X-ray characterization of epi-Ge/Pr2 O3 /Si(111) layer stacks by pole figures and reciprocal space mapping

2009 ◽  
Vol 206 (8) ◽  
pp. 1809-1815 ◽  
Author(s):  
Peter Zaumseil ◽  
Alessandro Giussani ◽  
Peter Rodenbach ◽  
Thomas Schroeder
Keyword(s):  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray ◽  
Pole Figures

Asymmetrical reciprocal space mapping using X-ray diffraction: a technique for structural characterization of GaN/AlN superlattices

CrystEngComm ◽  
2017 ◽  
Vol 19 (22) ◽  
pp. 2977-2982 ◽  
Author(s):  
H. V. Stanchu ◽  
A. V. Kuchuk ◽  
M. Barchuk ◽  
Yu. I. Mazur ◽  
V. P. Kladko ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Space Mapping ◽  
Reciprocal Space ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
X Ray

In Situ X-Ray Reciprocal Space Mapping for Characterization of Nanomaterials

2016 ◽  
pp. 507-544 ◽  
Author(s):  
Peter Siffalovic ◽  
Karol Vegso ◽  
Martin Hodas ◽  
Matej Jergel ◽  
Yuriy Halahovets ◽  
...  
Keyword(s):  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray

scholarly journals Characterization of InGaN and InAlN Epilayers by Microdiffraction X-Ray Reciprocal Space Mapping

2012 ◽  
Vol 1396 ◽  
Author(s):  
V. Kachkanov ◽  
I.P. Dolbnya ◽  
K.P. O’Donnell ◽  
K. Lorenz ◽  
S. Pereira ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Composition Gradient ◽  
Reciprocal Space Mapping ◽  
Strain Fields ◽  
X Ray ◽  
Sapphire Substrates ◽  
Full Volume

ABSTRACTWe report a study of InGaN and InAlN epilayers grown on GaN/Sapphire substrates by microfocused three-dimensional X-ray Reciprocal Space Mapping (RSM). The analysis of the full volume of reciprocal space, while probing samples on the microscale with a focused X-ray beam, allows us to gain uniquely valuable information about the microstructure of III-N alloy epilayers. It is found that “seed” InGaN mosaic nanocrystallites are twisted with respect to the ensemble average and strain free. This indicates that the growth of InGaN epilayers follows the Volmer-Weber mechanism with nucleation of “seeds” on strain fields generated by thea-type dislocations which are responsible for the twist of underlying GaN mosaic blocks. In the case of InAlN epilayer formation of composition gradient was observed at the beginning of the epitaxial growth.

Time-resolved X-ray reciprocal space mapping of the crystal under external electric field

2018 ◽  
Vol 189 (02) ◽  
pp. 187-194 ◽  
Author(s):  
Nikita V. Marchenkov ◽  
Anton G. Kulikov ◽  
Ivan I. Atknin ◽  
Arsen A. Petrenko ◽  
Alexander E. Blagov ◽  
...  
Keyword(s):  
Electric Field ◽  
External Electric Field ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
Time Resolved ◽  
X Ray

Structural modulation on multilayered bismuth cuprate observed by x-ray reciprocal space mapping

2005 ◽  
Vol 97 (10) ◽  
pp. 103904 ◽  
Author(s):  
Satoru Kaneko ◽  
Kensuke Akiyama ◽  
Yoshitada Shimizu ◽  
Hiroyasu Yuasa ◽  
Yasuo Hirabayashi ◽  
...  
Keyword(s):  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray ◽  
Structural Modulation

X-ray reciprocal space mapping of a (112) oriented HgTe/Hg0.1Cd0.9Te superlattice

1997 ◽  
Vol 71 (13) ◽  
pp. 1822-1824 ◽  
Author(s):  
M. Li ◽  
C. R. Becker ◽  
R. Gall ◽  
W. Faschinger ◽  
G. Landwehr
Keyword(s):  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray

Characterization of metamorphic InxAl1−xAs∕GaAs buffer layers using reciprocal space mapping

2007 ◽  
Vol 101 (6) ◽  
pp. 063523 ◽  
Author(s):  
D. Lee ◽  
M. S. Park ◽  
Z. Tang ◽  
H. Luo ◽  
R. Beresford ◽  
...  
Keyword(s):  
Space Mapping ◽  
Reciprocal Space ◽  
Buffer Layers ◽  
Reciprocal Space Mapping

Reciprocal Space Mapping of X-Ray Diffraction Intensity of GaN-Based Laser Diodes Grown on GaN Substrates

2003 ◽  
Vol 798 ◽  
Author(s):  
K. Tachibana ◽  
Y. Harada ◽  
S. Saito ◽  
S. Nunoue ◽  
H. Katsuno ◽  
...  
Keyword(s):  
Output Power ◽  
Sapphire Substrate ◽  
Light Output ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Light Output Power ◽  
Reciprocal Space Mapping ◽  
X Ray

ABSTRACTCharacterization by reciprocal space mapping of x-ray diffraction (XRD) intensity was carried out for epitaxial layers of GaN-based laser structures on two GaN substrates: GaN substrate and GaN template on sapphire substrate. The difference between these two substrates was shown clearly. The distribution of XRD intensity of the epitaxial layers on GaN substrate was smaller than that of the epitaxial layers on GaN template on sapphire substrate. In the lasers with the epitaxial structure on GaN substrate, the light output power was as high as 200 mW under continuous-wave operation at room temperature. Excellent noise characteristics with relative intensity noise of -132 dB/Hz were also obtained at a low light output power of 3 mW without any high-frequency modulation. These results support that GaN substrates are promising for realizing GaN-based lasers with high performance.

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