On the possible role of the interfacial inversion layer in the improvement of the performance of hydrogenated amorphous silicon/crystalline silicon heterojunction solar cells [HIT]

2015 ◽  
Vol 132 ◽  
pp. 320-328 ◽  
Author(s):  
Moustafa Ghannam ◽  
Ghadah Shehadah ◽  
Yaser Abdulraheem ◽  
Jef Poortmans
2011 ◽  
Vol 1321 ◽  
Author(s):  
A. R. Middya ◽  
Eric A. Schiff

ABSTRACTIn this work, we report on investigation of p-type semiconducting polymer, {poly(3,4 polyethylenedioxythiophene)-poly(styrenesulfonate)} (PEDOT:PSS) as the p-layer in NIP and PIN hydrogenated amorphous silicon (a-Si:H) solar cells. The rectification ratio of solution-casted diode is ∼ 10, it increases to 3×104 when PEDOT:PSS is deposited by Spin Coating technique. We observed additional photovoltaic effect when light is illuminated through polymer side. So far, best solar cells characteristics observed for PEDOT:PSS/a-Si:H hybrid solar cells are Voc ≈ 720 mV and Jsc ≈ 1 - 2 mA/cm2.


2013 ◽  
Vol 114 (7) ◽  
pp. 074504 ◽  
Author(s):  
Miha Filipič ◽  
Zachary C. Holman ◽  
Franc Smole ◽  
Stefaan De Wolf ◽  
Christophe Ballif ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document