Strain Relaxation Mechanisms in He+-Implanted and Annealed Si1−xGex Layers on Si(001) Substrates

2001 ◽  
Vol 686 ◽  
Author(s):  
S.H. Christiansen ◽  
P.M. Mooney ◽  
J.O. Chu ◽  
A. Grill
Keyword(s):  
Misfit Dislocation ◽  
Strain Relaxation ◽  
Three Dimensional ◽  
Dislocation Network ◽  
Misfit Dislocations ◽  
Dislocation Loops ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Transmission Electron ◽  
Microscopy Techniques

AbstractStrain relaxation in He+-implanted and annealed Si(001)/Si1−xGex heterostructures was investigated using transmission electron microscopy techniques and x-ray diffraction. Depending on the implant conditions, bubbles and/or platelets form below the Si/Si1−xGex interface upon annealing and act as nucleation sources for dislocation loops. The dislocation loops extend to the interface and form a misfit dislocation network there, resulting in relaxation of 30-80% of the strain in layers as thin as 100-300 nm. When bubbles form close to the interface, dislocations nucleate by a climb loop mechanism. When smaller bubbles form deeper in the Si substrate an irregular three-dimensional dislocation network forms below the interface resulting in an irregular misfit dislocation network at the interface. When platelets form deeper in the Si substrate, prismatic punching of dislocation loops is observed and dislocation reactions of misfit dislocations at the interface result in Lomer dislocation formation.

Transition From Inclined to In-Plane 60° Misfit Dislocations in a Diffuse Interface

1993 ◽  
Vol 319 ◽  
Author(s):  
X. J. Ning ◽  
P. Pirouz
Keyword(s):  
Strain Relaxation ◽  
Classical Model ◽  
Diffuse Interface ◽  
Misfit Dislocations ◽  
Dislocation Loops ◽  
Boron Diffusion ◽  
Plan View ◽  
Transmission Electron ◽  
Mechanisms Of Formation ◽  
Film Substrate

AbstractDespite tremendous activity during the last few decades in the study of strain relaxation in thin films grown on substrates of a dissimilar material, there are still a number of problems which are unresolved. One of these is the nature of misfit dislocations forming at the film/substrate interface: depending on the misfit, the dislocations constituting the interfacial network have predominantly either in-plane or inclined Burgers vectors. While, the mechanisms of formation of misfit dislocations with inclined Burgers vectors are reasonably well understood, this is not the case for in-plane misfit dislocations whose formation mechanism is still controversial. In this paper, misfit dislocations generated to relax the strains caused by diffusion of boron into silicon have been investigated by plan-view and crosssectional transmission electron microscopy. The study of different stages of boron diffusion shows that, as in the classical model of Matthews, dislocation loops are initially generated at the epilayer surface. Subsequently the threading segments expand laterally and lay down a segment of misfit dislocation at the diffuse interface. The Burgers vector of the dislocation loop is inclined with respect to the interface and thus the initial misfit dislocations are not very efficient. However, as the diffusion proceeds, non-parallel dislocations interact and give rise to product segments that have parallel Burgers vectors. Based on the observations, a model is presented to elucidate the details of these interactions and the formation of more efficient misfit dislocations from the less-efficient inclined ones.

Optical Properties and Defect Structure of MOVPE InGaN Films

1999 ◽  
Vol 588 ◽  
Author(s):  
A. Cremades ◽  
M. Albrecht ◽  
J. M. Ulloa ◽  
J. Piqueras ◽  
H. P. Strunk ◽  
...  
Keyword(s):  
Optical Properties ◽  
Strain Relaxation ◽  
Misfit Dislocations ◽  
Nonradiative Recombination ◽  
X Ray Diffraction ◽  
Band Bending ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Piezoelectric Fields

AbstractA series of 100 nm thick InGaN films with In content up to 14% has been grown by MOVPE on SiC substrates. Optical characterization was carried out by means of reflectance spectrometry, photoluminescence and cathodoluminescence. Optical properties of the samples have been correlated with the microstructural properties measured by atomic force microscopy, transmission electron microscopy and X-ray diffraction data. Results indicate a dependence of the optical properties on the In content in the sample, as well as on the residual stress in the films induced by Indium incorporation. Part of the strain is reduced elastically by formation of pinholes which reach the InGaN/GaN interface, where first misfit dislocations are observed to form. Our results show that luminescence is directly correlated with the strain distribution in the layers. Pinholes are observed to act as nonradiative recombination sites for carriers, while strain relaxation around pinholes may enhance luminescence emission. We discuss the influence of strain with respect to In incorporation, the appearance of piezoelectric fields and effects due to strain induced band bending.

