Method for the Determination of the Critical Diameter of High Velocity Detonation by conical geometry

1992 ◽  
Vol 17 (2) ◽  
pp. 77-81 ◽  
Author(s):  
Hartmut Badners ◽  
Carl-Otto Leiber

1966 ◽  
Vol 25 ◽  
pp. 93-97
Author(s):  
Richard Woolley

It is now possible to determine proper motions of high-velocity objects in such a way as to obtain with some accuracy the velocity vector relevant to the Sun. If a potential field of the Galaxy is assumed, one can compute an actual orbit. A determination of the velocity of the globular clusterωCentauri has recently been completed at Greenwich, and it is found that the orbit is strongly retrograde in the Galaxy. Similar calculations may be made, though with less certainty, in the case of RR Lyrae variable stars.



2005 ◽  
Vol 498-499 ◽  
pp. 129-133 ◽  
Author(s):  
Marcos Flavio de Campos ◽  
Fernando José Gomes Landgraf

SmCo5 magnets are usually produced by powder metallurgy route, including milling, compaction and orientation under magnetic field, sintering and heat treatment. The samples produced by powder metallurgy, with grain size around 10 μm, are ideal for determination of intrinsic parameters. The first step for determination of intrinsic magnetic parameters is obtaining images of domain structure in demagnetized samples. In the present study, the domain images were produced by means of Kerr effect, in a optical microscope. After the test of several etchings, Nital appears as the most appropriate for observation of magnetic domains by Kerr effect. Applying Stereology and Domain Theory, several intrinsic parameters of SmCo5 phase were determined: domain wall energy 120 erg/cm2, critical diameter for single domain particle size 2 μm and domain wall thickness 60 Å. In the case of SmCo5, and also other phases with high magnetocrystalline anisotropy, Domain Theory presents several advantages when compared with Micromagnetics.



2006 ◽  
Vol 25 (1) ◽  
pp. 114-123 ◽  
Author(s):  
Bruska Azhdar ◽  
Bengt Stenberg ◽  
Leif Kari


1971 ◽  
Vol 42 ◽  
pp. 46-60 ◽  
Author(s):  
J. L. Greenstein

Determination of temperature and surface gravity by colors and hydrogen-line profiles have been carried out for hot halo stars. A narrow horizontal branch is found stretching to above 40000 K; the hot O subdwarfs show a nearly vertical sequence, dropping towards the hot white dwarfs.Spectra for 285 white dwarf stars have been obtained, and the classification scheme is reviewed. Theoretical problems of these spectra remain, largely, unsolved.The red subluminous stars found by Eggen were studied spectroscopically; among 68 stars only one new red degenerate star was found. The others are very metal-poor, high-velocity stars with large ultraviolet excess.



1991 ◽  
Vol 126 ◽  
pp. 29-32
Author(s):  
Bruce T. Tsurutani ◽  
James E. Randolph

AbstractThe NASA Solar Probe mission will be one of the most exciting dust missions ever flown and will lead to a revolutionary advance in our understanding of dust within our solar system. Solar Probe will map the dust environment from the orbit of Jupiter (5 AU), to within 4 solar radii of the sun’s center. The region between 0.3 AU and 4 Rshas never been visited before, so the 10 days that the spacecraft spends during each (of the two) orbit is purely exploratory in nature. Solar Probe will also reach heliographic latitudes as high as ~ 15 to 28 above (below) the ecliptic on its trajectory inbound (outbound) to (from) the sun. This, in addition to the ESA/NASA Ulysses mission, will help determine the out-of-the-ecliptic dust environment. A post-perihelion burn will reduce the satellite orbital period to 2.5 years about the sun. A possible extended mission would allow data reception for 2 more revolutions, mapping out a complete solar cycle. Because the near-solar dust environment is not well understood (or is controversial at best), and it is very important to have better knowledge of the dust environment to protect Solar Probe from high velocity dust hits, we urgently request the scientific community to obtain further measurements of the near-solar dust properties. One prime opportunity is the July 1991 solar eclipse.



2008 ◽  
Author(s):  
Luís A. Villamar ◽  
E. Suaste ◽  
Gerardo Herrera Corral ◽  
Luis Manuel Montaño Zentina
Keyword(s):  


1978 ◽  
Vol 14 (6) ◽  
pp. 710-713 ◽  
Author(s):  
V. F. Zakaznov ◽  
L. A. Kursheva ◽  
Z. I. Fedina


2014 ◽  
Vol 2014 (1) ◽  
pp. 000630-000634 ◽  
Author(s):  
Gilles Fresquet ◽  
Jean-Philippe Piel

Advanced packaging technologies are rapidly evolving and 3D architectures requires new inspection and metrology techniques. Existing techniques need to be improved but new techniques must be developed to address new challenges induced by the last fabrication processes. To increase the development speed, it is a big advantage that metrology and defect inspection need to be present on the same platform and a flexible tool, with multi sensors, to be more versatile facing the different step of the process will be presented in this paper As 3D IC devices utilize TSVs for direct interconnect, the depth, top and bottom CD (critical diameter) of such TSVs with a diameter as small as 5 μm with a high aspect ratio is characterized. During wafer temporary bounding, which is an handling technique that allows wafer thinning with a thickness of less than 100 μm, by selecting the most sensitive sensor, determination of the thickness of each layer of the stack could be determined at the same time: silicon substrate, thin glue layer of few microns only and carrier which could be silicon or glass. After back-side processing and wafer thinning, the determination of the remaining silicon thickness (RST) below the TSV could be determined. Moreover back side roughness after grinding is also determined. After wafer thinning process, the TSVs are revealed at the back side of the wafer, leaving to appear copper pillars. The pillars height and co-planarity measurements are then addressed. Post CMP process control will be addressed by full field interferometry especially prior Copper to Copper direct bonding. Concerning the defect inspection, the NIR microscopy is used to control die to wafer stacking process, to reveal voids in the glue and cracks on the grinded silicon substrate. In this paper, we will present fast and nondestructive optical sensors based on low coherence infrared and white light interferometry and spectrometry techniques. These different sensors mounted on the same tool allow characterizing specifically and with an excellent sensitivity the different process steps described above. Concerning the defect inspections, techniques based on infrared microscopy and images techniques processing will be detailed and results will be presented to illustrate the possibilities of this inspection by microscopy.



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