Equivalent circuit modeling of a superconducting synchronous generator with double electromagnetic shields (Part II. Equivalent circuit model and estimation of its constants for design examples)

We propose an improved lumped-parameter equivalent circuit model to describe S-shaped I–V kinks observed from organic solar cells. Firstly, to predict the S-shaped I–V kinks accurately in both the first and fourth quadrants, a shunt resistor in parallel with extraction diode is added to our previous model. Secondly, based on the Newton–Raphson method, we derive a solution to our improved circuit. Thirdly, our solution is verified by the method of least squares and experiments. Finally, compared with our previous work, the improved circuit has higher accuracy in demonstrating S-shaped I–V kinks in the first and fourth quadrants. Such an improved model is suitable for circuit simulations of organic solar cells.

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Equivalent Circuit Model for Electric Double Layer Capacitors and its Applications

IEEJ Transactions on Power and Energy ◽

10.1541/ieejpes.131.524 ◽

2011 ◽

Vol 131 (6) ◽

pp. 524-529

Author(s):

Susumu Yamashiro ◽

Koichi Nakamura

Keyword(s):

Equivalent Circuit ◽

Double Layer ◽

Electric Double Layer ◽

Equivalent Circuit Model ◽

Circuit Model ◽

Double Layer Capacitors ◽

Electric Double Layer Capacitors

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An Equivalent Circuit Model for Vertical Comb Drive MEMS Optical Scanner Controlled by Pulse Width Modulation

IEEJ Transactions on Sensors and Micromachines ◽

10.1541/ieejsmas.132.1 ◽

2012 ◽

Vol 132 (1) ◽

pp. 1-9 ◽

Cited By ~ 7

Author(s):

Satoshi Maruyama ◽

Muneki Nakada ◽

Makoto Mita ◽

Takuya Takahashi ◽

Hiroyuki Fujita ◽

...

Keyword(s):

Equivalent Circuit ◽

Pulse Width ◽

Pulse Width Modulation ◽

Equivalent Circuit Model ◽

Circuit Model ◽

Comb Drive ◽

Optical Scanner

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Equivalent Circuit Modeling of a Dual-Gate Graphene FET

Electronics ◽

10.3390/electronics10010063 ◽

2020 ◽

Vol 10 (1) ◽

pp. 63

Author(s):

Saima Hasan ◽

Abbas Z. Kouzani ◽

M A Parvez Mahmud

Keyword(s):

Equivalent Circuit ◽

Gate Voltage ◽

Voltage Dependence ◽

Drain Current ◽

Bilayer Graphene ◽

Circuit Modeling ◽

Equivalent Circuit Modeling ◽

Dual Gate ◽

Source Voltage ◽

Transit Frequency

This paper presents a simple and comprehensive model of a dual-gate graphene field effect transistor (FET). The quantum capacitance and surface potential dependence on the top-gate-to-source voltage were studied for monolayer and bilayer graphene channel by using equivalent circuit modeling. Additionally, the closed-form analytical equations for the drain current and drain-to-source voltage dependence on the drain current were investigated. The distribution of drain current with voltages in three regions (triode, unipolar saturation, and ambipolar) was plotted. The modeling results exhibited better output characteristics, transfer function, and transconductance behavior for GFET compared to FETs. The transconductance estimation as a function of gate voltage for different drain-to-source voltages depicted a proportional relationship; however, with the increase of gate voltage this value tended to decline. In the case of transit frequency response, a decrease in channel length resulted in an increase in transit frequency. The threshold voltage dependence on back-gate-source voltage for different dielectrics demonstrated an inverse relationship between the two. The analytical expressions and their implementation through graphical representation for a bilayer graphene channel will be extended to a multilayer channel in the future to improve the device performance.

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A Novel, Improved Equivalent Circuit Model for Double-Sided Linear Induction Motor

Electronics ◽

10.3390/electronics10141644 ◽

2021 ◽

Vol 10 (14) ◽

pp. 1644

Author(s):

Qian Zhang ◽

Huijuan Liu ◽

Tengfei Song ◽

Zhenyang Zhang

Keyword(s):

Finite Element ◽

Finite Element Model ◽

Equivalent Circuit ◽

Skin Effect ◽

Equivalent Circuit Model ◽

Element Model ◽

Circuit Model ◽

End Effects ◽

3D Finite Element ◽

Linear Induction

A novel, improved equivalent circuit model of double-sided linear induction motors (DLIMs) is proposed, which takes the skin effect and the nonzero leakage reactance of the secondary, longitudinal, and transverse end effects into consideration. Firstly, the traditional equivalent circuit with longitudinal and transverse end effects are briefly reviewed. Additionally, the correction coefficients for longitudinal and transverse end effects derived by one-dimensional analysis models are given. Secondly, correction factors for skin effect, which reflects the inhomogeneous air gap magnetic field vertically, and the secondary leakage reactance are derived by the quasi-two-dimensional analysis model. Then, the proposed equivalent circuit is presented, and the excitation reactance and secondary resistance are modified by the correction coefficients derived from the three analytical models. Finally, a three-dimensional (3D) finite element model is used to verify the proposed equivalent circuit model under varying air gap width and frequency, and the results are also compared with that of the traditional equivalent circuit models. The calculated thrust characteristics by the proposed equivalent circuit and 3D finite element model are experimentally validated under a constant voltage–frequency drive.

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