CMOS direct injection-locked frequency divider (3.55 mW 80 GHz) with 26.3% locking range using distributed LC tank and body bias techniques

2011 ◽  
Vol 53 (11) ◽  
pp. 2694-2697 ◽  
Author(s):  
Chien-Chin Wang ◽  
Chang-Zhi Chen ◽  
Yo-Sheng Lin
2008 ◽  
Vol 18 (8) ◽  
pp. 560-562 ◽  
Author(s):  
S.-L. Jang ◽  
S.-H. Huang ◽  
C.-F. Lee ◽  
M.-H. Juang

2008 ◽  
Vol 50 (3) ◽  
pp. 806-809
Author(s):  
Sheng-Lyang Jang ◽  
Fei-Hung Chen ◽  
Chien-Feng Lee ◽  
M.-H. Juang

2014 ◽  
Vol 13 (02) ◽  
pp. 1450009
Author(s):  
Sheng-Lyang Jang ◽  
Tsung-Chao Fu

The effect of ac hot-carrier stress on the performance of a wide locking range divide-by-4 injection-locked frequency divider (ILFD) is investigated. The ILFD was implemented in the TSMC 0.18 μm 1P6M CMOS process. The ILFD uses direct injection MOSFETs for coupling external signal to the resonators. Radio frequency (RF) circuit parameters such as oscillation frequency, tuning range, phase noise, and locking range before and after RF stress at an elevated supply voltage for 5 h have been examined by experiment. The measured locking range, operation range and phase noise after RF stress shows significant degradation from the fresh circuit condition.


2013 ◽  
Vol 1 (2) ◽  
pp. 62-68
Author(s):  
Sheng-Lyang Jang ◽  
Jhin-Fang Huang ◽  
Chong-Wei Huang ◽  
Ching-Wen Hsue ◽  
Chia-Wei Chang

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