Compact Hot-Electron Induced Oxide Trapping Charge and Post-Stress Drain Current Modeling for Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect-Transistors

2008 ◽  
Vol 47 (8) ◽  
pp. 6200-6204 ◽  
Author(s):  
Chorng-Jye Sheu
2002 ◽  
Vol 743 ◽  
Author(s):  
Z. Y. Fan ◽  
J. Li ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
Y. Liu ◽  
...  

ABSTRACTThe fabrication and characterization of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with the δ-doped barrier are reported. The incorporation of the SiO2 insulated-gate and the δ-doped barrier into HFET structures reduces the gate leakage and improves the 2D channel carrier mobility. The device has a high drain-current-driving and gate-control capabilities as well as a very high gate-drain breakdown voltage of 200 V, a cutoff frequency of 15 GHz and a maximum frequency of oscillation of 34 GHz for a gate length of 1 μm. These characteristics indicate a great potential of this structure for high-power-microwave applications.


2009 ◽  
Vol 48 (4) ◽  
pp. 04C036 ◽  
Author(s):  
San-Lein Wu ◽  
Chung Yi Wu ◽  
Hau-Yu Lin ◽  
Cheng-Wen Kuo ◽  
Shin-Hsin Chen ◽  
...  

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