Optical Characterization and Defect inspection for 3D stacked IC technology

2014 ◽  
Vol 2014 (1) ◽  
pp. 000630-000634 ◽  
Author(s):  
Gilles Fresquet ◽  
Jean-Philippe Piel
Keyword(s):  
Optical Sensors ◽  
Silicon Substrate ◽  
Critical Diameter ◽  
Back Side ◽  
Defect Inspection ◽  
Flexible Tool ◽  
Full Field ◽  
Silicon Thickness ◽  
Wafer Thinning

Advanced packaging technologies are rapidly evolving and 3D architectures requires new inspection and metrology techniques. Existing techniques need to be improved but new techniques must be developed to address new challenges induced by the last fabrication processes. To increase the development speed, it is a big advantage that metrology and defect inspection need to be present on the same platform and a flexible tool, with multi sensors, to be more versatile facing the different step of the process will be presented in this paper As 3D IC devices utilize TSVs for direct interconnect, the depth, top and bottom CD (critical diameter) of such TSVs with a diameter as small as 5 μm with a high aspect ratio is characterized. During wafer temporary bounding, which is an handling technique that allows wafer thinning with a thickness of less than 100 μm, by selecting the most sensitive sensor, determination of the thickness of each layer of the stack could be determined at the same time: silicon substrate, thin glue layer of few microns only and carrier which could be silicon or glass. After back-side processing and wafer thinning, the determination of the remaining silicon thickness (RST) below the TSV could be determined. Moreover back side roughness after grinding is also determined. After wafer thinning process, the TSVs are revealed at the back side of the wafer, leaving to appear copper pillars. The pillars height and co-planarity measurements are then addressed. Post CMP process control will be addressed by full field interferometry especially prior Copper to Copper direct bonding. Concerning the defect inspection, the NIR microscopy is used to control die to wafer stacking process, to reveal voids in the glue and cracks on the grinded silicon substrate. In this paper, we will present fast and nondestructive optical sensors based on low coherence infrared and white light interferometry and spectrometry techniques. These different sensors mounted on the same tool allow characterizing specifically and with an excellent sensitivity the different process steps described above. Concerning the defect inspections, techniques based on infrared microscopy and images techniques processing will be detailed and results will be presented to illustrate the possibilities of this inspection by microscopy.

Determination of Intrinsic Magnetic Parameters of SmCo5 Phase in Sintered Samples

2005 ◽  
Vol 498-499 ◽  
pp. 129-133 ◽  
Author(s):  
Marcos Flavio de Campos ◽  
Fernando José Gomes Landgraf
Keyword(s):  
Powder Metallurgy ◽  
Domain Wall ◽  
Kerr Effect ◽  
Critical Diameter ◽  
Optical Microscope ◽  
Domain Theory ◽  
Magnetic Domains ◽  
Magnetic Parameters ◽  
Intrinsic Parameters

SmCo5 magnets are usually produced by powder metallurgy route, including milling, compaction and orientation under magnetic field, sintering and heat treatment. The samples produced by powder metallurgy, with grain size around 10 μm, are ideal for determination of intrinsic parameters. The first step for determination of intrinsic magnetic parameters is obtaining images of domain structure in demagnetized samples. In the present study, the domain images were produced by means of Kerr effect, in a optical microscope. After the test of several etchings, Nital appears as the most appropriate for observation of magnetic domains by Kerr effect. Applying Stereology and Domain Theory, several intrinsic parameters of SmCo5 phase were determined: domain wall energy 120 erg/cm2, critical diameter for single domain particle size 2 μm and domain wall thickness 60 Å. In the case of SmCo5, and also other phases with high magnetocrystalline anisotropy, Domain Theory presents several advantages when compared with Micromagnetics.

Οπτικοί βιοαισθητήρες για την ανίχνευση βιομορίων χωρίς τη χρήση ιχνηθετών

2015 ◽  
Author(s):  
Αιμιλία Ψαρούλη
Keyword(s):  
Light Source ◽  
Silicon Substrate ◽  
Serum Samples ◽  
Fully Integrated ◽  
Monolithically Integrated ◽  
Immunochemical Determination ◽  
Wide Range ◽  
Myocardial Infraction ◽  
Biological Recognition

