Non‐reflecting tapered slotline antenna with linear phase responses of both reflection and transmission for short‐pulse applications

2021 ◽  
Author(s):  
Hongtai Chen ◽  
Haitao Yang ◽  
Haoyan Ma ◽  
Yue Su ◽  
Hongxin Zhao ◽  
...  
Keyword(s):  
Short Pulse ◽  
Linear Phase ◽  
Reflection And Transmission

Parabolas from Reconstructed Surfaces Observed in Convergent-Beam RHEED Patterns

1990 ◽  
Vol 48 (2) ◽  
pp. 398-399
Author(s):  
M. Gajdardziska-Josifovska
Keyword(s):  
Electron Microscopy ◽  
High Energy ◽  
Two Dimensional ◽  
High Energy Electron ◽  
Reflection And Transmission ◽  
Experimental Diffraction Pattern ◽  
Surface Resonance ◽  
Reconstructed Surfaces ◽  
Reflection Electron Microscopy ◽  
Convergent Beam

Parabolas have been observed in the reflection high-energy electron diffraction (RHEED) patterns from surfaces of single crystals since the early thirties. In the last decade there has been a revival of attempts to elucidate the origin of these surface parabolas. The renewed interest stems from the need to understand the connection between the parabolas and the surface resonance (channeling) condition, the latter being routinely used to obtain higher intensity in reflection electron microscopy (REM) images of surfaces. Several rather diverging descriptions have been proposed to explain the parabolas in the reflection and transmission Kikuchi patterns. Recently we have developed an unifying general treatment in which the parabolas are shown to be K-lines of two-dimensional lattices. Here we want to review the main features of this description and present an experimental diffraction pattern from a 30° MgO (111) surface which displays parabolas that can be attributed to the surface reconstruction.

Multiphoton ionization by a very short pulse

2017 ◽  
Vol 187 (11) ◽  
pp. 1280-1287 ◽  
Author(s):  
Leonid V. Keldysh
Keyword(s):  
Short Pulse ◽  
Multiphoton Ionization

Compact Energy Measuring System for Short Pulse Lasers

2013 ◽  
Vol 20 (2) ◽  
pp. 183-190 ◽  
Author(s):  
A. Barna ◽  
I. B. Földes ◽  
Z. Gingl ◽  
R. Mingesz
Keyword(s):  
Short Pulse ◽  
Electronic Devices ◽  
Laser Pulses ◽  
Measuring System ◽  
Electric Response ◽  
Usb Interface ◽  
Radiated Noise ◽  
Fiber Optical ◽  
Measurement Control ◽  
Short Pulse Lasers

Abstract In experiments with short-pulse lasers the measurement control of the energy of the laser pulse is of crucial importance. Generally it is difficult to measure the amplitude of the pulses of short-pulse lasers using electronic devices, their response time being longer than the duration of the laser pulses. The electric response of the detector is still too fast to be directly digitized therefore a peak-hold unit can be used to allow data processing for the computer. In this paper we present a device which measures the energy of UV short (fs) pulses shot-byshot, digitizes and sends the data to the PC across an USB interface. The circuit is based on an analog peak detect and hold unit and the use of fiber optical coupling between the PC and the device provides a significant improvement to eliminate potential ground loops and to reduce conductive and radiated noise as well. The full development is open source and has been made available to download from our web page (http://www.noise.inf.u-szeged.hu/Instruments/PeakHold/).

Silicon Thinning using Ultra-Short Pulse Laser Ablation

2004 ◽  
Author(s):  
F. Beaudoin ◽  
P. Perdu ◽  
C. DeNardi ◽  
R. Desplats ◽  
J. Lopez ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Sample Preparation ◽  
Pulse Laser ◽  
Pulse Laser Ablation ◽  
Short Pulse ◽  
Special Care ◽  
Short Pulse Laser ◽  
Ultra Short Pulse ◽  
Ultra Short Pulse Laser

Abstract Ultra-short pulse laser ablation is applied to IC backside sample preparation. It is contact-less, non-thermal, precise and can ablate the various types of material present in IC packages. This study concerns the optimization of ultra-short pulse laser ablation for silicon thinning. Uncontrolled silicon roughness and poor uniformity of the laser thinned cavity needed to be tackled. Special care is taken to minimize the silicon RMS roughness to less than 1µm. Application to sample preparation of 256Mbit devices is presented.

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