Room Temperature Growth of Silica Nanowires on Top of Ultrathin Si Nanowires Synthesized with Sn‐Cu Bimetallic Seeds

AbstractA study of the room-temperature growth of ultrathin Ti films (up to 7 ML) on clean and atomically flat Si(111)- (7×7) surfaces using Auger electron spectroscopy (AES) and low energy electron diffraction (LEED) is presented. The variations in the Auger signal due to Si L2.3VV with binding energy of 92 eV are used to model the growth morphology of this system. These measurements indicate the growth of an initial disordered and continuous Ti film of up to 1.6 ML in thickness, where the LEED pattern completely disappears and the Si Auger signal is strongly attenuated. As more Ti is deposited, this is followed by the disintegration of the continuous film and the formation of an intermixed Ti/Si film. This is evidenced by a change in the slope of the Auger signal time (AST) plot, and the reappearance of the LEED pattern. The modification in the overlayer composition for films thicker than 1.6 ML is confirmed by a change in the Si L2.3VV Auger peak that resembles the peak shape due to TiSi2.

Download Full-text

Room-Temperature Growth of Co(OH)2 Nanosheets on Nanobelt-like Cu(OH)2 Arrays for a Binder-Free High-Performance All-Solid-State Supercapacitor

ACS Applied Energy Materials ◽

10.1021/acsaem.1c02398 ◽

2021 ◽

Author(s):

Biraj Kanta Satpathy ◽

Satyaroop Patnaik ◽

Debabrata Pradhan

Keyword(s):

Solid State ◽

High Performance ◽

Room Temperature ◽

Temperature Growth ◽

Binder Free

Download Full-text

Low-Energy Ion Irradiated Silicon Nanowires: Anomalous Plastic Deformation

Journal of Nuclear Engineering and Radiation Science ◽

10.1115/1.4038336 ◽

2018 ◽

Vol 4 (2) ◽

Author(s):

Chu Rainer Kwang-Hua

Keyword(s):

Plastic Deformation ◽

Silicon Nanowires ◽

Room Temperature ◽

Transition State Theory ◽

State Theory ◽

Si Nanowires ◽

Temperature Dependent ◽

Temperature Dependent Viscosity ◽

Si Nanowire ◽

Dependent Viscosity

We adopted the verified transition state theory, which originates from the quantum chemistry approach to explain the anomalous plastic flow or plastic deformation for Si nanowires irradiated with 100 keV (at room temperature regime) Ar+ ions as well as the observed amorphization along the Si nanowire (Johannes, et al. 2015, “Anomalous Plastic Deformation and Sputtering of Ion Irradiated Silicon Nanowires,” Nano Lett., 15, pp. 3800–3807). We shall illustrate some formulations which can help us calculate the temperature-dependent viscosity of flowing Si in nanodomains.

Download Full-text

Room-temperature growth of submonolayers of silicon on Si(001) studied with scanning tunneling microscopy

Physical Review B ◽

10.1103/physrevb.55.4723 ◽

1997 ◽

Vol 55 (7) ◽

pp. 4723-4730 ◽

Cited By ~ 45

Author(s):

J. van Wingerden ◽

A. van Dam ◽

M. J. Haye ◽

P. M. L. O. Scholte ◽

F. Tuinstra

Keyword(s):

Scanning Tunneling Microscopy ◽

Room Temperature ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Temperature Growth

Download Full-text

Facile room-temperature growth of nanostructured CuBi2O4 for selective electrochemical reforming and photoelectrochemical hydrogen evolution reactions

Sustainable Energy & Fuels ◽

10.1039/c9se00558g ◽

2020 ◽

Vol 4 (2) ◽

pp. 625-632 ◽

Cited By ~ 3

Author(s):

Chia-Yu Lin ◽

Shao-Yu Lin ◽

Ming-Chun Tsai ◽

Cheng-Hsien Wu

Keyword(s):

Hydrogen Evolution ◽

Chemical Bath Deposition ◽

Room Temperature ◽

Hydrogen Generation ◽

Temperature Growth ◽

Hydrogen Evolution Reactions ◽

Seed Mediated

Facile, room-temperature, and surfactant-free seed-mediated chemical bath deposition was developed to directly grow nanostructured CuBi2O4 with promising properties towards electro-reforming of glucose and PEC hydrogen generation.

Download Full-text