scholarly journals The temperature state of a plane dielectric layer at constant voltage and fixed temperature of one of the surfaces of this layer

Author(s):  
Vladimir Stepanovich Zarubin ◽  
Georgy Nikolaevich Kuvyrkin ◽  
Inga Yurievna Savelyeva
Author(s):  
Vladimir Zarubin ◽  
Georgy Kuvyrkin ◽  
Inga Savelyeva

The paper formulates the nonlinear problem of steady-state heat conduction at the constant electric potential difference on the surfaces of a plane dielectric layer with the temperature-dependent heat conduction coefficient and electrical resistivity. A fixed temperature value is set on one of the layer surfaces, and the convective heat exchange with the ambient medium occurs on the opposite surface. The formulation of the problem is transformed into integral ratios, which allows the calculation of the temperature distribution over the layer thickness, governed both by the monotonic and nonmonotonic function. The quantitative assay of the temperature state of a layer of a polymer dielectric made of amorphous polycarbonate is given as an example, as well as the analysis of nonuniformity of the absolute value of electric field intensity over the thickness of this layer.


2019 ◽  
Vol 44 ◽  
pp. 100-109
Author(s):  
Georgy Nikolaevich Kuvyrkin ◽  
◽  
Inga Yurievna Savelyeva ◽  
Vladimir Stepanovich Zarubin ◽  
◽  
...  

2003 ◽  
Vol 766 ◽  
Author(s):  
Ahila Krishnamoorthy ◽  
N.Y. Huang ◽  
Shu-Yunn Chong

AbstractBlack DiamondTM. (BD) is one of the primary candidates for use in copper-low k integration. Although BD is SiO2 based, it is vastly different from oxide in terms of dielectric strength and reliability. One of the main reliability concerns is the drift of copper ions under electric field to the surrounding dielectric layer and this is evaluated by voltage ramp (V-ramp) and time dependent dielectric breakdown (TDDB). Metal 1 and Metal 2 intralevel comb structures with different metal widths and spaces were chosen for dielectric breakdown studies. Breakdown field of individual test structures were obtained from V-ramp tests in the temperature range of 30 to 150°C. TDDB was performed in the field range 0.5 – 2 MV/cm. From the leakage between combs at the same level (either metal 1 or metal 2) Cu drift through SiC/BD or SiN/BD interface was characterized. It was found that Cu/barrier and barrier/low k interfaces functioned as easy paths for copper drift thereby shorting the lines. Cu/SiC was found to provide a better interface than Cu/SiN.


2020 ◽  
Vol 15 (3) ◽  
pp. 235
Author(s):  
Eka Prasetyono ◽  
Luthfansyah Mohammad ◽  
Farid Dwi Murdianto

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