A 53.6 GHz direct injection-locked frequency divider with a 72% locking range in 65 nm CMOS technology

2013 ◽  
Author(s):  
Wen-Lin Chen ◽  
Yu-Shao Jerry Shiao ◽  
Hsuan-Der Yen ◽  
Guo-Wei Huang ◽  
Hsieh-Hung Hsieh ◽  
...  
Keyword(s):  
Direct Injection ◽  
Cmos Technology ◽  
Frequency Divider ◽  
Locking Range

scholarly journals An 18.8–33.9 GHz, 2.26 mW Current-Reuse Injection-Locked Frequency Divider for Radar Sensor Applications

Sensors ◽  
2021 ◽  
Vol 21 (7) ◽  
pp. 2551
Author(s):  
Kwang-Il Oh ◽  
Goo-Han Ko ◽  
Jeong-Geun Kim ◽  
Donghyun Baek
Keyword(s):  
Supply Voltage ◽  
Cmos Technology ◽  
Frequency Divider ◽  
Oxide Semiconductor ◽  
Center Frequency ◽  
Radar Sensor ◽  
Frequency Locking ◽  
Current Reuse ◽  
Sensor Applications ◽  
Locking Range

An 18.8–33.9 GHz, 2.26 mW current-reuse (CR) injection-locked frequency divider (ILFD) for radar sensor applications is presented in this paper. A fourth-order resonator is designed using a transformer with a distributed inductor for wideband operating of the ILFD. The CR core is employed to reduce the power consumption compared to conventional cross-coupled pair ILFDs. The targeted input center frequency is 24 GHz for radar application. The self-oscillated frequency of the proposed CR-ILFD is 14.08 GHz. The input frequency locking range is from 18.8 to 33.8 GHz (57%) at an injection power of 0 dBm without a capacitor bank or varactors. The proposed CR-ILFD consumes 2.26 mW of power from a 1 V supply voltage. The entire die size is 0.75 mm × 0.45 mm. This CR-ILFD is implemented in a 65 nm complementary metal-oxide semiconductor (CMOS) technology.

Effects of Hot-Carrier Stress on the RF Performance of a 0.18-μm MOS Divide-by-4 LC Injection-Locked Frequency Divider

2014 ◽  
Vol 13 (02) ◽  
pp. 1450009
Author(s):  
Sheng-Lyang Jang ◽  
Tsung-Chao Fu
Keyword(s):  
Phase Noise ◽  
Frequency Tuning ◽  
Supply Voltage ◽  
Direct Injection ◽  
Frequency Divider ◽  
External Signal ◽  
Cmos Process ◽  
Hot Carrier ◽  
Locking Range ◽  
Hot Carrier Stress

The effect of ac hot-carrier stress on the performance of a wide locking range divide-by-4 injection-locked frequency divider (ILFD) is investigated. The ILFD was implemented in the TSMC 0.18 μm 1P6M CMOS process. The ILFD uses direct injection MOSFETs for coupling external signal to the resonators. Radio frequency (RF) circuit parameters such as oscillation frequency, tuning range, phase noise, and locking range before and after RF stress at an elevated supply voltage for 5 h have been examined by experiment. The measured locking range, operation range and phase noise after RF stress shows significant degradation from the fresh circuit condition.

scholarly journals An 18.8–33.9-GHz, 2.26-mW Current-Reuse Injection-Locked Frequency Divider for Radar Sensor Applications

2021 ◽  
Author(s):  
Kwang-Il Oh ◽  
Goo-Han Ko ◽  
Jeong-Geun Kim ◽  
Donghyun Baek
Keyword(s):  
Supply Voltage ◽  
Cmos Technology ◽  
Frequency Divider ◽  
Center Frequency ◽  
Radar Sensor ◽  
Frequency Locking ◽  
Current Reuse ◽  
Sensor Applications ◽  
Locking Range ◽  
Injection Power

An 18.8–33.9-GHz, 2.26-mW current-reuse (CR) injection-locked frequency divider (ILFD) for radar sensor applications is presented in this paper. A fourth-order resonator is designed using a transformer with a distributed inductor for wideband operating of the ILFD. The CR core is employed to reduce the power consumption compared to conventional cross-coupled pair ILFDs. The targeted input center frequency is 24 GHz for radar application. The self-oscillated frequency of the proposed CR-ILFD is 14.08 GHz. The input frequency locking range is from 18.8 to 33.8 GHz (57%) at an injection power of 0 dBm without a capacitor bank or varactors. The proposed CR-ILFD consumes 2.26 mW of power from a 1-V supply voltage. The entire die size is 0.75 mm ´ 0.45 mm. This CR-ILFD is implemented in a 65-nm CMOS technology.

Sign in / Sign up

Export Citation Format

Share Document