Reduction of Optical Loss in Hydrogenated Amorphous Silicon/Crystalline Silicon Heterojunction Solar Cells by High-Mobility Hydrogen-Doped In2O3Transparent Conductive Oxide

2008 ◽  
Vol 1 ◽  
pp. 041501 ◽  
Author(s):  
Takashi Koida ◽  
Hiroyuki Fujiwara ◽  
Michio Kondo
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
High Mobility ◽  
Optical Loss ◽  
Heterojunction Solar Cells ◽  
Conductive Oxide ◽  
Hydrogenated Amorphous ◽  
Silicon Heterojunction Solar Cells

Semiconducting Polymer and Hydrogenated Amorphous Silicon Heterojunction Solar Cells

2011 ◽  
Vol 1321 ◽  
Author(s):  
A. R. Middya ◽  
Eric A. Schiff
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Photovoltaic Effect ◽  
Hydrogenated Amorphous Silicon ◽  
Hybrid Solar Cells ◽  
Semiconducting Polymer ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Hydrogenated Amorphous ◽  
Silicon Heterojunction Solar Cells

ABSTRACTIn this work, we report on investigation of p-type semiconducting polymer, {poly(3,4 polyethylenedioxythiophene)-poly(styrenesulfonate)} (PEDOT:PSS) as the p-layer in NIP and PIN hydrogenated amorphous silicon (a-Si:H) solar cells. The rectification ratio of solution-casted diode is ∼ 10, it increases to 3×104 when PEDOT:PSS is deposited by Spin Coating technique. We observed additional photovoltaic effect when light is illuminated through polymer side. So far, best solar cells characteristics observed for PEDOT:PSS/a-Si:H hybrid solar cells are Voc ≈ 720 mV and Jsc ≈ 1 - 2 mA/cm2.

Optical Enhancement of Silicon Heterojunction Solar Cells With Hydrogenated Amorphous Silicon Carbide Emitter

2014 ◽  
Vol 4 (6) ◽  
pp. 1326-1330 ◽  
Author(s):  
Dong Zhang ◽  
Dimitrios Deligiannis ◽  
Georgios Papakonstantinou ◽  
Rene A. C. M. M. van Swaaij ◽  
Miro Zeman
Keyword(s):  
Silicon Carbide ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Silicon Carbide ◽  
Heterojunction Solar Cells ◽  
Hydrogenated Amorphous ◽  
Silicon Heterojunction Solar Cells

Passivation mechanism in silicon heterojunction solar cells with intrinsic hydrogenated amorphous silicon oxide layers

2017 ◽  
Vol 121 (8) ◽  
pp. 085306 ◽  
Author(s):  
Dimitrios Deligiannis ◽  
Jeroen van Vliet ◽  
Ravi Vasudevan ◽  
René A. C. M. M. van Swaaij ◽  
Miro Zeman
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Silicon Oxide ◽  
Hydrogenated Amorphous Silicon ◽  
Oxide Layers ◽  
Heterojunction Solar Cells ◽  
Amorphous Silicon Oxide ◽  
Hydrogenated Amorphous ◽  
Silicon Heterojunction Solar Cells

p-type nc-SiOx:H emitter layer for silicon heterojunction solar cells grown by rf-PECVD

2015 ◽  
Vol 1770 ◽  
pp. 7-12 ◽  
Author(s):  
Henriette A. Gatz ◽  
Yinghuan Kuang ◽  
Marcel A. Verheijen ◽  
Jatin K. Rath ◽  
Wilhelmus M.M. (Erwin) Kessels ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Material Properties ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
Nanocrystalline Silicon ◽  
Emitter Layer ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Silicon Heterojunction Solar Cells

ABSTRACTSilicon heterojunction solar cells (SHJ) with thin intrinsic layers are well known for their high efficiencies. A promising way to further enhance their excellent characteristics is to enable more light to enter the crystalline silicon (c-Si) absorber of the cell while maintaining a simple cell configuration. Our approach is to replace the amorphous silicon (a-Si:H) emitter layer with a more transparent nanocrystalline silicon oxide (nc-SiOx:H) layer. In this work, we focus on optimizing the p-type nc-SiOx:H material properties, grown by radio frequency plasma enhanced chemical vapor deposition (rf PECVD), on an amorphous silicon layer.20 nm thick nanocrystalline layers were successfully grown on a 5 nm a-Si:H layer. The effect of different ratios of trimethylboron to silane gas flow rates on the material properties were investigated, yielding an optimized material with a conductivity in the lateral direction of 7.9×10-4 S/cm combined with a band gap of E04 = 2.33 eV. Despite its larger thickness as compared to a conventional window a-Si:H p-layer, the novel layer stack of a-Si:H(i)/nc-SiOx:H(p) shows significantly enhanced transmission compared to the stack with a conventional a-Si:H(p) emitter. Altogether, the chosen material exhibits promising characteristics for implementation in SHJ solar cells.

Sign in / Sign up

Export Citation Format

Share Document