Modeling of peak voltage and current of nanowire resonant tunneling devices: case study on InAs/InP double-barrier heterostructures

Author(s):  
R. Ragi ◽  
Rafael V.T. da Nobrega ◽  
Murilo A. Romero
1992 ◽  
Vol 06 (13) ◽  
pp. 2321-2343 ◽  
Author(s):  
V.J. GOLDMAN ◽  
BO SU ◽  
J.E. CUNNINGHAM

We review experimental study of charge transport in nanometer double-barrier resonant tunneling devices. Heterostructure material is asymmetric: one barrier is substantially less transparent than the other. Resonant tunneling through size-quantized well states and single-electron charging of the well are thus largely separated in the two bias polarities. When the emitter barrier is more transparent than the collector barrier, electrons accumulate in the well; incremental electron occupation of the well is accompanied by Coulomb blockade leading to sharp steps of the tunneling current. When the emitter barrier is less transparent, the current reflects resonant tunneling of just one electron at a time through size-quantized well states; the current peaks and/or steps (depending on experimental parameters) appear in current-voltage characteristics. Magnetic field and temperature effects are also reviewed. Good agreement is achieved in comparison of many features of experimental data with simple theoretical models.


1992 ◽  
Vol 60 (12) ◽  
pp. 1474-1476 ◽  
Author(s):  
R. K. Hayden ◽  
L. Eaves ◽  
M. Henini ◽  
D. K. Maude ◽  
J. C. Portal ◽  
...  

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