On the Influence of Residual Gas Pressure on the MS-Induced Anisotropy in Thin Films

1961 ◽  
Vol 1 (7) ◽  
pp. K147-K149 ◽  
Author(s):  
Z. Málek ◽  
V. Kamberský ◽  
W. Schüppel
2005 ◽  
Vol 69 (8) ◽  
pp. 671-675 ◽  
Author(s):  
Keisuke Takahashi ◽  
Shingo Masuda ◽  
You Tsukayama ◽  
Atsushi Kadowaki ◽  
Yoshihito Matsumura ◽  
...  

2021 ◽  
pp. 2100452
Author(s):  
Ethan R. Rosenberg ◽  
Kai Litzius ◽  
Justin M. Shaw ◽  
Grant A. Riley ◽  
Geoffrey S. D. Beach ◽  
...  

1994 ◽  
Vol 361 ◽  
Author(s):  
V.A. Alyoshin ◽  
E.V. Sviridov ◽  
V.I.M. Hukhortov ◽  
I.H. Zakharchenko ◽  
V.P. Dudkevich

ABSTRACTSurface and cross-section relief evolution of ferroelectric epitaxial (Ba,Sr)TiO3 films rf-sputtered on (001) HgO crystal cle-avage surface versus the oxygen worKing gas pressure P and subst-rate temperature T were studied. Specific features of both three-dimensional and two-dimensional epitaxy mechanisms corresponding to various deposition conditions were revealed. Difference between low and high P-T-value 3D epitaxy was established. The deposition of films with mirror-smooth surfaces and perfect interfaces is shown to be possible.


2004 ◽  
Vol 446 (2) ◽  
pp. 178-183 ◽  
Author(s):  
E. György ◽  
I.N. Mihailescu ◽  
M. Kompitsas ◽  
A. Giannoudakos

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