Mechanism of misfit dislocation network formation in the heteroepitaxial system GeGaAs (001)

It has been reported by Lally et. al. [1] that precipitates of hematite (Fe2O3, space group R3c) in a matrix of ilmenite (FeTiO3, space group R3) are lens shaped and flattened along the [0001]-direction. The coherency across the interface is lost by the introduction of a misfit dislocation network, which minimizes the strain due to the deviation in lattice parameters between the two phases [2]. The purpose of this paper is to present a new analysis of this network.

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STEM beam channeling in BaSnO3/LaAlO3 perovskite bilayers and visualization of 2D misfit dislocation network

Ultramicroscopy ◽

10.1016/j.ultramic.2019.112863 ◽

2020 ◽

Vol 208 ◽

pp. 112863

Author(s):

Hwanhui Yun ◽

Abhinav Prakash ◽

Bharat Jalan ◽

Jong Seok Jeong ◽

K. Andre Mkhoyan

Keyword(s):

Misfit Dislocation ◽

Dislocation Network

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Influence of a buried misfit dislocation network on the pyramid-to-dome transition size of Ge self-assembled quantum dots on Si(001)

Journal of Crystal Growth ◽

10.1016/s0022-0248(02)01980-2 ◽

2003 ◽

Vol 247 (3-4) ◽

pp. 251-254 ◽

Cited By ~ 14

Author(s):

H.J. Kim ◽

J.Y. Chang ◽

Y.H. Xie

Keyword(s):

Quantum Dots ◽

Misfit Dislocation ◽

Dislocation Network ◽

Self Assembled

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Strain Relaxation Mechanisms in He+-Implanted and Annealed Si1−xGex Layers on Si(001) Substrates

MRS Proceedings ◽

10.1557/proc-686-a1.6 ◽

2001 ◽

Vol 686 ◽

Author(s):

S.H. Christiansen ◽

P.M. Mooney ◽

J.O. Chu ◽

A. Grill

Keyword(s):

Misfit Dislocation ◽

Strain Relaxation ◽

Three Dimensional ◽

Dislocation Network ◽

Misfit Dislocations ◽

Dislocation Loops ◽

X Ray Diffraction ◽

Si Substrate ◽

Transmission Electron ◽

Microscopy Techniques

AbstractStrain relaxation in He+-implanted and annealed Si(001)/Si1−xGex heterostructures was investigated using transmission electron microscopy techniques and x-ray diffraction. Depending on the implant conditions, bubbles and/or platelets form below the Si/Si1−xGex interface upon annealing and act as nucleation sources for dislocation loops. The dislocation loops extend to the interface and form a misfit dislocation network there, resulting in relaxation of 30-80% of the strain in layers as thin as 100-300 nm. When bubbles form close to the interface, dislocations nucleate by a climb loop mechanism. When smaller bubbles form deeper in the Si substrate an irregular three-dimensional dislocation network forms below the interface resulting in an irregular misfit dislocation network at the interface. When platelets form deeper in the Si substrate, prismatic punching of dislocation loops is observed and dislocation reactions of misfit dislocations at the interface result in Lomer dislocation formation.

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Dislocation network formation and coherency loss around gamma- prime precipitates in a nickel- base superalloy

Metallurgical Transactions A ◽

10.1007/bf02647723 ◽

1988 ◽

Vol 19 (12) ◽

pp. 2965-2973 ◽

Cited By ~ 57

Author(s):

A. K. Singh ◽

N. Louat ◽

K. Sadananda

Keyword(s):

Network Formation ◽

Dislocation Network ◽

Nickel Base Superalloy ◽

Gamma Prime ◽

Nickel Base ◽

Coherency Loss ◽

Base Superalloy

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Novel Glide Planes in Epitaxially Grown Semiconductors

MRS Proceedings ◽

10.1557/proc-280-437 ◽

1992 ◽

Vol 280 ◽

Author(s):

M. Albrecht ◽

H. P. Strunk ◽

P. O. Hansson ◽

E. Bauser

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Misfit Dislocation ◽

Frictional Force ◽

Equilibrium Analysis ◽

Dislocation Network ◽

Mechanical Equilibrium ◽

Heteroepitaxial Growth ◽

Transmission Electron ◽

Peierls Barrier

ABSTRACTThe accommodation of misfit stresses during heteroepitaxial growth of Ge0.85Si0.15 on Si(110) from In solution is studied by transmission electron microscopy. The regular misfit dislocation network forms at the interface and can be explained by glide of dislocations in a secondary a/2<110>{311} glide system. The occurrence of this secondary glide system is analyzed in terms of a mechanical equilibrium analysis that includes a frictional force due to a static Peierls barrier.

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Mechanisms of Dislocation Network Formation in Si(001) Hydrophilic Bonded Wafers

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.178-179.253 ◽

2011 ◽

Vol 178-179 ◽

pp. 253-258 ◽

Cited By ~ 4

Author(s):

Vladimir Vdovin ◽

Oleg Vyvenko ◽

Evgenii Ubyivovk ◽

Oleg Kononchuk

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Network Formation ◽

Dislocation Network ◽

Dislocation Generation ◽

Screw Dislocations ◽

Transmission Electron ◽

Geometrical Features

Structures of Si(001) hydrofillic bonded wafers have been studied by transmission electron microscopy. Model of three-fold nods generation during interaction of intersecting mixed and screw dislocations has been suggested and applied to analyze geometrical features of dislocation networks. Possible mechanisms of dislocation generation at the interface between Si bonded wafers are discussed.

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