scholarly journals Issue: Selected paper of OIPE 2016 on modeling and optimal design of electromagnetic and electronic devices

Author(s):  
Antonino Laudani ◽  
Francesco Riganti Fulginei ◽  
Alessandro Salvini
2014 ◽  
Vol 981 ◽  
pp. 275-278
Author(s):  
Rui Li ◽  
Peng Li

This paper regards combinatorial techniques for electronic engineering design based on the mathematical apparatus of Non Redundant Scales theory (NRS theory).Combinatorial techniques is known to be of widespread applicability, and has been extremely effective when applied to the problem of finding the optimum ordered arrangement of structural elements in spatially or temporally distributed systems with non-uniform structure (e.g. line gages) with respect to resolving ability. These design techniques make it possible to configure electronic devices or systems with fever elements than at present, while maintaining on resolving ability and positioning precision. The NRS theory can be used to finding optimal design for wide classes of technological problems in measurement and radio electronic engineering based on combinatorial techniques.


Author(s):  
Ronald H. W. Hoppe ◽  
Peter Böhm ◽  
George Mazurkevitch ◽  
Svetozara Petrova ◽  
Gerhard Wachutka ◽  
...  

2018 ◽  
Vol 2018 ◽  
pp. 1-10
Author(s):  
Ociel Morales ◽  
Francisco Periago ◽  
José A. Vallejo

We consider the optimal design of a sequence of quantum barriers, in order to manufacture an electronic device at the nanoscale such that the dependence of its transmission coefficient on the bias voltage is linear. The technique presented here is easily adaptable to other response characteristics. There are two distinguishing features of our approach. First, the transmission coefficient is determined using a semiclassical approximation, so we can explicitly compute the gradient of the objective function. Second, in contrast with earlier treatments, manufacturing uncertainties are incorporated in the model through random variables; the optimal design problem is formulated in a probabilistic setting and then solved using a stochastic collocation method. As a measure of robustness, a weighted sum of the expectation and the variance of a least-squares performance metric is considered. Several simulations illustrate the proposed technique, which shows an improvement in accuracy over 69% with respect to brute-force, Monte-Carlo-based methods.


Author(s):  
J.A. Panitz

The first few atomic layers of a solid can form a barrier between its interior and an often hostile environment. Although adsorption at the vacuum-solid interface has been studied in great detail, little is known about adsorption at the liquid-solid interface. Adsorption at a liquid-solid interface is of intrinsic interest, and is of technological importance because it provides a way to coat a surface with monolayer or multilayer structures. A pinhole free monolayer (with a reasonable dielectric constant) could lead to the development of nanoscale capacitors with unique characteristics and lithographic resists that surpass the resolution of their conventional counterparts. Chemically selective adsorption is of particular interest because it can be used to passivate a surface from external modification or change the wear and the lubrication properties of a surface to reflect new and useful properties. Immunochemical adsorption could be used to fabricate novel molecular electronic devices or to construct small, “smart”, unobtrusive sensors with the potential to detect a wide variety of preselected species at the molecular level. These might include a particular carcinogen in the environment, a specific type of explosive, a chemical agent, a virus, or even a tumor in the human body.


Author(s):  
Byung-Teak Lee

Grown-in dislocations in GaAs have been a major obstacle in utilizing this material for the potential electronic devices. Although it has been proposed in many reports that supersaturation of point defects can generate dislocation loops in growing crystals and can be a main formation mechanism of grown-in dislocations, there are very few reports on either the observation or the structural analysis of the stoichiometry-generated loops. In this work, dislocation loops in an arsenic-rich GaAs crystal have been studied by transmission electron microscopy.The single crystal with high arsenic concentration was grown using the Horizontal Bridgman method. The arsenic source temperature during the crystal growth was about 630°C whereas 617±1°C is normally believed to be optimum one to grow a stoichiometric compound. Samples with various orientations were prepared either by chemical thinning or ion milling and examined in both a JEOL JEM 200CX and a Siemens Elmiskop 102.


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