Physical and Electrochemical Characterization of Crystalline Silicon Surfaces Modified by Aluminum

2017 ◽  
Vol 215 (2) ◽  
pp. 1700543
Author(s):  
Danilo Roque Huanca ◽  
Walter Jaimes Salcedo
Author(s):  
Yuk L. Tsang ◽  
Alex VanVianen ◽  
Xiang D. Wang ◽  
N. David Theodore

Abstract In this paper, we report a device model that has successfully described the characteristics of an anomalous CMOS NFET and led to the identification of a non-visual defect. The model was based on detailed electrical characterization of a transistor exhibiting a threshold voltage (Vt) of about 120mv lower than normal and also exhibiting source to drain leakage. Using a simple graphical simulation, we predicted that the anomalous device was a transistor in parallel with a resistor. It was proposed that the resistor was due to a counter doping defect. This was confirmed using Scanning Capacitance Microscopy (SCM). The dopant defect was shown by TEM imaging to be caused by a crystalline silicon dislocation.


2016 ◽  
Vol 12 (6) ◽  
pp. 602-611 ◽  
Author(s):  
O. Sotelo-Mazón ◽  
Cecilia Cuevas-Arteaga ◽  
J. Porcayo-Calderón ◽  
G. Izquierdo-Montalvo

2021 ◽  
pp. 138502
Author(s):  
Yuanming Wang ◽  
Yunhong Song ◽  
Chunling Ma ◽  
Hong-qi Xia ◽  
Ranran Wu ◽  
...  

2021 ◽  
Vol 2021 (15) ◽  
pp. 1498-1504
Author(s):  
Dominik Natke ◽  
Annika Preiss ◽  
Stephen Klimke ◽  
Takuya Shiga ◽  
Roman Boca ◽  
...  

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