Strain Relaxation in Heteroepitaxial Si1-xGex Films via Surface Roughening Processes

1995 ◽  
Vol 399 ◽  
Author(s):  
Cengiz S. Ozkan ◽  
William D. Nix ◽  
Huajian Gao
Keyword(s):  
Strain Relaxation ◽  
Depth Profiling ◽  
Surface Roughening ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Transmission Electron ◽  
Anisotropic Elastic

ABSTRACTSurface roughening associated with strain relaxation of Si1-xGex films grown epitaxially on (100) Si substrates has been investigated using transmission electron microscopy, atomic force microscopy and x-ray diffraction. Epitaxial films 100 Å in thickness and containing 18% Ge, which are subcritical with respect to the formation of misfit dislocations, show strain relaxation through surface roughening on annealing at 700 °C. Enhanced surface grooves aligned along <100> directions are observed in films annealed at 850 °C. Strain relaxation as measured by x-ray diffraction is significantly greater at the higher temperature. Prolonged anneals at 850 °C also result in islanding. The surface roughening processes have also been studied in subcritical films with 15% Ge at 900 °C. These films also show enhanced grooving aligned along <100> directions. These observations are consistent with an anisotropic elastic analysis which indicates that grooving should occur preferentially along <100> directions. Intermixing effects in these samples have also been investigated through depth profiling using Auger Electron Spectroscopy. In addition to the above subcritical films, other films with 18% and 22% Ge and supercritical thicknesses have also been studied. For these films, surface grooving is observed along <110> directions, which suggests that these grooves are related to the formation of misfit dislocation networks. The role of these surface roughening processes in the nucleation of dislocations has also been explored.

Misfit Dislocations in the Ilmenite (FeTiO3)-Hematite (Fe2O3) System

1980 ◽  
Vol 38 ◽  
pp. 212-213 ◽  
Author(s):  
K.P.D. Lagerlöf ◽  
A.H. Heuer ◽  
T.E. Mitchell
Keyword(s):  
Misfit Dislocation ◽  
Lattice Parameters ◽  
Dislocation Network ◽  
Misfit Dislocations ◽  
Space Group ◽  
Two Phases ◽  
Hematite Fe2o3

It has been reported by Lally et. al. [1] that precipitates of hematite (Fe2O3, space group R3c) in a matrix of ilmenite (FeTiO3, space group R3) are lens shaped and flattened along the [0001]-direction. The coherency across the interface is lost by the introduction of a misfit dislocation network, which minimizes the strain due to the deviation in lattice parameters between the two phases [2]. The purpose of this paper is to present a new analysis of this network.

scholarly journals Synthesis of Three-Dimensional Fe3O4/Graphene Aerogels for the Removal of Arsenic Ions from Water

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
Yan Ye ◽  
Da Yin ◽  
Bin Wang ◽  
Qingwen Zhang
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
3D Structure ◽  
Three Dimensional ◽  
X Ray Diffraction ◽  
X Ray ◽  
Graphene Aerogels ◽  
Transmission Electron ◽  
Potential Applications ◽  
Removal Of Arsenic

We report the synthesis of three-dimensional Fe3O4/graphene aerogels (GAs) and their application for the removal of arsenic (As) ions from water. The morphology and properties of Fe3O4/GAs have been characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and superconducting quantum inference device. The 3D nanostructure shows that iron oxide nanoparticles are decorated on graphene with an interconnected network structure. It is found that Fe3O4/GAs own a capacity of As(V) ions adsorption up to 40.048 mg/g due to their remarkable 3D structure and existence of magnetic Fe3O4nanoparticles for separation. The adsorption isotherm matches well with the Langmuir model and kinetic analysis suggests that the adsorption process is pseudo-second-ordered. In addition to the excellent adsorption capability, Fe3O4/GAs can be easily and effectively separated from water, indicating potential applications in water treatment.

scholarly journals Low-Zpolymer sample supports for fixed-target serial femtosecond X-ray crystallography

2015 ◽  
Vol 48 (4) ◽  
pp. 1072-1079 ◽  
Author(s):  
Geoffrey K. Feld ◽  
Michael Heymann ◽  
W. Henry Benner ◽  
Tommaso Pardini ◽  
Ching-Ju Tsai ◽  
...  
Keyword(s):  
Protective Antigen ◽  
Three Dimensional ◽  
Two Dimensional ◽  
X Ray Diffraction ◽  
Fixed Target ◽  
X Ray ◽  
X Ray Crystallography ◽  
Transmission Electron ◽  
Linac Coherent Light Source ◽  
Efficient Alternative

X-ray free-electron lasers (XFELs) offer a new avenue to the structural probing of complex materials, including biomolecules. Delivery of precious sample to the XFEL beam is a key consideration, as the sample of interest must be serially replaced after each destructive pulse. The fixed-target approach to sample delivery involves depositing samples on a thin-film support and subsequent serial introductionviaa translating stage. Some classes of biological materials, including two-dimensional protein crystals, must be introduced on fixed-target supports, as they require a flat surface to prevent sample wrinkling. A series of wafer and transmission electron microscopy (TEM)-style grid supports constructed of low-Zplastic have been custom-designed and produced. Aluminium TEM grid holders were engineered, capable of delivering up to 20 different conventional or plastic TEM grids using fixed-target stages available at the Linac Coherent Light Source (LCLS). As proof-of-principle, X-ray diffraction has been demonstrated from two-dimensional crystals of bacteriorhodopsin and three-dimensional crystals of anthrax toxin protective antigen mounted on these supports at the LCLS. The benefits and limitations of these low-Zfixed-target supports are discussed; it is the authors' belief that they represent a viable and efficient alternative to previously reported fixed-target supports for conducting diffraction studies with XFELs.

