bonding technology
Recently Published Documents


TOTAL DOCUMENTS

608
(FIVE YEARS 99)

H-INDEX

25
(FIVE YEARS 3)

Author(s):  
Yuchen Dong ◽  
Hongyang Wang ◽  
Dongshuai Wang ◽  
Ziqian Sun ◽  
Liming Liu ◽  
...  
Keyword(s):  

2021 ◽  
Vol 18 (4) ◽  
pp. 14-17
Author(s):  
Andreas Groß ◽  
Bernd Mayer ◽  
Katharina Haag

2021 ◽  
pp. 187-215
Author(s):  
Jikai Xu ◽  
Zhihao Ren ◽  
Bowei Dong ◽  
Chenxi Wang ◽  
Yanhong Tian ◽  
...  

2021 ◽  
Vol 11 (20) ◽  
pp. 9444
Author(s):  
Yoonho Kim ◽  
Seungmin Park ◽  
Sarah Eunkyung Kim

Low-temperature Cu-Cu bonding technology plays a key role in high-density and high-performance 3D interconnects. Despite the advantages of good electrical and thermal conductivity and the potential for fine pitch patterns, Cu bonding is vulnerable to oxidation and the high temperature of the bonding process. In this study, chip-level Cu bonding using an Ag nanofilm at 150 °C and 180 °C was studied in air, and the effect of the Ag nanofilm was investigated. A 15-nm Ag nanofilm prevented Cu oxidation prior to the Cu bonding process in air. In the bonding process, Cu diffused rapidly to the bonding interface and pure Cu-Cu bonding occurred. However, some Ag was observed at the bonding interface due to the short bonding time of 30 min in the absence of annealing. The shear strength of the Cu/Ag-Ag/Cu bonding interface was measured to be about 23.27 MPa, with some Ag remaining at the interface. This study demonstrated the good bonding quality of Cu bonding using an Ag nanofilm at 150 °C.


Author(s):  
S. Hiza ◽  
Y. Shirayanagi ◽  
Y. Takiguchi ◽  
K. Nishimura ◽  
T. Matsumae ◽  
...  

2021 ◽  
Author(s):  
Ting Liang ◽  
Wangwang Li ◽  
Cheng Lei ◽  
Yongwei Li ◽  
Zhiqiang Li ◽  
...  

AbstractThis paper presents an all-SiC fiber-optic Fabry-Perot (FP) pressure sensor based on the hydrophilic direct bonding technology for the applications in the harsh environment. The operating principle, fabrication, interface characteristics, and pressure response test of the proposed all-SiC pressure sensor are discussed. The FP cavity is formed by hermetically direct bonding of two-layer SiC wafers, including a thinned SiC diaphragm and a SiC wafer with an etched cavity. White light interference is used for the detection and demodulation of the sensor pressure signals. Experimental results demonstrate the sensing capabilities for the pressure range up to 800 kPa. The all-SiC structure without any intermediate layer can avoid the sensor failure caused by the thermal expansion coefficient mismatch and therefore has a great potential for pressure measurement in high temperature environments.


Chemosphere ◽  
2021 ◽  
pp. 132436
Author(s):  
Haoran Ye ◽  
Yang Wang ◽  
Qinghan Yu ◽  
Shengbo Ge ◽  
Wei Fan ◽  
...  

2021 ◽  
Vol 11 (19) ◽  
pp. 9012
Author(s):  
Mengru Jiao ◽  
Minghao Wang ◽  
Ye Fan ◽  
Bangbang Guo ◽  
Bowen Ji ◽  
...  

In this work, a MEMS piezoresistive micro pressure sensor (1.5 × 1.5 × 0.82 mm) is designed and fabricated with SOI-based micromachining technology and assembled using anodic bonding technology. In order to optimize the linearity and sensitivity over a wide effective pressure range (0–5 MPa) and temperature range (25–125 °C), the diaphragm thickness and the insulation of piezoresistors are precisely controlled by an optimized micromachining process. The consistency of the four piezoresistors is greatly improved by optimizing the structure of the ohmic contact pads. Furthermore, the probability of piezoresistive breakdown during anodic bonding is greatly reduced by conducting the top and bottom silicon of the SOI. At room temperature, the pressure sensor with 40 µm diaphragm demonstrates reliable linearity (0.48% F.S.) and sensitivity (33.04 mV/MPa) over a wide pressure range of 0–5.0 MPa. In addition, a polyimide protection layer is fabricated on the top surface of the sensor to prevent it from corrosion by a moist marine environment. To overcome the linearity drift due to temperature variation in practice, a digital temperature compensation system is developed for the pressure sensor, which shows a maximum error of 0.43% F.S. in a temperature range of 25–125 °C.


2021 ◽  
Author(s):  
Zhang Peng ◽  
Chengyu Yu ◽  
Kai Cen ◽  
Jie Pu ◽  
Pengcheng Xia ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document