron Microscope ◽  
Dark Field ◽  
Structural Studies ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Scanning Transmission

Negative staining and high resolution shadowing have been extensively used for structural studies in electron microscopy. However, these techniques cover the specimen with a layer of heavy salt or metal, and hence do not allow determination of true mass distribution or localization of specific sites using heavy atom markers. A prerequisite for such structural studies is an examination of unstained specimens. For thin specimens dark field microscopy must be used to obtain adequate contrast. The scanning transmission electron microscope is preferred for such studies since elastic, energyloss, and unscattered electrons can be recorded and analyzed quantitatively to form images with a minimum of beam-induced damage.

Study of Structural Defects in CdZnTe Crystals by High Resolution Electron Microscopy

2011 ◽  
Vol 1341 ◽  
Author(s):  
A. Hossain ◽  
A. E. Bolotnikov ◽  
G. S. Camarda ◽  
Y. Cui ◽  
R. Gul ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Electron Microscope ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Scanning Transmission Electron Microscope ◽  
Structural Defects ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Scanning Transmission ◽  
Infrared Microscope

ABSTRACTWe investigated defects in CdZnTe crystals produced from various conditions and their impact on fabricated devices. In this study, we employed transmission and scanning transmission electron microscope (TEM and STEM), because defects at the nano-scale are not observed readily under an optical or infrared microscope, or by most other techniques. Our approach revealed several types of defects in the crystals, such as low-angle boundaries, dislocations and precipitates, which likely are major causes in degrading the electrical properties of CdZnTe devices, and eventually limiting their performance.

Defect Structures in Al-Ni-Rh Crystalline Approximants Studied by HREM and HAADF Techniques

2007 ◽  
Vol 561-565 ◽  
pp. 1353-1356 ◽  
Author(s):  
Wei Sun ◽  
Y.H. Chen ◽  
J.P. Wang ◽  
Z. Zhang
Keyword(s):  
Electron Microscopy ◽  
Structural Characteristics ◽  
Symmetry Plane ◽  
High Resolution Electron Microscopy ◽  
Dark Field ◽  
Structural Defects ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Scanning Transmission ◽  
Annular Dark Field

By means of a combination of high-resolution electron microscopy (HREM) and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) techniques, we have directly revealed that periodic arrangements in different manners for flattened hexagons constructed with atom columnar clusters can form two Al-Ni-Rh crystalline approximant phases. In contrast to periodic arrangements of flattened hexagons, configurations and distributions of various defects in these structurally-complicated alloy phases have been examined and their structural characteristics discussed. HREM observations clearly show that structural defects in Al-Ni-Rh crystalline approximants are of phason type and they are correlated with incorrect arrangements of atom columnar clusters. The distribution of high density planar defects can destroy the long-range periodicity in at least one direction in the pseudo decagonal symmetry plane. By means of the HAADF-STEM imaging technique, the existence of ill-formed atom columnar clusters in the core area of a linear defect, which is usually not visible in HREM observations, has been clearly revealed.

Origin of the superstructure elucidated by atomic resolution HAADF-STEM and HREM in the Ce10W22O81lanthanide tungstate phase

2018 ◽  
Vol 51 (2) ◽  
pp. 344-350 ◽  
Author(s):  
Loïc Patout ◽  
Abdelali Hallaoui ◽  
Thomas Neisius ◽  
Andrea P. C. Campos ◽  
Christian Dominici ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution Electron Microscopy ◽  
Dark Field ◽  
Atomic Resolution ◽  
Orthorhombic Unit Cell ◽  
Transmission Electron ◽  
New Information ◽  
Resolution Electron ◽  
Scanning Transmission ◽  
Annular Dark Field

The present paper provides new information on the attribution of the cationic sites of the orthorhombic Ce10W22O81crystal phase prepared in the CeO2–Ce2O3–WO3ternary system. Atomic resolution HAADF-STEM (high-angle annular dark-field scanning transmission electron microscopy) and HREM (high-resolution electron microscopy) investigations have highlighted the presence of two mixed columns of Ce and W cations along theaaxis that were previously assigned to pure W cations in the asymmetric unit. This discovery explains the presence of a commensurate superstructure doubling the orthorhombic unit-cell lengthao.

Design of a new objective lens for an HB-501A STEM

1991 ◽  
Vol 49 ◽  
pp. 416-417
Author(s):  
Earl J. Kirkland ◽  
Robert J. Keyse
Keyword(s):  
High Resolution ◽  
Spherical Aberration ◽  
Scanning Transmission Electron Microscope ◽  
Dark Field ◽  
Objective Lens ◽  
Specimen Holder ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Annular Dark Field ◽  
High Resolution Microscopy

An ultra-high resolution pole piece with a coefficient of spherical aberration Cs=0.7mm. was previously designed for a Vacuum Generators HB-501A Scanning Transmission Electron Microscope (STEM). This lens was used to produce bright field (BF) and annular dark field (ADF) images of (111) silicon with a lattice spacing of 1.92 Å. In this microscope the specimen must be loaded into the lens through the top bore (or exit bore, electrons traveling from the bottom to the top). Thus the top bore must be rather large to accommodate the specimen holder. Unfortunately, a large bore is not ideal for producing low aberrations. The old lens was thus highly asymmetrical, with an upper bore of 8.0mm. Even with this large upper bore it has not been possible to produce a tilting stage, which hampers high resolution microscopy.

