Nucleation mechanism of polyhydroxybutyrate and poly(hydroxybutyrate-co-hydroxyhexanoate) crystallized by orotic acid as a nucleating agent

2010 ◽  
Vol 115 (2) ◽  
pp. 709-715 ◽  
Author(s):  
Nicolas Jacquel ◽  
Koichirou Tajima ◽  
Nobuo Nakamura ◽  
Hideo Kawachi ◽  
Pengju Pan ◽  
...  
2009 ◽  
Vol 114 (2) ◽  
pp. 1287-1294 ◽  
Author(s):  
Nicolas Jacquel ◽  
Koichirou Tajima ◽  
Nobuo Nakamura ◽  
Toshio Miyagawa ◽  
Pengju Pan ◽  
...  
Keyword(s):  

RSC Advances ◽  
2016 ◽  
Vol 6 (90) ◽  
pp. 87169-87178 ◽  
Author(s):  
Xiao-bo Xu ◽  
Qing Li ◽  
Cheng-dong Xiong

In the interest of improving the crystallization rate of poly(p-dioxanone) (PPDO), an inclusion complex (IC) based on β-cyclodextrin (β-CD) and polyglycolide (PGA) serving as a green nucleating agent for PPDO was achieved by a solution technique.


2015 ◽  
Vol 133 (5) ◽  
pp. n/a-n/a ◽  
Author(s):  
Jinjun Yang ◽  
Yichun Chen ◽  
Lei Hua ◽  
Rong Liang ◽  
Dianxing Zhu

Polymer ◽  
2007 ◽  
Vol 48 (1) ◽  
pp. 401-408 ◽  
Author(s):  
Kiyoka Okada ◽  
Kaori Watanabe ◽  
Tsuyoshi Urushihara ◽  
Akihiko Toda ◽  
Masamichi Hikosaka

2015 ◽  
Vol 4 (4) ◽  
pp. 207-214
Author(s):  
Roland Vogel ◽  
Harald Brunig ◽  
Liane Haussler

RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27150-27161 ◽  
Author(s):  
Ping Song ◽  
Lin Sang ◽  
Liuchun Zheng ◽  
Chao Wang ◽  
Kankan Liu ◽  
...  

The bound water of orotic acid and its dehydration transition play a negative role in nucleation effects on PLLA crystallization.


Author(s):  
L. Hultman ◽  
C.-H. Choi ◽  
R. Kaspi ◽  
R. Ai ◽  
S.A. Barnett

III-V semiconductor films nucleate by the Stranski-Krastanov (SK) mechanism on Si substrates. Many of the extended defects present in the films are believed to result from the island formation and coalescence stage of SK growth. We have recently shown that low (-30 eV) energy, high flux (4 ions per deposited atom), Ar ion irradiation during nucleation of III-V semiconductors on Si substrates prolongs the 1ayer-by-layer stage of SK nucleation, leading to a decrease in extended defect densities. Furthermore, the epitaxial temperature was reduced by >100°C due to ion irradiation. The effect of ion bombardment on the nucleation mechanism was explained as being due to ion-induced dissociation of three-dimensional islands and ion-enhanced surface diffusion.For the case of InAs grown at 380°C on Si(100) (11% lattice mismatch), where island formation is expected after ≤ 1 monolayer (ML) during molecular beam epitaxy (MBE), in-situ reflection high-energy electron diffraction (RHEED) showed that 28 eV Ar ion irradiation prolonged the layer-by-layer stage of SK nucleation up to 10 ML. Otherion energies maintained layer-by-layer growth to lesser thicknesses. The ion-induced change in nucleation mechanism resulted in smoother surfaces and improved the crystalline perfection of thicker films as shown by transmission electron microscopy and X-ray rocking curve studies.


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