scholarly journals STEM beam channeling in BaSnO3/LaAlO3 perovskite bilayers and visualization of 2D misfit dislocation network

2020 ◽  
Vol 208 ◽  
pp. 112863
Author(s):  
Hwanhui Yun ◽  
Abhinav Prakash ◽  
Bharat Jalan ◽  
Jong Seok Jeong ◽  
K. Andre Mkhoyan
Keyword(s):  
Misfit Dislocation ◽  
Dislocation Network

Misfit Dislocations in the Ilmenite (FeTiO3)-Hematite (Fe2O3) System

1980 ◽  
Vol 38 ◽  
pp. 212-213 ◽  
Author(s):  
K.P.D. Lagerlöf ◽  
A.H. Heuer ◽  
T.E. Mitchell
Keyword(s):  
Misfit Dislocation ◽  
Lattice Parameters ◽  
Dislocation Network ◽  
Misfit Dislocations ◽  
Space Group ◽  
Two Phases ◽  
Hematite Fe2o3

It has been reported by Lally et. al. [1] that precipitates of hematite (Fe2O3, space group R3c) in a matrix of ilmenite (FeTiO3, space group R3) are lens shaped and flattened along the [0001]-direction. The coherency across the interface is lost by the introduction of a misfit dislocation network, which minimizes the strain due to the deviation in lattice parameters between the two phases [2]. The purpose of this paper is to present a new analysis of this network.

Mechanism of misfit dislocation network formation in the heteroepitaxial system GeGaAs (001)

1985 ◽  
Vol 92 (2) ◽  
pp. 379-390 ◽  
Author(s):  
V. I. Vdovin ◽  
L. A. Matveeva ◽  
G. N. Semenova ◽  
M. Ya. Skorohod ◽  
Yu. A. Tkhorik ◽  
...  
Keyword(s):  
Misfit Dislocation ◽  
Network Formation ◽  
Dislocation Network

Strain Relaxation Mechanisms in He+-Implanted and Annealed Si1−xGex Layers on Si(001) Substrates

2001 ◽  
Vol 686 ◽  
Author(s):  
S.H. Christiansen ◽  
P.M. Mooney ◽  
J.O. Chu ◽  
A. Grill
Keyword(s):  
Misfit Dislocation ◽  
Strain Relaxation ◽  
Three Dimensional ◽  
Dislocation Network ◽  
Misfit Dislocations ◽  
Dislocation Loops ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Transmission Electron ◽  
Microscopy Techniques

AbstractStrain relaxation in He+-implanted and annealed Si(001)/Si1−xGex heterostructures was investigated using transmission electron microscopy techniques and x-ray diffraction. Depending on the implant conditions, bubbles and/or platelets form below the Si/Si1−xGex interface upon annealing and act as nucleation sources for dislocation loops. The dislocation loops extend to the interface and form a misfit dislocation network there, resulting in relaxation of 30-80% of the strain in layers as thin as 100-300 nm. When bubbles form close to the interface, dislocations nucleate by a climb loop mechanism. When smaller bubbles form deeper in the Si substrate an irregular three-dimensional dislocation network forms below the interface resulting in an irregular misfit dislocation network at the interface. When platelets form deeper in the Si substrate, prismatic punching of dislocation loops is observed and dislocation reactions of misfit dislocations at the interface result in Lomer dislocation formation.

Novel Glide Planes in Epitaxially Grown Semiconductors

1992 ◽  
Vol 280 ◽  
Author(s):  
M. Albrecht ◽  
H. P. Strunk ◽  
P. O. Hansson ◽  
E. Bauser
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Misfit Dislocation ◽  
Frictional Force ◽  
Equilibrium Analysis ◽  
Dislocation Network ◽  
Mechanical Equilibrium ◽  
Heteroepitaxial Growth ◽  
Transmission Electron ◽  
Peierls Barrier

ABSTRACTThe accommodation of misfit stresses during heteroepitaxial growth of Ge0.85Si0.15 on Si(110) from In solution is studied by transmission electron microscopy. The regular misfit dislocation network forms at the interface and can be explained by glide of dislocations in a secondary a/2<110>{311} glide system. The occurrence of this secondary glide system is analyzed in terms of a mechanical equilibrium analysis that includes a frictional force due to a static Peierls barrier.

Self-organized growth of Ni nanoparticles on a cobalt-oxide thin film induced by a buried misfit dislocation network

2008 ◽  
Vol 77 (8) ◽  
Author(s):  
P. Torelli ◽  
E. A. Soares ◽  
G. Renaud ◽  
L. Gragnaniello ◽  
S. Valeri ◽  
...  
Keyword(s):  
Thin Film ◽  
Cobalt Oxide ◽  
Misfit Dislocation ◽  
Oxide Thin Film ◽  
Dislocation Network ◽  
Ni Nanoparticles ◽  
Self Organized

Cs-Corrected Scanning Transmission Electron Microscopy Investigation of Dislocation Core Configurations at a SrTiO3/MgO Heterogeneous Interface

2013 ◽  
Vol 19 (3) ◽  
pp. 706-715 ◽  
Author(s):  
Yuanyuan Zhu ◽  
Chengyu Song ◽  
Andrew M. Minor ◽  
Haiyan Wang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Misfit Dislocation ◽  
Scanning Transmission Electron Microscopy ◽  
Substrate Surface ◽  
Dislocation Core ◽  
Dislocation Network ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission

AbstractHeterostructures and interfacial defects in a 40-nm-thick SrTiO3 (STO) film grown epitaxially on a single-crystal MgO (001) were investigated using aberration-corrected scanning transmission electron microscopy and geometric phase analysis. The interface of STO/MgO was found to be of the typical domain-matching epitaxy with a misfit dislocation network having a Burgers vector of ½ aSTO ⟨100⟩. Our studies also revealed that the misfit dislocation cores at the heterogeneous interface display various local cation arrangements in terms of the combination of the extra-half inserting plane and the initial film plane. The type of the inserting plane, either the SrO or the TiO2 plane, alters with actual interfacial conditions. Contrary to previous theoretical calculations, the starting film planes were found to be dominated by the SrO layer, i.e., a SrO/MgO interface. In certain regions, the starting film planes change to the TiO2/MgO interface because of atomic steps at the MgO substrate surface. In particular, four basic misfit dislocation core configurations of the STO/MgO system have been identified and discussed in relation to the substrate surface terraces and possible interdiffusion. The interface structure of the system in reverse—MgO/STO—is also studied and presented for comparison.

scholarly journals Visualization of Misfit Dislocation Network at the BaSnO3-LaAlO3 Interface

2019 ◽  
Vol 25 (S2) ◽  
pp. 980-981
Author(s):  
Hwanhui Yun ◽  
Abhinav Prakash ◽  
Bharat Jalan ◽  
Jong Seok Jeong ◽  
K. Andre Mkhoyan
Keyword(s):  
Misfit Dislocation ◽  
Dislocation Network
Sign in / Sign up

Export Citation Format

Share Document