Facile Access to NaOC≡As and Its Use as an Arsenic Source To Form Germylidenylarsinidene Complexes

2017 ◽  
Vol 129 (26) ◽  
pp. 7573-7577 ◽  
Author(s):  
Shenglai Yao ◽  
Yves Grossheim ◽  
Arseni Kostenko ◽  
Ernesto Ballestero-Martínez ◽  
Stefan Schutte ◽  
...  
Keyword(s):  
Arsenic Source

Study of dislocation loops in Arsenic-Rich as-grown GaAs

1987 ◽  
Vol 45 ◽  
pp. 350-351
Author(s):  
Byung-Teak Lee
Keyword(s):  
Point Defects ◽  
Electronic Devices ◽  
Arsenic Concentration ◽  
Stoichiometric Compound ◽  
Dislocation Loops ◽  
Gaas Crystal ◽  
Ion Milling ◽  
Transmission Electron ◽  
Arsenic Source ◽  
High Arsenic

Grown-in dislocations in GaAs have been a major obstacle in utilizing this material for the potential electronic devices. Although it has been proposed in many reports that supersaturation of point defects can generate dislocation loops in growing crystals and can be a main formation mechanism of grown-in dislocations, there are very few reports on either the observation or the structural analysis of the stoichiometry-generated loops. In this work, dislocation loops in an arsenic-rich GaAs crystal have been studied by transmission electron microscopy.The single crystal with high arsenic concentration was grown using the Horizontal Bridgman method. The arsenic source temperature during the crystal growth was about 630°C whereas 617±1°C is normally believed to be optimum one to grow a stoichiometric compound. Samples with various orientations were prepared either by chemical thinning or ion milling and examined in both a JEOL JEM 200CX and a Siemens Elmiskop 102.

Facile Access to NaOC≡As and Its Use as an Arsenic Source To Form Germylidenylarsinidene Complexes

2017 ◽  
Vol 56 (26) ◽  
pp. 7465-7469 ◽  
Author(s):  
Shenglai Yao ◽  
Yves Grossheim ◽  
Arseni Kostenko ◽  
Ernesto Ballestero-Martínez ◽  
Stefan Schutte ◽  
...  
Keyword(s):  
Arsenic Source

GaAs Solar Cell Using an Alternate Arsenic Source

1989 ◽  
Vol 145 ◽  
Author(s):  
V. S. Sundaram ◽  
J. E. Avery ◽  
G. R. Girard ◽  
H. E. Hager ◽  
A. G. Thompson ◽  
...  
Keyword(s):  
Solar Cell ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Chemical Vapor ◽  
Open Circuit ◽  
Organic Chemical ◽  
Tertiary Butyl ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Arsenic Source

AbstractUsing an alternate arsenic source, namely, Tertiary Butyl Arsine, a concentrator GaAs solar cell has been grown in a low pressure metal organic chemical vapor deposition reactor. Under 72 sun, air mass 1.5 illumination, the cell had an open circuit voltage of 1.1 V, a fill factor of 83% and an overall efficiency of 21%.

Growth of GaInAsSb using tertiarybutylarsine as arsenic source

1994 ◽  
Vol 145 (1-4) ◽  
pp. 492-497 ◽  
Author(s):  
M. Sopanen ◽  
T. Koljonen ◽  
H. Lipsanen ◽  
T. Tuomi
Keyword(s):  
Arsenic Source

Aquifer arsenic source

2011 ◽  
Vol 4 (10) ◽  
pp. 655-656 ◽  
Author(s):  
J.M. McArthur ◽  
P. Ravenscroft ◽  
O. Sracek
Keyword(s):  
Arsenic Source
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