Impact of bilayer structures on the surface passivation quality of high‐rate‐sputtered hydrogenated amorphous silicon for silicon heterojunction solar cells

2020 ◽  
Vol 28 (9) ◽  
pp. 971-976
Author(s):  
Faris Akira Bin Mohd Zulkifly ◽  
Yuta Shiratori ◽  
Kazuyoshi Nakada ◽  
Shinsuke Miyajima
2011 ◽  
Vol 1321 ◽  
Author(s):  
A. R. Middya ◽  
Eric A. Schiff

ABSTRACTIn this work, we report on investigation of p-type semiconducting polymer, {poly(3,4 polyethylenedioxythiophene)-poly(styrenesulfonate)} (PEDOT:PSS) as the p-layer in NIP and PIN hydrogenated amorphous silicon (a-Si:H) solar cells. The rectification ratio of solution-casted diode is ∼ 10, it increases to 3×104 when PEDOT:PSS is deposited by Spin Coating technique. We observed additional photovoltaic effect when light is illuminated through polymer side. So far, best solar cells characteristics observed for PEDOT:PSS/a-Si:H hybrid solar cells are Voc ≈ 720 mV and Jsc ≈ 1 - 2 mA/cm2.


2014 ◽  
Vol 4 (6) ◽  
pp. 1326-1330 ◽  
Author(s):  
Dong Zhang ◽  
Dimitrios Deligiannis ◽  
Georgios Papakonstantinou ◽  
Rene A. C. M. M. van Swaaij ◽  
Miro Zeman

2017 ◽  
Vol 121 (8) ◽  
pp. 085306 ◽  
Author(s):  
Dimitrios Deligiannis ◽  
Jeroen van Vliet ◽  
Ravi Vasudevan ◽  
René A. C. M. M. van Swaaij ◽  
Miro Zeman

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