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Correlation between Charge Pumping Method and Direct-Current Current Voltage Method in p-Type Metal-Oxide-Semiconductor Field-Effect Transistors
Japanese Journal of Applied Physics
◽
10.1143/jjap.38.4696
◽
1999
◽
Vol 38
(Part 1, No. 8)
◽
pp. 4696-4698
◽
Cited By ~ 6
Author(s):
Bin-Bin Jie
◽
Kok-Hooi Ng
◽
Ming-Fu Li
◽
Keng-Foo Lo
Keyword(s):
Metal Oxide
◽
Direct Current
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Charge Pumping
◽
Current Voltage
◽
P Type
Download Full-text
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References
Selective Growth of B- and C-Doped SiGe Layers in Unprocessed and Recessed Si Openings for p-type Metal-Oxide-Semiconductor Field-Effect Transistors Application
Journal of The Electrochemical Society
◽
10.1149/1.3363736
◽
2010
◽
Vol 157
(6)
◽
pp. H633
◽
Cited By ~ 13
Author(s):
M. Kolahdouz
◽
P. Tabib Zadeh Adibi
◽
A. Afshar Farniya
◽
S. Shayestehaminzadeh
◽
E. Trybom
◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Selective Growth
◽
Oxide Semiconductor
◽
P Type
Download Full-text
Impact of Ge Content on Flicker Noise Behavior of Strained-SiGe p-Type Metal–Oxide–Semiconductor Field-Effect Transistors
Japanese Journal of Applied Physics
◽
10.1143/jjap.48.04c036
◽
2009
◽
Vol 48
(4)
◽
pp. 04C036
◽
Cited By ~ 5
Author(s):
San-Lein Wu
◽
Chung Yi Wu
◽
Hau-Yu Lin
◽
Cheng-Wen Kuo
◽
Shin-Hsin Chen
◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Flicker Noise
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
P Type
◽
Strained Sige
Download Full-text
Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks
Applied Physics Letters
◽
10.1063/1.4773914
◽
2013
◽
Vol 102
(1)
◽
pp. 012106
◽
Cited By ~ 4
Author(s):
Szu-Han Ho
◽
Ting-Chang Chang
◽
Bin-Wei Wang
◽
Ying-Shin Lu
◽
Wen-Hung Lo
◽
...
Keyword(s):
Metal Oxide
◽
High Voltage
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Gate Stacks
◽
Metal Gate
◽
Charge Pumping
Download Full-text
Compact Hot-Electron Induced Oxide Trapping Charge and Post-Stress Drain Current Modeling for Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect-Transistors
Japanese Journal of Applied Physics
◽
10.1143/jjap.47.6200
◽
2008
◽
Vol 47
(8)
◽
pp. 6200-6204
◽
Cited By ~ 1
Author(s):
Chorng-Jye Sheu
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Drain Current
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Hot Electron
◽
Buried Channel
◽
P Type
◽
Post Stress
Download Full-text
Investigation of Hot Carrier Degradation in Shallow-Trench-Isolation-Based High-Voltage Laterally Diffused Metal–Oxide–Semiconductor Field-Effect Transistors by a Novel Direct Current Current–Voltage Technique
Japanese Journal of Applied Physics
◽
10.7567/jjap.51.04dp08
◽
2012
◽
Vol 51
(4S)
◽
pp. 04DP08
◽
Cited By ~ 1
Author(s):
Yandong He
◽
Ganggang Zhang
Keyword(s):
High Voltage
◽
Direct Current
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Shallow Trench Isolation
◽
Hot Carrier
◽
Current Voltage
◽
Trench Isolation
Download Full-text
Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates
Applied Physics Letters
◽
10.1063/1.1417515
◽
2001
◽
Vol 79
(20)
◽
pp. 3344-3346
◽
Cited By ~ 194
Author(s):
Minjoo L. Lee
◽
C. W. Leitz
◽
Z. Cheng
◽
A. J. Pitera
◽
T. Langdo
◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
P Type
Download Full-text
Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN p-Type Metal–Oxide–Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition
Japanese Journal of Applied Physics
◽
10.1143/jjap.49.04dc08
◽
2010
◽
Vol 49
(4)
◽
pp. 04DC08
Author(s):
Liangliang Zhang
◽
Changze Liu
◽
Runsheng Wang
◽
Ru Huang
◽
Tao Yu
◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Stress Condition
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Negative Bias
◽
Negative Bias Temperature Instability
◽
Bias Temperature Instability
◽
P Type
Download Full-text
Vox/Eox-Driven Breakdown of Ultrathin SiON Gate Dielectrics in p-Type Metal Oxide Semiconductor Field Effect Transistors under Low-Voltage Inversion Stress
Japanese Journal of Applied Physics
◽
10.1143/jjap.46.7
◽
2007
◽
Vol 46
(1)
◽
pp. 7-13
◽
Cited By ~ 2
Author(s):
Shimpei Tsujikawa
◽
Katsuya Shiga
◽
Hiroshi Umeda
◽
Jiro Yugami
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Low Voltage
◽
Gate Dielectrics
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
P Type
Download Full-text
Hot Carrier Degradations of Dynamic Threshold Silicon on Insulator p-Type Metal–Oxide–Semiconductor Field Effect Transistors
Japanese Journal of Applied Physics
◽
10.1143/jjap.43.1300
◽
2004
◽
Vol 43
(4A)
◽
pp. 1300-1304
Author(s):
Tien-Sheng Chao
◽
Yao-Jen Lee
◽
Chun-Yang Huang
◽
Horng-Chih Lin
◽
Yiming Li
◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Silicon On Insulator
◽
Oxide Semiconductor
◽
Dynamic Threshold
◽
Hot Carrier
◽
P Type
Download Full-text
Drive current enhancement in p-type metal–oxide–semiconductor field-effect transistors under shear uniaxial stress
Applied Physics Letters
◽
10.1063/1.1841452
◽
2004
◽
Vol 85
(25)
◽
pp. 6188-6190
◽
Cited By ~ 25
Author(s):
L. Shifren
◽
X. Wang
◽
P. Matagne
◽
B. Obradovic
◽
C. Auth
◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Uniaxial Stress
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Drive Current
◽
P Type
Download Full-text
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