High Resolution Transmission Electron Microscopy of an automobile catalytic converter

1990 ◽  
Vol 48 (4) ◽  
pp. 242-243
Author(s):  
Jan-Olle Malm ◽  
Jan-Olov Bovin
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Catalytic Converter ◽  
Active Material ◽  
Image Intensifier ◽  
High Resolution Electron Microscopy ◽  
Detailed Knowledge ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Atomic Surface

Understanding of catalytic processes requires detailed knowledge of the catalyst. As heterogeneous catalysis is a surface phenomena the understanding of the atomic surface structure of both the active material and the support material is of utmost importance. This work is a high resolution electron microscopy (HREM) study of different phases found in a used automobile catalytic converter.The high resolution micrographs were obtained with a JEM-4000EX working with a structural resolution better than 0.17 nm and equipped with a Gatan 622 TV-camera with an image intensifier. Some work (e.g. EDS-analysis and diffraction) was done with a JEM-2000FX equipped with a Link AN10000 EDX spectrometer. The catalytic converter in this study has been used under normal driving conditions for several years and has also been poisoned by using leaded fuel. To prepare the sample, parts of the monolith were crushed, dispersed in methanol and a drop of the dispersion was placed on the holey carbon grid.

scholarly journals Analytical High-resolution Electron Microscopy Reveals Organ-specific Nanoceria Bioprocessing

2017 ◽  
Vol 46 (1) ◽  
pp. 47-61 ◽  
Author(s):  
Uschi M. Graham ◽  
Robert A. Yokel ◽  
Alan K. Dozier ◽  
Lawrence Drummy ◽  
Krishnamurthy Mahalingam ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Analytical Electron Microscopy ◽  
High Resolution Electron Microscopy ◽  
Dark Field ◽  
Transmission Electron ◽  
Analytical Electron ◽  
Organ Specific

This is the first utilization of advanced analytical electron microscopy methods, including high-resolution transmission electron microscopy, high-angle annular dark field scanning transmission electron microscopy, electron energy loss spectroscopy, and energy-dispersive X-ray spectroscopy mapping to characterize the organ-specific bioprocessing of a relatively inert nanomaterial (nanoceria). Liver and spleen samples from rats given a single intravenous infusion of nanoceria were obtained after prolonged (90 days) in vivo exposure. These advanced analytical electron microscopy methods were applied to elucidate the organ-specific cellular and subcellular fate of nanoceria after its uptake. Nanoceria is bioprocessed differently in the spleen than in the liver.

Structure of InAs Quantum Dots in Si Matrix Investigated by High Resolution Electron Microscopy

1999 ◽  
Vol 571 ◽  
Author(s):  
N. D. Zakharov ◽  
P. Werner ◽  
V. M. Ustinov ◽  
A.R. Kovsh ◽  
G. E. Cirlin ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Critical Thickness ◽  
High Resolution Electron Microscopy ◽  
Geometrical Parameters ◽  
Inas Quantum Dots ◽  
Temperature Growth ◽  
Transmission Electron ◽  
Resolution Electron

ABSTRACTQuantum dot structures containing 2 and 7 layers of small coherent InAs clusters embedded into a Si single crystal matrix were grown by MBE. The structure of these clusters was investigated by high resolution transmission electron microscopy. The crystallographic quality of the structure severely depends on the substrate temperature, growth sequence, and the geometrical parameters of the sample. The investigation demonstrates that Si can incorporate a limited volume of InAs in a form of small coherent clusters about 3 nm in diameter. If the deposited InAs layer exceeds a critical thickness, large dislocated InAs precipitates are formed during Si overgrowth accumulating the excess of InAs.

Silicon-Sapphire Interface: A High Resolution Electron Microscopy Study

1980 ◽  
Vol 2 ◽  
Author(s):  
Fernando A. Ponce
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Silicon Layer ◽  
High Resolution Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Resolution Limit ◽  
High Concentration ◽  
Transmission Electron ◽  
Resolution Electron

ABSTRACTThe structure of the silicon-sapphire interface of CVD silicon on a (1102) sapphire substrate has been studied in crøss section by high resolution transmission electron microscopy. Multibeam images of the interface region have been obtained where both the silicon and sapphire lattices are directly resolved. The interface is observed to be planar and abrupt to the instrument resolution limit of 3 Å. No interfacial phase is evident. Defects are inhomogeneously distributed at the interface: relatively defect-free regions are observed in the silicon layer in addition to regions with high concentration of defects.

High Resolution Electron Microscopy Observations About The Interface Structure In A Ti/TiN Multilayer Material

1991 ◽  
Vol 238 ◽  
Author(s):  
X. G. Ning ◽  
L. P. Guo ◽  
R. F. Huang ◽  
J. Gong ◽  
B. H. Yu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Orientation Relationship ◽  
High Resolution Electron Microscopy ◽  
Interface Structure ◽  
Multilayer Material ◽  
Transition Layers ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Specific Orientation

ABSTRACTThe interface structure in a Ti/TiN multilayer material has been investigated by high resolution transmission electron microscopy (HRTEM). It was shown that the α-Ti and β-TiN layers consisted of many cylindrical crystals growing along the close packed directions normal to the surface of a stainless steel. There existed specific orientation relationship at the Ti/TiN interfaces without transition layers: (111)TiN ‖ (001)Ti, [110]TiN ‖ [100]Ti. However there was no such orientation relationship at the Ti/TiN interfaces with TixN (x >1) transition layers.

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