W-band CMOS direct injection-locked frequency divider with 23.5-GHz locking range using distributed LC network and power matching and body bias techniques

2019 ◽  
Vol 99 (3) ◽  
pp. 707-721
Author(s):  
Yo-Sheng Lin ◽  
Kai-Siang Lan ◽  
Hsin-Chen Lin
Keyword(s):  
Direct Injection ◽  
Frequency Divider ◽  
Power Matching ◽  
Locking Range ◽  
W Band ◽  
Body Bias

Effects of Hot-Carrier Stress on the RF Performance of a 0.18-μm MOS Divide-by-4 LC Injection-Locked Frequency Divider

2014 ◽  
Vol 13 (02) ◽  
pp. 1450009
Author(s):  
Sheng-Lyang Jang ◽  
Tsung-Chao Fu
Keyword(s):  
Phase Noise ◽  
Frequency Tuning ◽  
Supply Voltage ◽  
Direct Injection ◽  
Frequency Divider ◽  
External Signal ◽  
Cmos Process ◽  
Hot Carrier ◽  
Locking Range ◽  
Hot Carrier Stress

The effect of ac hot-carrier stress on the performance of a wide locking range divide-by-4 injection-locked frequency divider (ILFD) is investigated. The ILFD was implemented in the TSMC 0.18 μm 1P6M CMOS process. The ILFD uses direct injection MOSFETs for coupling external signal to the resonators. Radio frequency (RF) circuit parameters such as oscillation frequency, tuning range, phase noise, and locking range before and after RF stress at an elevated supply voltage for 5 h have been examined by experiment. The measured locking range, operation range and phase noise after RF stress shows significant degradation from the fresh circuit condition.

A V-Band CMOS Direct Injection-Locked Frequency Divider Using Forward Body Bias Technology

2010 ◽  
Vol 20 (7) ◽  
pp. 396-398 ◽  
Author(s):  
Y.-T. Chen ◽  
M.-W. Li ◽  
T.-H. Huang ◽  
Huey-Ru Chuang
Keyword(s):  
Direct Injection ◽  
Frequency Divider ◽  
V Band ◽  
Forward Body Bias ◽  
Body Bias
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