Layered Structures Composed of Si, Ge, GaAs, and Fluorides

1987 ◽  
Vol 102 ◽  
Author(s):  
H. Ishiwara ◽  
T. Asano ◽  
K. Tsutsui ◽  
H. C. Lee ◽  
S. Furukawa
Keyword(s):  
Electron Beam ◽  
Alkaline Earth ◽  
Room Temperature ◽  
Recent Progress ◽  
Layered Structures ◽  
Semiconductor Films ◽  
Heteroepitaxial Growth ◽  
Gaas Films ◽  
Generation Mechanisms ◽  
Si Films

ABSTRACTRecent progress in the heteroepitaxial growth of layered structures of Si, Ge, GaAs, and alkaline earth fluorides is reviewed. Effectiveness of the predeposition technique, in which a thin Si layer is deposited on the CaF2 surface at room temperature prior to the growth of a thick Si film at 800°C, is shown for the growth of Si films on CaF2/Si structures. In case of the overgrowth of Ge and GaAs films on (111) substrates, modification of the fluoride surface by electron beam exposure is effective to increase the wettability between fluoride and semiconductor films and to improve the crystallinity and surface morphology of the films. Finally, antiphase disorder in the GaAs(l00) films grown on fluorides is experimentally studied and the generation mechanisms are discussed.

Layered Structures Composed of Si, Ge, GaAs, and Fluorides

1987 ◽  
Vol 107 ◽  
Author(s):  
H. Ishiwara ◽  
T. Asano ◽  
K. Tsutsui ◽  
H.C. Lee ◽  
S. Furukawa
Keyword(s):  
Electron Beam ◽  
Alkaline Earth ◽  
Room Temperature ◽  
Recent Progress ◽  
Layered Structures ◽  
Semiconductor Films ◽  
Heteroepitaxial Growth ◽  
Gaas Films ◽  
Generation Mechanisms ◽  
Si Films

AbstractRecent progress in the heteroepitaxial growth of layered structures of Si, Ge, GaAs, and alkaline earth fluorides is reviewed. Effectiveness of the predeposition technique, in which a thin Si layer is deposited on the CaF2 surface at room temperature prior to the growth of a thick Si film at 800 °C, is shown for the growth of Si films on CaF2/Si structures. In case of the overgrowth of Ge and GaAs films on (111) substrates, modification of the fluoride surface by electron beam exposure is effective to increase the wet-tability between fluoride and semiconductor films and to improve the crystal -1 inity and surface morphology of the films. Finally, antiphase disorder in the GaAs(100) films grown on fluorides is experimentally studied and the generation mechanisms are discussed.

Heteroepitaxy of Si, Ge, and GaAs Films on CaF2/Si Structures

1986 ◽  
Vol 67 ◽  
Author(s):  
H. Ishiwara ◽  
T. Asano ◽  
H. C. Lee ◽  
Y. Kuriyama ◽  
K. Seki ◽  
...  
Keyword(s):  
Smooth Surface ◽  
Field Effect Transistors ◽  
Growth Parameters ◽  
Growth Conditions ◽  
Heteroepitaxial Growth ◽  
Gate Electrodes ◽  
Gaas Films ◽  
Temperature And Growth ◽  
Si Films

ABSTRACTRecent progress in the research of heteroepitaxial growth of Si, Ge, and GaAs films on CaF2/Si structures is reviewed. Growth conditions and material properties of the Si/CaF2/Si structures are first discussed. It is shown that such growth techniques as the predeposition technique and the recrystallization method are useful to improve the crystalline quality of Si films on the CaF2/Si structures. Then, device application of the Si/CaF2/Si structure to field effect transistors with epitaxial MIS (metal-insulatorsemiconductor) gate electrodes is described. Finally, epitaxial growth of Ge and GaAs films on the CaF2/Si structure are discussed, in which such growth parameters as the substrate temperature and growth rate are optimized to obtain high-quality films with excellent crystallinity and smooth surface.

Comparison of the Strain and Stress in Bonded and Epitaxial Gallium Arsenide on Silicon by Photoreflectance Spectroscopy Measurements

2002 ◽  
Vol 744 ◽  
Author(s):  
Spyros Gallis ◽  
George Deligeorgis ◽  
Alexandros Georgakilas ◽  
Marin Alexe
Keyword(s):  
Comparative Study ◽  
Room Temperature ◽  
Thermal Strain ◽  
Gaas Layer ◽  
Good Reliability ◽  
Thermal Expansion Coefficients ◽  
Photoreflectance Spectroscopy ◽  
Gaas Films ◽  
Si Films ◽  
The Comparative Study

ABSTRACTThe presence of an internal strain arising from the GaAs/spin-on-glass (SOG)/Si bonding procedure was investigated. In addition, the magnitude of any residual stress at room temperature and the mechanisms that may impose a stress, leading to elastic or plastic deformation of the bonded GaAs films, were identified.A comparative study of biaxial strain and stress, as a function of temperature in the range of 80- 300 K, in a bonded 2 μm-thick GaAs/SOG/Si sample and in an epitaxial 2 μm-thick GaAs/Si sample, grown by molecular beam epitaxy (MBE), will be presented. The type and magnitude of strain were determined by photoreflectance spectroscopy. In the case of GaAs/SOG/Si, the strain in the GaAs layer was found to be negligible, with compressive character, at room temperature and tensile in all other measured temperatures, whereas for the epitaxial GaAs/Si, the strain was taking significant tensile values in all temperatures. Furthermore, the strain for both samples was increasing with temperature reduction, as it is expected for a thermal strain induced by the different thermal expansion coefficients of GaAs and Si.The comparative study indicated clearly that the bonded GaAs/SOG/Si films are essentially strain-free at room temperature. This is a very important result for the good reliability of laser diodes that can be processed from such bonded GaAs material, which also has a crystal quality similar to that of the available GaAs substrates.

