High-current AlGaN/GaN high electron mobility transistors achieved by selective-area growth via plasma-assisted molecular beam epitaxy

physica status solidi (a) ◽

10.1002/pssa.201330157 ◽

2013 ◽

Vol 211 (1) ◽

pp. 180-183 ◽

Author(s):

Liang Pang ◽

Philip Krein ◽

Ki-Won Kim ◽

Jung-Hee Lee ◽

Kyekyoon Kevin Kim

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Selective Area Growth ◽

High Electron ◽

High Current ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Selective Area ◽

Download Full-text

Analysis of AlGaN/GaN high electron mobility transistors with nonalloyed Ohmic contacts achieved by selective area growth using plasma assisted molecular beam epitaxy

IOSR Journal of Engineering ◽

10.9790/3021-04240813 ◽

2014 ◽

Vol 4 (2) ◽

pp. 08-13 ◽

Author(s):

Liang Pang, Kyekyoon Kim

Keyword(s):

Molecular Beam Epitaxy ◽

Ohmic Contacts ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Selective Area Growth ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Selective Area ◽

Download Full-text

Breakdown Voltage Enhancement of AlGaN/GaN High-Electron-Mobility Transistors via Selective-Area Growth for Ohmic Contacts over Ion Implantation

Journal of Electronic Materials ◽

10.1007/s11664-010-1139-y ◽

2010 ◽

Vol 39 (5) ◽

pp. 499-503 ◽

Author(s):

Liang Pang ◽

Hui-Chan Seo ◽

Patrick Chapman ◽

Ilesanmi Adesida ◽

Kyekyoon (Kevin) Kim

Keyword(s):

Ion Implantation ◽

Electron Mobility ◽

Ohmic Contacts ◽

High Electron Mobility Transistors ◽

Selective Area Growth ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Selective Area ◽

Download Full-text

Capacitance and drain current deep level transient spectroscopy measurements on molecular beam epitaxy grown GaAs/ln0·25Ga0·75As/Al0·3Ga0·7As high electron mobility transistors

Materials Science and Technology ◽

10.1179/mst.1995.11.10.1079 ◽

1995 ◽

Vol 11 (10) ◽

pp. 1079-1082 ◽

Author(s):

Y. Haddab ◽

M. A. Py ◽

J.-M. Bonard ◽

H.-J. Bühlmann ◽

M. lIegems

Keyword(s):

Molecular Beam Epitaxy ◽

Deep Level Transient Spectroscopy ◽

Molecular Beam ◽

Drain Current ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Transient Spectroscopy

Download Full-text

Molecular beam epitaxy growth and characterization of InGaP/InGaAs pseudomorphic high electron mobility transistors (HEMTs) having a channel layer over critical layer thickness

IEEE Transactions on Electron Devices ◽

10.1109/16.987103 ◽

2002 ◽

Vol 49 (3) ◽

pp. 354-360 ◽

Author(s):

Seong-June Jo ◽

Jeong Hoon Kim ◽

Jong-In Song

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

Critical Layer Thickness ◽

High Electron Mobility ◽

Electron Mobility Transistors

Download Full-text

High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.125418 ◽

1999 ◽

Vol 75 (23) ◽

pp. 3653-3655 ◽

Author(s):

M. J. Murphy ◽

K. Chu ◽

H. Wu ◽

W. Yeo ◽

W. J. Schaff ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

High Frequency ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

Download Full-text

Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.2919163 ◽

2008 ◽

Vol 103 (9) ◽

pp. 093529 ◽

Author(s):

A. L. Corrion ◽

C. Poblenz ◽

F. Wu ◽

J. S. Speck

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Buffer Layers ◽

Morphological Properties ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

Download Full-text

Fabrication of strained and double heterojunction In/sub x/Ga/sub 1-x/P/In/sub 0.2/Ga/sub 0.8/As high electron mobility transistors grown by solid-source molecular beam epitaxy

IEEE Transactions on Electron Devices ◽

10.1109/16.841249 ◽

2000 ◽

Vol 47 (5) ◽

pp. 1115-1117 ◽

Author(s):

S.F. Yoon ◽

B.P. Gay ◽

H.Q. Zheng ◽

H.T. Kam ◽

J. Degenhardt

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Heterojunction

Download Full-text

Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.4959831 ◽

2016 ◽

Vol 109 (4) ◽

pp. 041602 ◽

Author(s):

S. Joglekar ◽

M. Azize ◽

M. Beeler ◽

E. Monroy ◽

T. Palacios

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Ohmic Contacts ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Surface Treatments ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

Download Full-text

AlGaN/GaN high electron mobility transistors on 100 mm silicon substrates by plasma molecular beam epitaxy

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3549889 ◽

2011 ◽

Vol 29 (3) ◽

pp. 03C107 ◽

Author(s):

W. E. Hoke ◽

T. D. Kennedy ◽

J. J. Mosca ◽

A. J. Kerr ◽

A. Torabi ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Silicon Substrates ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

Download Full-text

Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy

IEICE Transactions on Electronics ◽

10.1093/ietele/e89-c.7.906 ◽

2006 ◽

Vol E89-C (7) ◽

pp. 906-912 ◽

Author(s):

A. CORRION

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Recent Developments

Download Full-text