ChemInform Abstract: Recent Progress in Solid Phase Heterocycle Synthesis

ChemInform ◽  
2010 ◽  
Vol 30 (2) ◽  
pp. no-no
Author(s):  
J. W. CORBETT
Biosensors ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 54 ◽  
Author(s):  
Nasrin Razmi ◽  
Mohammad Hasanzadeh ◽  
Magnus Willander ◽  
Omer Nur

Escherichia coli O157:H7 (E. coli O157:H7) is a pathogenic strain of Escherichia coli which has issued as a public health threat because of fatal contamination of food and water. Therefore, accurate detection of pathogenic E. coli is important in environmental and food quality monitoring. In spite of their advantages and high acceptance, culture-based methods, enzyme-linked immunosorbent assays (ELISAs), polymerase chain reaction (PCR), flow cytometry, ATP bioluminescence, and solid-phase cytometry have various drawbacks, including being time-consuming, requiring trained technicians and/or specific equipment, and producing biological waste. Therefore, there is necessity for affordable, rapid, and simple approaches. Electrochemical biosensors have shown great promise for rapid food- and water-borne pathogen detection. Over the last decade, various attempts have been made to develop techniques for the rapid quantification of E. coli O157:H7. This review covers the importance of E. coli O157:H7 and recent progress (from 2015 to 2020) in the development of the sensitivity and selectivity of electrochemical sensors developed for E. coli O157:H7 using different nanomaterials, labels, and electrochemical transducers.


ChemInform ◽  
1988 ◽  
Vol 19 (3) ◽  
Author(s):  
J. VAN RIETSCHOTEN ◽  
J. M. SABATIER ◽  
M. TESSIER ◽  
C. GRANIER ◽  
E. PEDROSO ◽  
...  

ChemInform ◽  
2012 ◽  
Vol 43 (26) ◽  
pp. no-no
Author(s):  
Chai Hoon Soh ◽  
Yulin Lam

2016 ◽  
Vol 8 (29) ◽  
pp. 5773-5788 ◽  
Author(s):  
Hiroyuki Kataoka ◽  
Atsushi Ishizaki ◽  
Keita Saito

Configurations of various devices for various SPME techniques.


1984 ◽  
Vol 35 ◽  
Author(s):  
G.L. Olson

ABSTRACTRecent progress in studies of temperature dependent kinetic competition during solid phase crystallization of silicon is reviewed. Specific areas which are emphasized include: the enhancement of solid phase epitaxial growth rates by impurity-induced changes in electronic properties at the crystal/amorphous interface, the influence of impurity diffusion and precipitation in amorphous silicon on the kinetics of epitaxial growth, the effects of impurities on the kinetic competition between solid phase epitaxy and random crystallization, and the kinetics of solid phase crystallization at very high temperatures in silicon.


1983 ◽  
Vol 23 ◽  
Author(s):  
J.A. Roth ◽  
G.L. Olson ◽  
L.D. Hess

ABSTRACTWe review recent progress in the growth of siliconon-insulator films by lateral solid phase epitaxy. The temperature dependence of the rates of random crystallization and solid phase epitaxy are used to predict the maximum growth of Si over oxide achievable by this technique. Actual overgrowth distances of 10 μm obtained in UHV-deposited films are considerably less than the values predicted. Several possible causes of the difference between observed and predicted overgrowth are discussed.


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