Heteroepitaxial Si-, Ge-, and Gaas-On-Insulator Structures on Si Substrates by Use of Fluoride Insulators

1987 ◽  
Vol 91 ◽  
Author(s):  
T. Asano ◽  
H. Ishiwara ◽  
S. Furukawa
Keyword(s):  
Alkaline Earth ◽  
Electron Beam Irradiation ◽  
Growth Characteristics ◽  
Beam Irradiation ◽  
Heteroepitaxial Growth ◽  
Si Substrates ◽  
Earth Fluoride ◽  
Alkaline Earth Fluoride ◽  
Gaas Films ◽  
Annealing Effects

ABSTRACTHeteroepitaxial growth of alkaline earth fluoride films on Si substrates and Si, Ge, and GaAs films on the fluoride/Si structures, is reviewed. Growth of single crystalline fluoride films on Si is first discussed. Then the usefulness of novel heteroepitaxial technologies, the predeposition method and the electron beam irradiation method, is demonstrated in the growth of Si and Ge films on CaF2/Si structures. Finally fundamental growth characteristics of GaAs films on CaF2/Si structures and annealing effects on the crystallinity of the GaAs films are described.

Domain Formation in Synthetic Quartz

1971 ◽  
Vol 29 ◽  
pp. 156-157
Author(s):  
Joseph J. Comer
Keyword(s):  
Electron Beam ◽  
Room Temperature ◽  
Domain Formation ◽  
Synthetic Quartz ◽  
Transmission Electron ◽  
Black Spots ◽  
Diffraction Mode ◽  
Domain Boundaries ◽  
Kikuchi Lines ◽  
Straight Lines

Domains visible by transmission electron microscopy, believed to be Dauphiné inversion twins, were found in some specimens of synthetic quartz heated to 680°C and cooled to room temperature. With the electron beam close to parallel to the [0001] direction the domain boundaries appeared as straight lines normal to <100> and <410> or <510> directions. In the selected area diffraction mode, a shift of the Kikuchi lines was observed when the electron beam was made to traverse the specimen across a boundary. This shift indicates a change in orientation which accounts for the visibility of the domain by diffraction contrast when the specimen is tilted. Upon exposure to a 100 KV electron beam with a flux of 5x 1018 electrons/cm2sec the boundaries are rapidly decorated by radiation damage centers appearing as black spots. Similar crystallographio boundaries were sometimes found in unannealed (0001) quartz damaged by electrons.

THERMOLUMINESCENCE IN ALKALINE-EARTH DOPED KCl IRRADIATED AT ROOM TEMPERATURE

1976 ◽  
Vol 37 (C7) ◽  
pp. C7-158-C7-158
Author(s):  
A. RASCÓN ◽  
J. L. ALVAREZ RIVAS
Keyword(s):  
Alkaline Earth ◽  
Room Temperature

Optimization of the Display Parameters of a Room Temperature Nematic Material (6CHBT) by Using Electron Beam Irradiation

2010 ◽  
Vol 6 (1) ◽  
pp. 8-13 ◽  
Author(s):  
Rohit Verma ◽  
Ravindra Dhar ◽  
M. C. Rath ◽  
Sisir K. Sarkar ◽  
V. K. Wadhawan ◽  
...  
Keyword(s):  
Electron Beam ◽  
Room Temperature ◽  
Electron Beam Irradiation ◽  
Beam Irradiation

Recent progress on the design of hollow carbon spheres to host sulfur in room-temperature sodium–sulfur batteries

2020 ◽  
Vol 35 (6) ◽  
pp. 630-645
Author(s):  
Jia-ying Yang ◽  
Hao-jie Han ◽  
Hlib Repich ◽  
Ri-cheng Zhi ◽  
Chang-zhen Qu ◽  
...  
Keyword(s):  
Room Temperature ◽  
Recent Progress ◽  
Carbon Spheres ◽  
Hollow Carbon ◽  
Sodium Sulfur ◽  
Hollow Carbon Spheres

Instabilities, Elasticity, and Wetting Effect in Multilayer Heteroepitaxial Growth

2003 ◽  
Vol 794 ◽  
Author(s):  
Zhi-Feng Huang ◽  
Rashmi C. Desai
Keyword(s):  
Periodic Structures ◽  
Morphological Evolution ◽  
Surface Profile ◽  
Theoretical Work ◽  
Semiconductor Films ◽  
Morphological Instability ◽  
Heteroepitaxial Growth ◽  
Surface And Interface ◽  
Short Period ◽  
Short Period Superlattices

ABSTRACTFor multilayer semiconductor films comprising various material layers, the coupling of elastic states in different layers as well as the nonequilibrium nature of the growing process are essential in understanding the surface and interface morphological instability and hence the growth mechanisms of nanostructures in the overall film. We present the theoretical work on the stress-driven instabilities during the heteroepitaxial growth of multilayers, based on the elastic analysis and the continuous nonequilibrium model. We develop a general theory which determines the morphological evolution of surface profile of the multilayer system, and then apply the results to two types of periodic structures that are being actively investigated: alternating tensile/compressive and strained/spacer multilayers. The wetting effect, which arises from the material properties changing across layer-layer interfaces, is incorporated. It exhibits a significant influence of stabilization on film morphology, particularly for the short-period superlattices. Our results are consistent with the experimental observations in AlAs/InAs/InP(001) and Ge/Si(001) multilayer structures.

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