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Photoelectrochemical Water Splitting with p‐Type Metal Oxide Semiconductor Photocathodes
ChemSusChem
◽
10.1002/cssc.201802596
◽
2019
◽
Vol 12
(9)
◽
pp. 1835-1845
◽
Cited By ~ 21
Author(s):
Youn Jeong Jang
◽
Jae Sung Lee
Keyword(s):
Metal Oxide
◽
Water Splitting
◽
Metal Oxide Semiconductor
◽
Photoelectrochemical Water Splitting
◽
Oxide Semiconductor
◽
P Type
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References
Development of Metal-Oxide-Semiconductor (MOS) Electrodes for Photoelectrochemical Water Splitting
ECS Meeting Abstracts
◽
10.1149/ma2012-02/14/1714
◽
2012
◽
Keyword(s):
Metal Oxide
◽
Water Splitting
◽
Metal Oxide Semiconductor
◽
Photoelectrochemical Water Splitting
◽
Oxide Semiconductor
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Metal-Oxide-Semiconductor Nanocomposites for Photoelectrochemical Water Splitting
ECS Meeting Abstracts
◽
10.1149/ma2012-02/21/2160
◽
2012
◽
Keyword(s):
Metal Oxide
◽
Water Splitting
◽
Metal Oxide Semiconductor
◽
Photoelectrochemical Water Splitting
◽
Oxide Semiconductor
◽
Semiconductor Nanocomposites
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Selective Growth of B- and C-Doped SiGe Layers in Unprocessed and Recessed Si Openings for p-type Metal-Oxide-Semiconductor Field-Effect Transistors Application
Journal of The Electrochemical Society
◽
10.1149/1.3363736
◽
2010
◽
Vol 157
(6)
◽
pp. H633
◽
Cited By ~ 13
Author(s):
M. Kolahdouz
◽
P. Tabib Zadeh Adibi
◽
A. Afshar Farniya
◽
S. Shayestehaminzadeh
◽
E. Trybom
◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Selective Growth
◽
Oxide Semiconductor
◽
P Type
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Solar water splitting with a composite silicon/metal oxide semiconductor electrode
10.1117/12.681980
◽
2006
◽
Author(s):
Yoshihiro Nakato
◽
Naoaki Kato
◽
Akihito Imanishi
◽
Takashi Sugiura
◽
Shunsuke Ogawa
◽
...
Keyword(s):
Metal Oxide
◽
Water Splitting
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Solar Water
◽
Solar Water Splitting
◽
Semiconductor Electrode
◽
Composite Silicon
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Impact of Ge Content on Flicker Noise Behavior of Strained-SiGe p-Type Metal–Oxide–Semiconductor Field-Effect Transistors
Japanese Journal of Applied Physics
◽
10.1143/jjap.48.04c036
◽
2009
◽
Vol 48
(4)
◽
pp. 04C036
◽
Cited By ~ 5
Author(s):
San-Lein Wu
◽
Chung Yi Wu
◽
Hau-Yu Lin
◽
Cheng-Wen Kuo
◽
Shin-Hsin Chen
◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Flicker Noise
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
P Type
◽
Strained Sige
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Properties of rapid thermal oxidized p-type germanium and its metal-oxide-semiconductor capacitor structure
Materials Today Proceedings
◽
10.1016/j.matpr.2018.12.070
◽
2019
◽
Vol 7
◽
pp. 744-753
◽
Cited By ~ 1
Author(s):
Norani Ab Manaf
◽
Abdul Manaf Hashim
Keyword(s):
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◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Capacitor Structure
◽
P Type
◽
Metal Oxide Semiconductor Capacitor
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Correlation between Charge Pumping Method and Direct-Current Current Voltage Method in p-Type Metal-Oxide-Semiconductor Field-Effect Transistors
Japanese Journal of Applied Physics
◽
10.1143/jjap.38.4696
◽
1999
◽
Vol 38
(Part 1, No. 8)
◽
pp. 4696-4698
◽
Cited By ~ 6
Author(s):
Bin-Bin Jie
◽
Kok-Hooi Ng
◽
Ming-Fu Li
◽
Keng-Foo Lo
Keyword(s):
Metal Oxide
◽
Direct Current
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Charge Pumping
◽
Current Voltage
◽
P Type
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Novel Si/SiC Heterojunction Lateral Double-diffused Metal Oxide Semiconductor Field Effect Transistor with P-type Buried Layer Breaking Silicon Limit
Chinese Physics B
◽
10.1088/1674-1056/abcf45
◽
2020
◽
Author(s):
Baoxing Duan
◽
Xin Huang
◽
Haitao Song
◽
Yandong Wang
◽
Yintang Yang
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistor
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
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Effect Transistor
◽
Buried Layer
◽
P Type
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Compact Hot-Electron Induced Oxide Trapping Charge and Post-Stress Drain Current Modeling for Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect-Transistors
Japanese Journal of Applied Physics
◽
10.1143/jjap.47.6200
◽
2008
◽
Vol 47
(8)
◽
pp. 6200-6204
◽
Cited By ~ 1
Author(s):
Chorng-Jye Sheu
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Drain Current
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Hot Electron
◽
Buried Channel
◽
P Type
◽
Post Stress
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Investigation of active Si pitting and its impact on 0.15 and 0.30 μm n-type metal–oxide–semiconductor and p-type metal–oxide–semiconductor transistors
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena
◽
10.1116/1.1518972
◽
2002
◽
Vol 20
(6)
◽
pp. 2288
◽
Cited By ~ 1
Author(s):
C. S. Chua
◽
E. F. Chor
◽
F. Goh
◽
A. See
◽
L. Chan
Keyword(s):
Metal Oxide
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
P Type
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