Recent developments in the fields of bioanalytical chemistry and microelectronics have resulted in a growing trend of transferring the classical analytical methods from the laboratory bench to the field through the development of portable devices or microsystems based on biosensors. Biosensors are self-contained integrated devices capable to provide analytical information using biological recognition molecules in direct spatial contact with a transducer. Biosensors using antibodies or antigens as biological recognition elements are termed as immunosensors and they are based on the same principle as the classical solid-phase immunoassays.The aim of this thesis was to develop and evaluate an optical immunosensor based on Mach-Zehnder Interferometry and integrated on silicon substrate for the immunochemical determination of clinical analytes. The optical sensor developed is fabricated entirely by mainstream silicon technology by the Optical Biosensors group of the Institute of Nanoscience and Nanotechnology of NCSR “Demokritos” and combines arrays of ten sensors in a single silicon chip. Each sensor consists of an integrated on silicon light source that emits a broad spectrum in visible-near ultraviolet range and it is coupled to an integrated silicon nitride waveguide which has been patterned into Mach-Zehnder interferometer. The signal is recorded either through a photodetector monolithically integrated onto the same silicon chip (fully integrated configuration) or through an external spectrometer (semi-integrated configuration). In the fully integrated configuration, the signal recorded is the total photocurrent across the whole spectral range, while in semi-integrated configuration the whole transmission spectrum is continuously recorded and is mathematically transformed (Fourier Transform) to phase shift. As in the classical Mach-Zehnder interferometers, the waveguide in the proposed sensor is split into two arms, the sensing one which is appropriately modified with recognition biomolecule and the reference arm that is covered by a protective layer. The specific binding of the analyte with the immobilized onto the surface recognition biomolecule causes an effective refractive index change at the surface of the sensing arm thus affecting the phase of the waveguided light with respect to the reference arm. Thus, when the two arms converge again, an interference spectrum is generated that is altered during bioreaction providing the ability of monitoring in real-time and without using labels. The main difference of the sensor developed with respect to classical Mach-Zehnder interferometers is that the light source is monolithically integrated on the same silicon substrate with the waveguides and the waveguided light is not monochromatic, but broad spectrum.At first in this study, the method for chemical activation of biofunctionalization of chips was optimized. It was found that the highest signals were obtained when chips where activated by (3-aminopropyl)triethoxysilane and deposition of biomolecules solutions using a microarray spotter. Then, a comparison of the two sensor configurations, i.e. the fully and the semi-integrated configuration was performed using a model binding assay namely the streptavidin-biotin reaction. Semi-integrated configuration provided higher detection sensitivities mainly due to lower between-sensor signal variation in the same chip and between different chips. Thus, this configuration was selected for further evaluation with respect to the determination of analytes of clinical interest and especially of immunochemical determination of C-reactive protein in human serum samples. CRP is a marker of inflammation widely used in everyday clinical practice for diagnosis and therapy monitoring of inflammatory situations. Nevertheless, CRP has been also proposed as a prognostic marker of myocardial infraction and three risk levels have been established; low risk for serum CRP concentrations < 1 μg/mL; medium risk for concentrations in the range 1-3 μg/mL; and high risk for concentrations >3 μg/mL. In the frame of the present thesis, enzyme immunoassays for the determination of CRP in microtitration plates both competitive and non-competitive were developed in order to select the most appropriate reagents and define the immunoassay conditions. Then both assay format were transferred and evaluated on the sensor. It was found that the non-competitive format offered higher responses and ability for regeneration of immobilized onto the sensor antibody against CRP and was therefore selected for the final sensor evaluation. The assay developed following the competitive format was sensitive and accurate as was demonstrated through recovery and dilution linearity experiments, and provided for analysis of samples with a wide range of CRP concentrations since it was immune to the presence of serum. In addition, the CRP values determined with the immunosensor developed in serum samples from unknown donors were in good agreement with those determined for the same samples by commercially available kits and instruments showing the reliability of the determinations performed with the immunosensor developed and its potential for analysis of clinical samples.

A New Apparatus for Installing Distributed Optical Sensors onto Uniaxial Compression Test Specimens to Measure Full-Field Strain Responses

2021 ◽  
Vol 45 (1) ◽  
pp. 20210021
Author(s):  
Shawn Hegger ◽  
Nicholas Vlachopoulos ◽  
Mark S. Diederichs
Keyword(s):  
Uniaxial Compression ◽  
Compression Test ◽  
Optical Sensors ◽  
Field Strain ◽  
Uniaxial Compression Test ◽  
Full Field ◽  
New Apparatus ◽  
Strain Responses

On-the-Fly Substrate Eccentricity Recognition for Robotized Manufacturing Systems

2005 ◽  
Vol 127 (1) ◽  
pp. 206-216 ◽  
Author(s):  
Martin Hosek ◽  
Jan Prochazka
Keyword(s):  
Optical Sensors ◽  
Semiconductor Manufacturing ◽  
Manufacturing Systems ◽  
Robotic Manipulator ◽  
End Effector ◽  
Transfer Path ◽  
The Difference ◽  
Manufacturing Applications ◽  
Actual Location

