Recent Progress in Room-Temperature Wafer Bonding Technology in Ambient Air

The catalyst-free oxidative cleavage of (Z)-triaryl-substituted alkenes bearing pyridyl motif with ambient air under irradiation of blue LED at room temperature has been developed. The reaction was facile and scalable,...

Download Full-text

Room-Temperature Solution-Processed 0D/1D Bilayer Electrodes for Translucent CsPbBr3 Perovskite Photovoltaics

Nanomaterials ◽

10.3390/nano11061489 ◽

2021 ◽

Vol 11 (6) ◽

pp. 1489

Author(s):

Bhaskar Parida ◽

Saemon Yoon ◽

Dong-Won Kang

Keyword(s):

Solar Cells ◽

Indium Tin Oxide ◽

High Performance ◽

Room Temperature ◽

Low Cost ◽

Perovskite Solar Cells ◽

Ambient Air ◽

Plasma Damage ◽

Temperature Solution ◽

Ito Nanoparticles

Materials and processing of transparent electrodes (TEs) are key factors to creating high-performance translucent perovskite solar cells. To date, sputtered indium tin oxide (ITO) has been a general option for a rear TE of translucent solar cells. However, it requires a rather high cost due to vacuum process and also typically causes plasma damage to the underlying layer. Therefore, we introduced TE based on ITO nanoparticles (ITO-NPs) by solution processing in ambient air without any heat treatment. As it reveals insufficient conductivity, Ag nanowires (Ag-NWs) are additionally coated. The ITO-NPs/Ag-NW (0D/1D) bilayer TE exhibits a better figure of merit than sputtered ITO. After constructing CsPbBr3 perovskite solar cells, the device with 0D/1D TE offers similar average visible transmission with the cells with sputtered ITO. More interestingly, the power conversion efficiency of 0D/1D TE device was 5.64%, which outperforms the cell (4.14%) made with sputtered-ITO. These impressive findings could open up a new pathway for the development of low-cost, translucent solar cells with quick processing under ambient air at room temperature.

Download Full-text

Progress in wafer bonding technology towards MEMS, high-power electronics, optoelectronics, and optofluidics

International Journal of Optomechatronics ◽

10.1080/15599612.2020.1857890 ◽

2020 ◽

Vol 14 (1) ◽

pp. 94-118

Author(s):

Jikai Xu ◽

Yu Du ◽

Yanhong Tian ◽

Chenxi Wang

Keyword(s):

Power Electronics ◽

High Power ◽

Wafer Bonding ◽

Bonding Technology

Download Full-text

High Precision Low Temperature Direct Wafer Bonding Technology for Wafer-Level 3D ICs Manufacturing

ECS Transactions ◽

10.1149/07509.0345ecst ◽

2016 ◽

Vol 75 (9) ◽

pp. 345-353 ◽

Cited By ~ 8

Author(s):

F. Kurz ◽

T. Plach ◽

J. Suss ◽

T. Wagenleitner ◽

D. Zinner ◽

...

Keyword(s):

Low Temperature ◽

High Precision ◽

Wafer Bonding ◽

Wafer Level ◽

3D Ics ◽

Direct Wafer Bonding ◽

Bonding Technology

Download Full-text

Smart‐Cut® : The Basic Fabrication Process for Unibond® Soi Wafers

MRS Proceedings ◽

10.1557/proc-446-177 ◽

1996 ◽

Vol 446 ◽

Cited By ~ 6

Author(s):

A.J. Auberton‐Hervé ◽

T. Barge ◽

F. Metral ◽

M. Bruel ◽

B. Aspar ◽

...

Keyword(s):

Wafer Bonding ◽

Low Cost ◽

Bulk Silicon ◽

High Quality ◽

Thin Film Thickness ◽

Hydrogen Implantation ◽

Electric Behavior ◽

Bonding Technology ◽

Good Uniformity ◽

Quality Surface

AbstractThe advantage of SOI wafers for device manufacture has been widely studied. To be a real challenger to bulk silicon, SOI producers have to offer SOI wafers in large volume and at low cost. The new Smart‐Cut® SOI process used for the manufacture of the Unibond® SOI wafers answers most of the SOI wafer manufacturability issues. The use of Hydrogen implantation and wafer bonding technology is the best combination to get good uniformity and high quality for both the SOI and buried oxide layer. In this paper, the Smart‐Cut® process is described in detail and material characteristics of Unibond® wafers such as crystalline quality, surface roughness, thin film thickness homogeneity, and electric behavior.

Download Full-text

Recent progress in exploring the magnetic solids with room‐temperature skyrmionic spin configurations

physica status solidi (a) ◽

10.1002/pssa.202100333 ◽

2021 ◽

Author(s):

Zhipan Ma ◽

Lingwei Li

Keyword(s):

Room Temperature ◽

Recent Progress ◽

Magnetic Solids

Download Full-text

Room-Temperature Wafer Bonded Multi-Junction Solar Cell Grown by Solid State Molecular Beam Epitaxy

MRS Advances ◽

10.1557/adv.2016.429 ◽

2016 ◽

Vol 1 (43) ◽

pp. 2907-2916 ◽

Cited By ~ 3

Author(s):

Shulong Lu ◽

Shiro Uchida

Keyword(s):

Solar Cell ◽

Molecular Beam Epitaxy ◽

Wafer Bonding ◽

Room Temperature ◽

Molecular Beam ◽

Short Circuit ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Device Structure ◽

Junction Solar Cell

ABSTRACTWe studied the InGaP/GaAs//InGaAsP/InGaAs four-junction solar cells grown by molecular beam epitaxy (MBE), which were fabricated by the novel wafer bonding. In order to reach a higher conversion efficiency at highly concentrated illumination, heat generation should be minimized. We have improved the device structure to reduce the thermal and electrical resistances. Especially, the bond resistance was reduced to be the lowest value of 2.5 × 10-5 Ohm cm2 ever reported for a GaAs/InP wafer bond, which was obtained by the specific combination of p+-GaAs/n-InP bonding and by using room-temperature wafer bonding. Furthermore, in order to increase the short circuit current density (Jsc) of 4-junction solar cell, we have developed the quality of InGaAsP material by increasing the growth temperature from 490 °C to 510 °C, which leads to a current matching. In a result, an efficiency of 42 % at 230 suns of the four-junction solar cell fabricated by room-temperature wafer bonding was achieved.

Download Full-text