Recent progress in exploring the magnetic solids with room‐temperature skyrmionic spin configurations

Author(s):  
Zhipan Ma ◽  
Lingwei Li
2020 ◽  
Vol 35 (6) ◽  
pp. 630-645
Author(s):  
Jia-ying Yang ◽  
Hao-jie Han ◽  
Hlib Repich ◽  
Ri-cheng Zhi ◽  
Chang-zhen Qu ◽  
...  

Author(s):  
Krishna Karki ◽  
Shova D. Subedi ◽  
Dmitry Martyshkin ◽  
Vladimir V. Fedorov ◽  
Sergey Mirov

2020 ◽  
Vol 78 (10) ◽  
pp. 1030
Author(s):  
Liang Zhang ◽  
Wen-Long Zhao ◽  
Meng Li ◽  
Hai-Yan Lu ◽  
Chuan-Feng Chen

ISRN Ceramics ◽  
2013 ◽  
Vol 2013 ◽  
pp. 1-20 ◽  
Author(s):  
Arun S. Wagh

Chemically bonded phosphate ceramics have made an excellent progress in the last 10 years and are poised to be one of the major inorganic room-temperature setting materials for nuclear, structural, dental, and prosthetic applications. They are also poised to be the first inorganic industrial coatings for fire and corrosion protection applications. In 2004 the author in his book, Chemically Bonded Phosphate Ceramics, presented general theory, compositions, methods of fabrication, and preliminary commercial products that appeared in the market ten years ago. This paper reviews that background and presents advances of last ten years with an emphasis on the recent applications in the nuclear field.


1987 ◽  
Vol 102 ◽  
Author(s):  
H. Ishiwara ◽  
T. Asano ◽  
K. Tsutsui ◽  
H. C. Lee ◽  
S. Furukawa

ABSTRACTRecent progress in the heteroepitaxial growth of layered structures of Si, Ge, GaAs, and alkaline earth fluorides is reviewed. Effectiveness of the predeposition technique, in which a thin Si layer is deposited on the CaF2 surface at room temperature prior to the growth of a thick Si film at 800°C, is shown for the growth of Si films on CaF2/Si structures. In case of the overgrowth of Ge and GaAs films on (111) substrates, modification of the fluoride surface by electron beam exposure is effective to increase the wettability between fluoride and semiconductor films and to improve the crystallinity and surface morphology of the films. Finally, antiphase disorder in the GaAs(l00) films grown on fluorides is experimentally studied and the generation mechanisms are discussed.


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