Modeling Process-Dependent Thermal Silicon Dioxide (SiO2) Films on Silicon

1993 ◽  
pp. 31-41 ◽  
Author(s):  
H. F. Wei ◽  
A. K. Henning ◽  
J. Slinkman ◽  
J. L. Rogers
Keyword(s):  
Silicon Dioxide ◽  
Sio2 Films ◽  
Modeling Process

Low Temperature Nitridatio of SiO2 Films using a Catalytic-CVD System

2000 ◽  
Vol 611 ◽  
Author(s):  
Akira Izumi ◽  
Hidekazu Sato ◽  
Hideki Matsumura
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Catalytic Decomposition ◽  
Catalytic Chemical Vapor Deposition ◽  
Sio2 Films ◽  
X Ray

ABSTRACTThis paper reports a procedure for low-temperature nitridation of silicon dioxide (SiO2) surfaces using species produced by catalytic decomposition of NH3 on heated tungsten in catalytic chemical vapor deposition (Cat-CVD) system. The surface of SiO2/Si(100) was nitrided at temperatures as low as 200°C. X-ray photoelectron spectroscopy measurements revealed that incorporated N atoms are bound to Si atoms and O atoms and located top-surface of SiO2.

Structure and properties of silicon dioxide thermal films I. SiO2 films of up to 50 nm thickness

1984 ◽  
Vol 86 (1) ◽  
pp. 93-100 ◽  
Author(s):  
N. V. Rumak ◽  
V. V. Khatko ◽  
V. N. Plotnikov
Keyword(s):  
Silicon Dioxide ◽  
Structure And Properties ◽  
Sio2 Films ◽  
Thermal Films

The Properties of Hydrostatically Strained Ge and Si Nanocrystals in Silicon Dioxide Matrix

2005 ◽  
Vol 108-109 ◽  
pp. 39-44
Author(s):  
Ida E. Tyschenko ◽  
A.B. Talochkin ◽  
E.N. Vandyshev ◽  
A.G. Cherkov ◽  
Andrzej Misiuk
Keyword(s):  
Hydrostatic Pressure ◽  
Silicon Dioxide ◽  
Radiative Recombination ◽  
Energy Gap ◽  
Photoluminescence Spectra ◽  
Strained Si ◽  
Sio2 Films ◽  
Si Nanocrystals ◽  
Silicon Dioxide Matrix ◽  
Ge Nanocrystals

The properties of Si and Ge nanocrystals with uniformly strained Si-Si and Ge-Ge bonds have been studied. The strained Si and Ge nanocrystals were produced by the implantation of Ge+ or Si+ ions in thermally grown SiO2 films subsequently annealed under hydrostatic pressure ranging from 1 bar to 12 kbar. Correlation between the formation of the hydrostatically strained nanocrystals and the features of the photoluminescence spectra has been observed. The obtained results are discussed in terms of broadening energy gap between the levels of electron states of the hydrostatically strained nanocrystals. This effect brings about direct radiative recombination.

Theoretical Analysis of Young’s Modulus and Dielectric Constant for Low-k Porous Silicon Dioxide Films

2007 ◽  
Vol 353-358 ◽  
pp. 2920-2923
Author(s):  
Ke Jia Li ◽  
Xia Xiao ◽  
Yu Feng Jin
Keyword(s):  
Dielectric Constant ◽  
Porous Silicon ◽  
Silicon Dioxide ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Critical Parameters ◽  
Sio2 Films ◽  
Silicon Dioxide Films ◽  
Porous Sio2 ◽  
Porous Silicon Dioxide

Porous silicon dioxide films featuring low dielectric constant are of great scientific and commercial interest because of their outstanding potential for application to microelectronic interconnect. However, some reliability problems arise in porous SiO2 films due to their poor mechanical performance. Therefore, it is very important to understand the mechanical and electrical properties of porous SiO2 films. New 2-D models with circle pores and 3-D models with cubic pores are proposed in this work. Simulated results of porous SiO2 structures in the case of periodic and random arrangement, which are implemented through ANSYS, are also provided. Critical parameters such as Young’s modulus E and dielectric constant k of porous films are investigated. Calculation results show that dielectric constant reaches as low as 2.5 when porosity of films is about 40%, while E keeps over 3 GPa if porosity remains in the range from 30% to 40%.

Electrical and Structural Properties of Catalytic-Nitrided SiO2 Films

2001 ◽  
Vol 670 ◽  
Author(s):  
Akira Izumi ◽  
Hidekazu Sato ◽  
Hideki Matsumura
Keyword(s):  
Electrical Properties ◽  
Silicon Dioxide ◽  
Structural Properties ◽  
Sio2 Films ◽  
Structural And Electrical Properties

ABSTRACTThis paper reports structural and electrical properties of catalytic-nitrided silicon dioxide (SiO2) films. The surface of SiO2/Si(100) was nitrided at temperatures below 573 K. It was found that the incorporated N atoms are bound to Si atoms and O atoms and located on the top-surface of SiO2. Catalytic-nitrided SiO2 films have small amounts of Si-OH bonds and adequate resistance to boron (B) penetration.

Buckling Control of Silicon Dioxide Diaphragms for Sensitivity Enhancement of Piezoelectric Ultrasonic Microsensors

2011 ◽  
Vol 131 (7) ◽  
pp. 235-239 ◽  
Author(s):  
Kaoru Yamashita ◽  
Tomoya Yoshizaki ◽  
Minoru Noda ◽  
Masanori Okuyama
Keyword(s):  
Silicon Dioxide ◽  
Sensitivity Enhancement

Dosimetry for middle level radiation using ESR spectroscopy of silicon dioxide reagents

2003 ◽  
Vol 32 (5) ◽  
pp. 211-218
Author(s):  
Isamu SHINNO ◽  
Jianming XU ◽  
Toshiyuki ISOBE
Keyword(s):  
Silicon Dioxide ◽  
Esr Spectroscopy ◽  
Middle Level
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