A high order accurate numerical method for solving two-dimensional dual-phase-lagging equation with temperature jump boundary condition in nanoheat conduction

2015 ◽  
Vol 31 (6) ◽  
pp. 1742-1768 ◽  
Author(s):  
Hong Sun ◽  
Rui Du ◽  
Weizhong Dai ◽  
Zhi-zhong Sun
Keyword(s):  
Boundary Condition ◽  
Numerical Method ◽  
Temperature Jump ◽  
High Order ◽  
Dual Phase ◽  
Two Dimensional

scholarly journals A High-Order Compact 2D FDFD Method for Waveguides

2012 ◽  
Vol 2012 ◽  
pp. 1-6
Author(s):  
Gang Zheng ◽  
Bing-Zhong Wang
Keyword(s):  
Boundary Condition ◽  
Finite Difference ◽  
Surface Impedance ◽  
Transverse Field ◽  
High Order ◽  
Impedance Boundary Condition ◽  
Two Dimensional ◽  
Dispersion Characteristics ◽  
Impedance Boundary ◽  
Numerical Examples

A high-order compact two-dimensional finite-difference frequency-domain (2D FDFD) method is proposed for the analysis of the dispersion characteristics of waveguides. A surface impedance boundary condition (SIBC) for the high-order compact 2D FDFD method is also given to model lossy metal waveguides. Four transverse field components are involved in the final eigenequation. Numerical examples are given, which show that this high-order compact 2D FDFD method is more efficient than the low-order compact 2D FDFD method and has a less storage cost.

Effect of Temperature Jump on Nonequilibrium Entropy Generation in a MOSFET Transistor Using Dual-Phase-Lagging Model

2017 ◽  
Vol 139 (12) ◽  
Author(s):  
Fraj Echouchene ◽  
Hafedh Belmabrouk
Keyword(s):  
Boundary Condition ◽  
Entropy Production ◽  
Entropy Generation ◽  
Temperature Jump ◽  
Oxide Semiconductor ◽  
Effect Of Temperature ◽  
Dual Phase ◽  
Conduction Model ◽  
Nonequilibrium Entropy ◽  
Effect Transistor

This paper investigates the effect of temperature-jump boundary condition on nonequilibrium entropy production under the effect of the dual-phase-lagging (DPL) heat conduction model in a two-dimensional sub-100 nm metal-oxide-semiconductor field effect transistor (MOSFET). The transient DPL model is solved using finite element method. Also, the influences of the governing parameters on global entropy generation for the following cases—(I) constant applied temperature, (II) temperature-jump boundary condition, and (III) a realistic MOSFET with volumetric heat source and adiabatic boundaries—are discussed in detail and depicted graphically. The analysis of our results indicates that entropy generation minimization within a MOSFET can be achieved by using temperature-jump boundary condition and for low values of Knudsen number. A significant reduction of the order of 85% of total entropy production is observed when a temperature-jump boundary condition is adopted.

scholarly journals High-order numerical method for two-dimensional Riesz space fractional advection-dispersion equation

2017 ◽  
Vol 22 (11) ◽  
pp. 0-0
Author(s):  
Abdollah Borhanifar ◽  
◽  
Maria Alessandra Ragusa ◽  
Sohrab Valizadeh ◽  
◽  
...  
Keyword(s):  
Numerical Method ◽  
Dispersion Equation ◽  
High Order ◽  
Riesz Space ◽  
Two Dimensional ◽  
Advection Dispersion

Explicit Kutta condition for unsteady two-dimensional high-order potential boundary element method

AIAA Journal ◽  
1997 ◽  
Vol 35 ◽  
pp. 1080-1081
Author(s):  
Giuseppe Davi ◽  
Rosario M. A. Maretta ◽  
Alberto Milazzo
Keyword(s):  
Boundary Element Method ◽  
Boundary Element ◽  
High Order ◽  
Two Dimensional ◽  
Kutta Condition ◽  
Element Method
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