Dislocation Processes in MgO Single Crystals Observed by In-situ Deformation in the HVEM

1979 ◽  
Vol 14 (11) ◽  
pp. 1329-1329 ◽  
Author(s):  
F. Appel ◽  
U. Messerschmidt
2012 ◽  
Vol 122 (3) ◽  
pp. 618-621 ◽  
Author(s):  
J. Veselý ◽  
M. Cieslar ◽  
J. Kopeček

2006 ◽  
Vol 509 ◽  
pp. 57-62 ◽  
Author(s):  
Nicole Clément ◽  
Mustafa Benyoucef ◽  
M. Legros ◽  
Pierre Caron ◽  
Armand Coujou

An in situ study of the plastic deformation of <001> single crystals of an industrial superalloy has been performed at 850 °C in a TEM to observe directly the micromechanisms which control the deformation under the actual temperature and stress conditions experienced by this material in aeroengines. A comparison between the creation and propagation modes of moving dislocations in the standard microstructure after annealing and the rafted microstructure after 20 h of creep at 1050°C evidence the important role of the width of the γ channels as well as the strength of the γ/γ’ interface in controlling the shearing events of γ’ channels.


Author(s):  
E. Ruedl ◽  
P. Schiller

The low Z metal aluminium is a potential matrix material for the first wall in fusion reactors. A drawback in the application of A1 is the rel= atively high amount of He produced in it under fusion reactor conditions. Knowledge about the behaviour of He during irradiation and deformation in Al, especially near the surface, is therefore important.Using the TEM we have studied Al disks of 3 mm diameter and 0.2 mm thickness, which were perforated at the centre by double jet polishing. These disks were bombarded at∽200°C to various doses with α-particles, impinging at any angle and energy up to 1.5 MeV at both surfaces. The details of the irradiations are described in Ref.1. Subsequent observation indicated that in such specimens uniformly distributed He-bubbles are formed near the surface in a layer several μm thick (Fig.1).After bombardment the disks were deformed at 20°C during observation by means of a tensile device in a Philips EM 300 microscope.


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