Calculation of Surface Self-Diffusion Coefficients from AES Data on Decay of Thin Metal Films

We propose a simple method for calculation of surface self-diffusion coefficients using kinetic data on the decay of thin films – void growth and transformation of the island shape to the equilibrium. Calculations are made taking into account equilibrium wetting angle of the film on a substrate. The kinetic data on the decay of Pd thin films on sapphire and silica substrates were obtained using Auger electron spectroscopy. By in situ monitoring the intensity of the Auger signal from the film, three different stages of the decay could be distinguished. The surface self-diffusion coefficients were calculated for the temperature range 583 – 823 K. The values of the surface diffusion coefficients and the activation energies are discussed compared to those obtained by other methods.

Initial Stages of InAs Quantum Dots Evolution in GaAs/AlAs Matrixes

ABSTRACTWe have studied the first phases of post-growth evolution of InAs quantum dots (QDs) using in-situ Auger electron spectroscopy in conjunction with Reflection High Energy Electron Diffraction (RHEED). Direct evidence for InAs intermixing with about 6ML (monolayers) of the matrix material is found from Auger signal behavior during MBE overgrowth of InAs nanostructures. Re-establishment of 2D growth mode by overgrowth with GaAs or AlAs was monitored in single-layer and multi-layer QD structures using RHEED. Decay process of InAs QDs on the surface is found to have activation energy of about 1.1 eV that corresponds to In intermixing with the matrix rather than evaporation from the surface.

An ultrahigh-vacuum chamber for surface X-ray diffraction

An ultrahigh-vacuum environmental chamber for surface X-ray diffraction on Station 9.4 at the Synchrotron Radiation Source, Daresbury Laboratory, is described. Film growth can be monitored by simultaneously recording the Auger signal and the X-ray intensity at a particular point in reciprocal space. Such in situ measurements are essential for understanding the dynamic processes that occur during adsorption. An example is given in which the specularly reflected X-ray signal is correlated with Auger plots, during growth of Tl on Cu(001). In addition, the diffractometer and chamber combination allow large reconstructions to be investigated as shown by the in-plane structural analysis of the c(4×4) InSb surface. A study of the layer structure of Cr on Ag(001), in which an extended out-of-plane detector assembly was used, is also presented.

DIRECTIONAL AUGER ELECTRON SPECTROSCOPY — PHYSICAL FOUNDATIONS AND APPLICATIONS

Experimental data about the dependence of the Auger signal from crystalline samples on the primary beam direction are presented and discussed. It is shown that, for Auger electrons and elastically and inelastically backscattered electrons, maxima of the signal in its dependence on the polar and azimuth angles of the primary beam (in polar and azimuth profiles, respectively) appear when the primary beam is parallel either to one of the close-packed rows of atoms or to one of the densely packed atomic planes in the sample. This indicates that the diffraction of the primary electron beam is responsible for the dependence mentioned above. Mechanisms proposed for simple explanation of this dependence (channeling and forward focusing of primary electrons) are presented and results of their application are discussed. It is shown that both those mechanisms play an important role in the creation of the Auger signal contrast. The possibilities and limitations of the application of polar and azimuth Auger emission profiles in the determination of the surface layer crystalline structure (directional Auger electron spectroscopy — DAES) are presented and discussed. It is shown that the thickness of the investigated surface layer can be decreased up to a few monolayers. Results obtained with DAES are similar to those provided by X-ray photoelectron diffraction (XPD) and Auger electron diffraction (AED), but the DAES experimental equipment is simple and inexpensive and measurements are fast. Finally, experimental systems for DAES are described and examples of DAES applications are presented.

The Growth Of Thin Ti Films on Si(111)-(7×7) Surfaces

A study of the room-temperature growth of ultrathin Ti films (up to 7 ML) on clean and atomically flat Si(111)- (7×7) surfaces using Auger electron spectroscopy (AES) and low energy electron diffraction (LEED) is presented. The variations in the Auger signal due to Si L2.3VV with binding energy of 92 eV are used to model the growth morphology of this system. These measurements indicate the growth of an initial disordered and continuous Ti film of up to 1.6 ML in thickness, where the LEED pattern completely disappears and the Si Auger signal is strongly attenuated. As more Ti is deposited, this is followed by the disintegration of the continuous film and the formation of an intermixed Ti/Si film. This is evidenced by a change in the slope of the Auger signal time (AST) plot, and the reappearance of the LEED pattern. The modification in the overlayer composition for films thicker than 1.6 ML is confirmed by a change in the Si L2.3VV Auger peak that resembles the peak shape due to TiSi2.

The Growth of Ni Overlayers on Au(100) Buffers Deposited on GaAs(100) and MgO(100) Substrates.

ABSTRACTHigh quality single-crystal Au(100) buffers have been grown on GaAs(100) or MgO(100) substrates via a thin bcc Fe(100) nucleation layer. Using RHEED, LEED and Auger spectroscopy the growth of Ni overlayers at room temperature was observed to follow an epitaxial layer-by-layer mode for 2 monolayers, after which islanding occured. Detailed analysis of the Auger signal reveals that atomic mixing appears within the first completed layer. Grazing incidence diffraction has been used to investigate the structure of 5–10 nm films. A mixture of (100) and (110) grains have been characterized; the latter orientation shows a large number of stacking faults along the [111] direction in agreement with the Au[001] direction.