Three-dimensional X-ray diffraction imaging of process-induced dislocation loops in silicon

2011 ◽  
Vol 44 (3) ◽  
pp. 526-531 ◽  
Author(s):  
David Allen ◽  
Jochen Wittge ◽  
Jennifer Stopford ◽  
Andreas Danilewsky ◽  
Patrick McNally
Keyword(s):  
Semiconductor Industry ◽  
Three Dimensional ◽  
Crystal Defects ◽  
Three Dimensions ◽  
Dimensional Structure ◽  
Dislocation Loops ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffraction Imaging ◽  
Relationship Of

In the semiconductor industry, wafer handling introduces micro-cracks at the wafer edge and the causal relationship of these cracks to wafer breakage is a difficult task. By way of understanding the wafer breakage process, a series of nano-indents were introduced both into 20 × 20 mm (100) wafer pieces and into whole wafers as a means of introducing controlled strain. Visualization of the three-dimensional structure of crystal defects has been demonstrated. The silicon samples were then treated by various thermal anneal processes to initiate the formation of dislocation loops around the indents. This article reports the three-dimensional X-ray diffraction imaging and visualization of the structure of these dislocations. A series of X-ray section topographs of both the indents and the dislocation loops were taken at the ANKA Synchrotron, Karlsruhe, Germany. The topographs were recorded on a CCD system combined with a high-resolution scintillator crystal and were measured by repeated cycles of exposure and sample translation along a direction perpendicular to the beam. The resulting images were then rendered into three dimensions utilizing open-source three-dimensional medical tomography algorithms that show the dislocation loops formed. Furthermore this technique allows for the production of a video (avi) file showing the rotation of the rendered topographs around any defined axis. The software also has the capability of splitting the image along a segmentation line and viewing the internal structure of the strain fields.

scholarly journals Microstructure Evolution in ZrCx with Different Stoichiometries Irradiated by Four MeV Au Ions

Materials ◽  
2019 ◽  
Vol 12 (22) ◽  
pp. 3768
Author(s):  
Boxin Wei ◽  
Dong Wang ◽  
Yujin Wang ◽  
Haibin Zhang
Keyword(s):  
Radiation Damage ◽  
Microstructure Evolution ◽  
Vacancy Concentration ◽  
Ion Beam ◽  
Grazing Incidence ◽  
Dislocation Loops ◽  
Black Dot ◽  
X Ray Diffraction ◽  
Near Surface ◽  
Transmission Electron

ZrCx ceramics with different stoichiometries were irradiated under a four MeV Au ion beam in doses of 2 × 1016 ions/cm2 at room temperature, corresponding to ~130 dpa. Grazing incidence, X-ray diffraction and transmission electron microscopy were performed to study the radiation damage and microstructure evolution in ZrCx ceramics. With the decrease in C/Zr ratio, the expansion of ZrCx lattice became smaller after irradiation. Some long dislocation lines formed at the near-surface, while, in the area with the greatest damage (depth of ~400 nm), large amounts of dislocation loops formed in ZrC, ZrC0.9 and ZrC0.8. With the increase in carbon vacancy concentration, the size of the dislocation loops gradually decreased. Few dislocation loops were found in ZrC0.7 after irradiation, and only black-dot defects were found in the area with the greatest damage. For the non-stoichiometric ZrCx, with the increase of the intrinsic vacancies, the number of C interstitials caused by irradiation decreased, and the recombination barrier of C Frenkel pairs reduced. The above factors will reduce the total number of C interstitials after cascade cooling, suppressing the formation and growth of dislocation loops, which is significant for the enhancement of the tolerance of radiation damage.

Transmission electron microscopy of misfit dislocation and strain relaxation in lattice mismatched III-V heterostructures versus substrate surface treatment

2011 ◽  
Vol 1324 ◽  
Author(s):  
Y. Wang ◽  
P. Ruterana ◽  
L. Desplanque ◽  
S. El Kazzi ◽  
X. Wallart
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Surface Treatment ◽  
Substrate Surface ◽  
Strain Relaxation ◽  
Dislocation Core ◽  
Misfit Dislocations ◽  
Heteroepitaxial Growth ◽  
Transmission Electron ◽  
Growth Initiation

ABSTRACTHigh resolution transmission electron microscopy in combination with geometric phase analysis is used to investigate the interface misfit dislocations, strain relaxation, and dislocation core behavior versus the surface treatment of the GaAs for the heteroepitaxial growth of GaSb. It is pointed out that Sb-rich growth initiation promotes the formation of a high quality network of Lomer misfit dislocations that are more efficient for strain relaxation.

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