Structure and properties of silicon dioxide thermal films. II. 110 nm thick SiO2 films

In this work, the preparation of colloidal systems with microcrystalline cellulose as a gelling agent and silica powder as a filler was considered. By mechanochemical and ultrasonic treatment of a filler made of silicon dioxide and a colloidal base, varying the constituent ingredients, one can purposefully influence the structure of the system and regulate the properties of the resulting compositions. It is shown that the introduction of a filler made of highly dispersed silicon dioxide into a gel system based on cellulose, modified by ultrasonic treatment (UST) with acid additives, provides both acceleration of the gelation process and stabilization of the state of the obtained colloidal composition. As a result of UST, a nanostructured colloidal homogeneous system is formed.

Download Full-text

Low Temperature Nitridatio of SiO2 Films using a Catalytic-CVD System

MRS Proceedings ◽

10.1557/proc-611-c4.5.1 ◽

2000 ◽

Vol 611 ◽

Author(s):

Akira Izumi ◽

Hidekazu Sato ◽

Hideki Matsumura

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Photoelectron Spectroscopy ◽

Chemical Vapor ◽

Catalytic Decomposition ◽

Catalytic Chemical Vapor Deposition ◽

Sio2 Films ◽

X Ray

ABSTRACTThis paper reports a procedure for low-temperature nitridation of silicon dioxide (SiO2) surfaces using species produced by catalytic decomposition of NH3 on heated tungsten in catalytic chemical vapor deposition (Cat-CVD) system. The surface of SiO2/Si(100) was nitrided at temperatures as low as 200°C. X-ray photoelectron spectroscopy measurements revealed that incorporated N atoms are bound to Si atoms and O atoms and located top-surface of SiO2.

Download Full-text

Effect of sputtering pressure on the structure and properties of SiO2 films prepared by magnetron sputtering

Micro & Nano Letters ◽

10.1049/mnl.2020.0222 ◽

2020 ◽

Vol 15 (12) ◽

pp. 872-876

Author(s):

Leran Zhao ◽

Changjiang Zhao ◽

Juncheng Liu ◽

Zhigang Liu ◽

Yan Chen

Keyword(s):

Magnetron Sputtering ◽

Structure And Properties ◽

Sio2 Films ◽

Sputtering Pressure

Download Full-text

Effect of nano silicon dioxide on the structure and properties of FeCl 3 ‐doped polyvinyl alcohol photopolymer film

Journal of Applied Polymer Science ◽

10.1002/app.47702 ◽

2019 ◽

Vol 136 (26) ◽

pp. 47702

Author(s):

Runping Xue ◽

Jianzhao Mao ◽

Hong Zhao ◽

Chen Yang ◽

Huihui Gao ◽

...

Keyword(s):

Polyvinyl Alcohol ◽

Silicon Dioxide ◽

Structure And Properties ◽

Nano Silicon

Download Full-text

The Properties of Hydrostatically Strained Ge and Si Nanocrystals in Silicon Dioxide Matrix

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.108-109.39 ◽

2005 ◽

Vol 108-109 ◽

pp. 39-44

Author(s):

Ida E. Tyschenko ◽

A.B. Talochkin ◽

E.N. Vandyshev ◽

A.G. Cherkov ◽

Andrzej Misiuk

Keyword(s):

Hydrostatic Pressure ◽

Silicon Dioxide ◽

Radiative Recombination ◽

Energy Gap ◽

Photoluminescence Spectra ◽

Strained Si ◽

Sio2 Films ◽

Si Nanocrystals ◽

Silicon Dioxide Matrix ◽

Ge Nanocrystals

The properties of Si and Ge nanocrystals with uniformly strained Si-Si and Ge-Ge bonds have been studied. The strained Si and Ge nanocrystals were produced by the implantation of Ge+ or Si+ ions in thermally grown SiO2 films subsequently annealed under hydrostatic pressure ranging from 1 bar to 12 kbar. Correlation between the formation of the hydrostatically strained nanocrystals and the features of the photoluminescence spectra has been observed. The obtained results are discussed in terms of broadening energy gap between the levels of electron states of the hydrostatically strained nanocrystals. This effect brings about direct radiative recombination.

Download Full-text

Theoretical Analysis of Young’s Modulus and Dielectric Constant for Low-k Porous Silicon Dioxide Films

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.353-358.2920 ◽

2007 ◽

Vol 353-358 ◽

pp. 2920-2923

Author(s):

Ke Jia Li ◽

Xia Xiao ◽

Yu Feng Jin

Keyword(s):

Dielectric Constant ◽

Porous Silicon ◽

Silicon Dioxide ◽

Young’S Modulus ◽

Young's Modulus ◽

Critical Parameters ◽

Sio2 Films ◽

Silicon Dioxide Films ◽

Porous Sio2 ◽

Porous Silicon Dioxide

Porous silicon dioxide films featuring low dielectric constant are of great scientific and commercial interest because of their outstanding potential for application to microelectronic interconnect. However, some reliability problems arise in porous SiO2 films due to their poor mechanical performance. Therefore, it is very important to understand the mechanical and electrical properties of porous SiO2 films. New 2-D models with circle pores and 3-D models with cubic pores are proposed in this work. Simulated results of porous SiO2 structures in the case of periodic and random arrangement, which are implemented through ANSYS, are also provided. Critical parameters such as Young’s modulus E and dielectric constant k of porous films are investigated. Calculation results show that dielectric constant reaches as low as 2.5 when porosity of films is about 40%, while E keeps over 3 GPa if porosity remains in the range from 30% to 40%.

Download Full-text