This paper describes a method for on-the-fly determination of eccentricity of a circular substrate, such as a silicon wafer in semiconductor manufacturing applications, carried by a robotic manipulator, where eccentricity refers to the difference between the actual location of the center of the substrate and its desired position on the end-effector of the robotic manipulator. The method utilizes a pair of external optical sensors located along the substrate transfer path. When moving a substrate along the transfer path, the robotic manipulator captures the positions and velocities of the end-effector at which the edges of the substrate are detected by the sensors. These data along with the expected radius of the substrate and the coordinates of the sensors are used to determine the eccentricity of the substrate. This information can be used by the robotic manipulator to compensate for eccentricity of the substrate when performing a place operation, resulting in the substrate being placed centered regardless of the amount and direction of the initial eccentricity. The method can also be employed to detect a defect, such as breakage, of a circular substrate and report an error condition which can abort or otherwise adjust operation of the robotic manipulator.

Deadhead Minimization with a Flexible Facility Locator Tool

2021 ◽  
pp. 036119812110444
Author(s):  
Kara Todd ◽  
Freyja Brandel-Tanis ◽  
Daniel Arias ◽  
Kari Edison Watkins
Keyword(s):  
Open Source Software ◽  
Operating Cost ◽  
Bus Rapid Transit ◽  
Rapid Transit ◽  
Flexible Tool ◽  
The Subject ◽  
Transit Agencies ◽  
A Site

As transit agencies expand, they may outgrow their existing bus storage and service facilities. When selecting a site for an additional facility, an important consideration is the change in bus deadhead time, which affects the agency’s operating costs. Minimizing bus deadhead time is the subject of many studies, though agencies may lack the necessary software or programming skill to implement those methods. This study presents a flexible tool for determination of bus facility location. Using the R dodgr package, it evaluates each candidate site based on a given bus network and existing depots and calculates the network minimum deadhead time for each potential set of facilities. Importantly, the tool could be used by any transit agency, no matter its resources. It runs on open-source software and uses only General Transit Feed Specification (GTFS) and data inputs readily available to transit agencies in the U.S.A., filling the accessibility gap identified in the literature. The tool is demonstrated through a case study with the Metropolitan Atlanta Rapid Transit Authority (MARTA), which is considering a new bus depot as it builds its bus rapid transit network. The case study used current MARTA bus GTFS data, existing depot locations, and vacant properties from Fulton County, Georgia. The tool evaluated 17 candidate sites and found that the winning site would save 29.7 deadhead hours on a typical weekday, which translates to more than $12,000 daily based on operating cost assumptions. The output provides important guidance to transit agencies evaluating sites for a new bus depot.

Evaluation of Low Stress Photo-Sensitive Spin On Dielectric Layers for Through Silicon Via (TSV) Copper Redistribution Layers

2011 ◽  
Vol 2011 (DPC) ◽  
pp. 000666-000698
Author(s):  
Christopher Jahnes ◽  
Eric Huenger ◽  
Scott Kisting
Keyword(s):  
Power Distribution ◽  
Flip Chip ◽  
Dielectric Materials ◽  
Back Side ◽  
Thermal Reliability ◽  
Dielectric Layers ◽  
Chip Size ◽  
Package Density ◽  
Silicon Vias ◽  
Wafer Thinning

To increase performance of semiconductor devices advances in packaging such as chip stacking (3D) and silicon carrier technologies (SoC) are being developed. Adaptation of these packaging fabrication methods offers the ability to incorporate functionality as well as provide memory and power distribution on one IC with increased signal bandwidth. An enabling element in both the stacking and silicon carrier technologies is through silicon vias (TSV) which electrically connect dies to a silicon carrier or via stacked chips (1). Creation of TSV involves via fabrication, wafer thinning and back side wafer finishing, to name a few, some of which are relatively new to semiconductor processing. Furthermore, because the wafer backside is accessible it can now be utilized to route wiring to further increase package density. The focus of this research was to evaluate photo-sensitive spin on dielectric materials (SOD) that can be used as the backside wiring levels, commonly referred to as redistribution layers (RDL) in TSV technologies. The two materials evaluated are; the epoxy based Dow INTERVIA™ 8023 Dielectric and the Benzocyclobutene (BCB) polymer, Dow CYCLOTENE™ 4000 product series. These dielectric materials have low stress and provide good planarization (2). Test vehicles with a chip size of 3.7 cm x 2.26 cm were fabricated with a 6 um wide copper RDL layer using the SOD materials of interest as well as conventional PECVD SiO2/SiN dielectric layers. The large chip size accommodated parallel Cu lines running 1.8 cm long with a spacing of 3 ï&#x81;¬m and represented an aggressive shorting test for the SOD materials. It also enhances chip distortion after thinning and is evaluated for all three test vehicles. Chips were then electrically tested through simulated 260° C reflow cycles (for flip chip joining) and accelerated thermal reliability tests from −55° C to 125° C for 1000 cycles.

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