Impact of bilayer structures on the surface passivation quality of high‐rate‐sputtered hydrogenated amorphous silicon for silicon heterojunction solar cells

2020 ◽  
Vol 28 (9) ◽  
pp. 971-976
Author(s):  
Faris Akira Bin Mohd Zulkifly ◽  
Yuta Shiratori ◽  
Kazuyoshi Nakada ◽  
Shinsuke Miyajima
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Surface Passivation ◽  
Hydrogenated Amorphous Silicon ◽  
High Rate ◽  
Heterojunction Solar Cells ◽  
Hydrogenated Amorphous ◽  
Silicon Heterojunction Solar Cells

Semiconducting Polymer and Hydrogenated Amorphous Silicon Heterojunction Solar Cells

2011 ◽  
Vol 1321 ◽  
Author(s):  
A. R. Middya ◽  
Eric A. Schiff
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Photovoltaic Effect ◽  
Hydrogenated Amorphous Silicon ◽  
Hybrid Solar Cells ◽  
Semiconducting Polymer ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Hydrogenated Amorphous ◽  
Silicon Heterojunction Solar Cells

ABSTRACTIn this work, we report on investigation of p-type semiconducting polymer, {poly(3,4 polyethylenedioxythiophene)-poly(styrenesulfonate)} (PEDOT:PSS) as the p-layer in NIP and PIN hydrogenated amorphous silicon (a-Si:H) solar cells. The rectification ratio of solution-casted diode is ∼ 10, it increases to 3×104 when PEDOT:PSS is deposited by Spin Coating technique. We observed additional photovoltaic effect when light is illuminated through polymer side. So far, best solar cells characteristics observed for PEDOT:PSS/a-Si:H hybrid solar cells are Voc ≈ 720 mV and Jsc ≈ 1 - 2 mA/cm2.

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