Electrical and optical properties of copper-based chalcogenide thin films deposited by pulsed laser deposition at room temperature: Toward p-channel thin film transistor fabricable at room temperature

2008 ◽  
Vol 205 (8) ◽  
pp. 2007-2012 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Hiroshi Yanagi ◽  
Toshio Kamiya ◽  
Masahiro Hirano ◽  
Noriaki Matsunami ◽  
...  
2008 ◽  
Vol 23 (2-4) ◽  
pp. 497-501 ◽  
Author(s):  
Jun Hong Noh ◽  
Jae-Sul An ◽  
Jin Young Kim ◽  
Chin Moo Cho ◽  
Kug Sun Hong ◽  
...  

2015 ◽  
Vol 49 (5) ◽  
pp. 563-569 ◽  
Author(s):  
O. A. Novodvorsky ◽  
L. S. Parshina ◽  
O. D. Khramova ◽  
V. A. Mikhalevsky ◽  
K. D. Shcherbachev ◽  
...  

2005 ◽  
Vol 891 ◽  
Author(s):  
Kousik Samanta ◽  
Pijush Bhattacharya ◽  
Ram S. Katiyar ◽  
W. Iwamoto ◽  
R. R. Urbano ◽  
...  

ABSTRACTThin films of Co substituted ZnO and ZnCo2O4 were deposited on c-axis (0001) oriented Al2O3 substrates using pulsed laser deposition. The XRD results showed all the films were highly (002) oriented with a less intense peak of (311) for ZnCo2O4 thin film. Micro-Raman spectra of ceramic targets showed the modes related to wurtzite ZnO and spinel ZnCo2O4 structures. In thin films of Zn1−xCoxO no modes corresponding to ZnCo2O4 were detected. The intensity of E1(LO) and multiphonon peak at 584 and 540 cm−1 respectively, increased with increase in Co substitution. The optical absorption of the films showed that the band gap decreased with increase of Co concentrations at room temperature along with the sub-bandgap absorptions due to d-d transitions of Co2+. Similar sub-bandgap d-d transition was also observed in the absorption spectra ZnCo2O4 thin films. The highest saturated magnetization (0.2μB/Co) was obtained for 5%Co substituted ZnO.


2010 ◽  
Vol 165 (6-10) ◽  
pp. 592-600 ◽  
Author(s):  
S. Lanzafame ◽  
A. M. Mezzasalma ◽  
G. Mondio ◽  
T. Serafino ◽  
F. Barreca ◽  
...  

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