molecular beam epitaxy system
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2020 ◽  
Vol 4 (4) ◽  
pp. 2035-2042 ◽  
Author(s):  
Byungjun Lee ◽  
Dejiu Fan ◽  
Stephen R. Forrest

A high volume linear molecular beam growth system is proposed. Costs of GaAs cells grown by this or other technologies remains ∼10× higher than silicon solar cells.


2018 ◽  
Vol 57 (8S3) ◽  
pp. 08RC10
Author(s):  
Yosuke Shimamune ◽  
Kazuo Jimbo ◽  
Genki Nishida ◽  
Masanari Murayama ◽  
Akiko Takeuchi ◽  
...  

2018 ◽  
Vol 57 (8S3) ◽  
pp. 08RC03 ◽  
Author(s):  
Genki Nishida ◽  
Masanari Murayama ◽  
Akiko Takeuchi ◽  
Yosuke Shimamune ◽  
Kazuo Jimbo ◽  
...  

2017 ◽  
Vol 638 ◽  
pp. 312-317 ◽  
Author(s):  
Yosuke Shimamune ◽  
Kazuo Jimbo ◽  
Genki Nishida ◽  
Masanari Murayama ◽  
Akiko Takeuchi ◽  
...  

2015 ◽  
Vol 425 ◽  
pp. 158-161 ◽  
Author(s):  
Yusuke Miyata ◽  
Yukinori Nose ◽  
Takeshi Yoshimura ◽  
Atsushi Ashida ◽  
Norifumi Fujimura

RSC Advances ◽  
2015 ◽  
Vol 5 (107) ◽  
pp. 87818-87830 ◽  
Author(s):  
S. S. Kushvaha ◽  
M. Senthil Kumar ◽  
A. K. Shukla ◽  
B. S. Yadav ◽  
Dilip K. Singh ◽  
...  

We have grown homoepitaxial GaN nanowall networks on GaN template using an ultra-high vacuum laser assisted molecular beam epitaxy system by ablating solid GaN target under a constant r.f. nitrogen plasma ambient.


2012 ◽  
Vol 83 (10) ◽  
pp. 105112 ◽  
Author(s):  
T. Slobodskyy ◽  
P. Schroth ◽  
D. Grigoriev ◽  
A. A. Minkevich ◽  
D. Z. Hu ◽  
...  

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