ChemInform Abstract: Spin Transfer Torque Switching and Perpendicular Magnetic Anisotropy in Full Heusler Alloy CO2FeAl-Based Tunnel Junctions

ChemInform ◽  
2015 ◽  
Vol 46 (47) ◽  
pp. no-no
Author(s):  
H. Sukegawa ◽  
Z. C. Wen ◽  
S. Kasai ◽  
K. Inomata ◽  
S. Mitani
SPIN ◽  
2014 ◽  
Vol 04 (04) ◽  
pp. 1440023 ◽  
Author(s):  
H. SUKEGAWA ◽  
Z. C. WEN ◽  
S. KASAI ◽  
K. INOMATA ◽  
S. MITANI

Some of Co -based full Heusler alloys have remarkable properties in spintronics, that is, high spin polarization of conduction electrons and low magnetic damping. Owing to these properties, magnetic tunnel junctions (MTJs) using Co -based full Heusler alloys are potentially of particular importance for spintronic application such as magnetoresistive random access memories (MRAMs). Recently, we have first demonstrated spin transfer torque (STT) switching and perpendicular magnetic anisotropy (PMA), which are required for developing high-density MRAMs, in full-Heusler Co 2 FeAl alloy-based MTJs. In this review, the main results of the experimental demonstrations are shown with referring to related issues, and the prospect of MTJs using Heusler alloys is also discussed.


SPIN ◽  
2014 ◽  
Vol 04 (04) ◽  
pp. 1440024 ◽  
Author(s):  
QINLI MA ◽  
ATSUSHI SUGIHARA ◽  
KAZUYA SUZUKI ◽  
XIANMIN ZHANG ◽  
TERUNOBU MIYAZAKI ◽  
...  

Films of the Mn -based tetragonal Heusler-like alloys, such as Mn – Ga , exhibit a large perpendicular magnetic anisotropy (PMA), small damping constant, small saturation magnetization and large spin polarizations. These properties are attractive for the application to the next generation high density spin-transfer-torque (STT) magnetic random access memory (STT-MRAM). We reviewed the structure, magnetic properties and Gilbert damping of the alloy films with large PMA, and the current status of research on tunnel magnetoresistance (TMR) in perpendicular magnetic tunnel junctions (p-MTJs) based on Mn -based tetragonal Heusler-like alloy electrode, and also discuss the issues for the application of those to STT-MRAM.


2015 ◽  
Vol 15 (10) ◽  
pp. 8336-8339 ◽  
Author(s):  
Sol Jung ◽  
Haein Yim

Spin transfer torque (STT) induced switching of magnetization has led to intriguing and practical possibilities for magnetic random access memory (MRAM). This form of memory, called STT-MRAM, is a strong candidate for future memory applications. This application usually requires a large perpendicular magnetic anisotropy (PMA), large coercivity, and low saturation magnetization. Therefore, we propose an amorphous ferromagnetic CoSiB alloy and investigate CoSiB/Pd multilayer thin films, which have a large PMA, large coercivity, and low saturation magnetization. In this research, we propose a remarkable layered structure that could be a candidate for future applications and try to address a few factors that might affect the variation of PMA, coercivity, and saturation magnetization in the CoSiB/Pd multilayers. We investigate the magnetic properties of the CoSiB/Pd multilayers with various thicknesses of the CoSiB layer. The coercivity was obtained with a maximum of 228 Oe and a minimum value of 91 Oe in the [CoSiB 7 Å/Pd 14 Å]5 and [CoSiB 9 Å/Pd 14 Å]5 multilayers, respectively. The PMA arises from tCoSiB = 3 Å to tCoSiB = 9 Å and disappears after tCoSiB = 9 Å.


2017 ◽  
Vol 110 (17) ◽  
pp. 172403 ◽  
Author(s):  
Jie Zhang ◽  
Timothy Phung ◽  
Aakash Pushp ◽  
Yari Ferrante ◽  
Jaewoo Jeong ◽  
...  

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