Capping vertically aligned InGaAs/GaAs(Sb) quantum dots with a AlGaAsSb spacer layer in intermediate-band solar cell devices

Progress in Photovoltaics Research and Applications ◽

10.1002/pip.2815 ◽

2016 ◽

Vol 25 (1) ◽

pp. 76-86 ◽

Author(s):

Wei-Sheng Liu ◽

Hsiao-Chien Lin ◽

Ren-Yo Liu

Keyword(s):

Quantum Dots ◽

Intermediate Band ◽

Intermediate Band Solar Cell ◽

Spacer Layer ◽

Vertically Aligned

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Theoretical analysis of GaAs/AlGaAs quantum dots in quantum wire array for intermediate band solar cell

Journal of Renewable and Sustainable Energy ◽

10.1063/1.4828359 ◽

2014 ◽

Vol 6 (1) ◽

pp. 011206 ◽

Author(s):

Tomah Sogabe ◽

Toshiyuki Kaizu ◽

Yoshitaka Okada ◽

Stanko Tomić

Keyword(s):

Quantum Dots ◽

Theoretical Analysis ◽

Quantum Wire ◽

Intermediate Band ◽

Intermediate Band Solar Cell

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InGaAs/GaAsSb type-II quantum dots for intermediate band solar cell

2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2 ◽

10.1109/pvsc-vol2.2012.6656699 ◽

2012 ◽

Author(s):

Yasushi Shoji ◽

Katsuhrio Akimoto ◽

Yoshitaka Okada

Keyword(s):

Quantum Dots ◽

Type Ii ◽

Intermediate Band ◽

Intermediate Band Solar Cell

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Optical absorption coefficient calculations of GaSb/GaAs quantum dots for intermediate band solar cell applications

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/abba5f ◽

2020 ◽

Vol 54 (4) ◽

pp. 045103

Author(s):

Maetee Kunrugsa

Keyword(s):

Quantum Dots ◽

Optical Absorption ◽

Absorption Coefficient ◽

Optical Absorption Coefficient ◽

Intermediate Band ◽

Intermediate Band Solar Cell

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Feasibility of submonolayer ZnTe/ZnCdSe quantum dots as intermediate band solar cell material system

Solar Energy Materials and Solar Cells ◽

10.1016/j.solmat.2013.07.037 ◽

2013 ◽

Vol 117 ◽

pp. 604-609 ◽

Author(s):

S. Dhomkar ◽

U. Manna ◽

L. Peng ◽

R. Moug ◽

I.C. Noyan ◽

...

Keyword(s):

Quantum Dots ◽

Material System ◽

Intermediate Band ◽

Intermediate Band Solar Cell ◽

Cell Material ◽

Solar Cell Material

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Multi-stacked InAs/GaNAs quantum dots with direct Si doping for use in intermediate band solar cell

2010 35th IEEE Photovoltaic Specialists Conference ◽

10.1109/pvsc.2010.5615944 ◽

2010 ◽

Author(s):

Takayuki Morioka ◽

Ryuji Oshima ◽

Ayami Takata ◽

Yasushi Shoji ◽

Tomoya Inoue ◽

...

Keyword(s):

Quantum Dots ◽

Intermediate Band ◽

Intermediate Band Solar Cell ◽

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In-plane coupling effect in InAs/GaAs quantum dots arrays for intermediate band solar cell

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) ◽

10.1109/pvsc.2013.6744161 ◽

2013 ◽

Author(s):

Stanko Tomic ◽

Tomah Sogabe ◽

Yoshitaka Okada

Keyword(s):

Quantum Dots ◽

Coupling Effect ◽

Intermediate Band ◽

Intermediate Band Solar Cell

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Advanced material system for the design of an intermediate band solar cell: Type-II CdTe quantum dots in a ZnCdSe matrix

Journal of Applied Physics ◽

10.1063/1.5126224 ◽

2019 ◽

Vol 126 (23) ◽

pp. 235302

Author(s):

V. Deligiannakis ◽

G. Ranepura ◽

I. L. Kuskovsky ◽

M. C. Tamargo

Keyword(s):

Quantum Dots ◽

Cdte Quantum Dots ◽

Material System ◽

Type Ii ◽

Cell Type ◽

Intermediate Band ◽

Advanced Material ◽

Intermediate Band Solar Cell

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Intermediate band solar cell design using InAs quantum dots in AlAsSb cladding

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) ◽

10.1109/pvsc.2015.7355971 ◽

2015 ◽

Author(s):

Seth M. Hubbard ◽

Staffan Hellstroem ◽

Zachary S. Bittner ◽

Ramesh B. Laghumavarapu ◽

Diana Huffaker

Keyword(s):

Quantum Dots ◽

Cell Design ◽

Inas Quantum Dots ◽

Intermediate Band ◽

Intermediate Band Solar Cell

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Energy band structure tailoring of vertically aligned InAs/GaAsSb quantum dot structure for intermediate-band solar cell application by thermal annealing process

Optics Express ◽

10.1364/oe.22.030963 ◽

2014 ◽

Vol 22 (25) ◽

pp. 30963 ◽

Author(s):

Wei-Sheng Liu ◽

Ting-Fu Chu ◽

Tien-Hao Huang

Keyword(s):

Band Structure ◽

Energy Band ◽

Annealing Process ◽

Energy Band Structure ◽

Solar Cell Application ◽

Intermediate Band ◽

Intermediate Band Solar Cell ◽

Thermal Annealing Process ◽

Vertically Aligned

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Fabrication of 100 layer-stacked InAs/GaNAs strain-compensated quantum dots on GaAs (001) for application to intermediate band solar cell

2010 35th IEEE Photovoltaic Specialists Conference ◽

10.1109/pvsc.2010.5616186 ◽

2010 ◽

Author(s):

Ayami Takata ◽

Ryuji Oshima ◽

Yasushi Shoji ◽

Kouichi Akahane ◽

Yoshitaka Okada

Keyword(s):

Quantum Dots ◽

Intermediate Band ◽

Intermediate Band Solar Cell

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