PHONON-DRAG EFFECT OF ULTRA-THIN FeSi2 AND MnSi1.7/FeSi2 FILMS

2011 ◽  
Vol 25 (22) ◽  
pp. 1829-1838 ◽  
Author(s):  
Q. R. HOU ◽  
B. F. GU ◽  
Y. B. CHEN ◽  
Y. J. HE
Keyword(s):  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Single Crystals ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Low Temperatures ◽  
Room Temperature ◽  
Phonon Drag ◽  
Drag Effect ◽  
Thermoelectric Power Factor

Phonon-drag effect usually occurs in single crystals at very low temperatures (10–200 K). Strong phonon-drag effect is observed in ultra-thin β- FeSi 2 films at around room temperature. The Seebeck coefficient of a 23 nm-thick β- FeSi 2 film can reach -1.375 mV/K at 343 K. However, the thermoelectric power factor of the film is still small, only 0.42×10-3 W/m-K2, due to its large electrical resistivity. When a 27 nm-thick MnSi 1.7 film with low electrical resistivity is grown on it, the thermoelectric power factor of the MnSi 1.7 film can reach 1.5×10-3 W/m-K2 at around room temperature. This value is larger than that of bulk MnSi 1.7 material in the same temperature range.

Synthesis and thermoelectric power factor of LSCO perovskites

2005 ◽  
Vol 886 ◽  
Author(s):  
Julio E. Rodriguez
Keyword(s):  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Room Temperature ◽  
Morphological Properties ◽  
Measured Temperature ◽  
X Ray Diffraction ◽  
Thermoelectric Power Factor ◽  
X Ray

ABSTRACTMeasurements of Seebeck coefficient, S(T) and electrical resistivity, ρ(T) on polycrystalline La2−xSrxCuO4+d(LSCO) (0<x≤0.2) samples are reported. The Seebeck coefficient is positive in whole measured temperature range (77K and 300K) and it decreases with Sr content. At room temperature S(T) changes from 400 μ/K for the samples with the lowest levels of Sr to 30 μV/K for the samples with the highest Sr levels. The behavior of S(T) fits to Heikes model, which describes the behavior of Seebeck coefficient in systems where the correlated hopping is present. With the Sr content, the electrical resistivity changes its behavior from semiconducting to metallic and it took values from 2.4 to 10−3Ωcm. From S(T) and rho(T) measurements the thermoelectric power factor, PF was obtained. The maximum values for PF were about 5 μW/K2cm in the samples where x= 0.03, which are comparable to the typical values for conventional thermoelectric semiconductors. The structural and morphological properties of the samples were studied by x-ray diffraction analysis and Scanning Electron Microscopy (SEM) respectively. The behavior of transport properties opens de possibility of considering this family of perovskite-compounds as a thermoelectric material which works below room temperature.

Enhancement of thermoelectric power factor in CrSi2 film via Si:B addition

2015 ◽  
Vol 29 (27) ◽  
pp. 1550189
Author(s):  
Q. R. Hou ◽  
B. F. Gu ◽  
Y. B. Chen
Keyword(s):  
Electrical Resistivity ◽  
Thermoelectric Power ◽  
Raman Spectra ◽  
Power Factor ◽  
Low Temperatures ◽  
X Ray Diffraction ◽  
Thermoelectric Power Factor ◽  
X Ray ◽  
Large Enhancement ◽  
Diffraction Patterns

In this paper, we report a large enhancement in the thermoelectric power factor in CrSi2 film via Si:B (1 at.% B content) addition. The Si:B-enriched CrSi2 films are prepared by co-sputtering CrSi2 and heavily B-doped Si targets. Both X-ray diffraction patterns and Raman spectra confirm the formation of the crystalline phase CrSi2. Raman spectra also indicate the crystallization of the added Si:B. With the addition of Si:B, the electrical resistivity [Formula: see text] decreases especially at low temperatures while the Seebeck coefficient [Formula: see text] increases above 533 K. As a result, the thermoelectric power factor, [Formula: see text], is greatly enhanced and can reach [Formula: see text] at 583 K, which is much larger than that of the pure CrSi2 film.

THERMOELECTRIC EFFECT OF SILICON FILMS WITH SHALLOW- AND DEEP-LEVEL ACCEPTORS

2012 ◽  
Vol 26 (31) ◽  
pp. 1250187 ◽  
Author(s):  
Q. R. HOU ◽  
J. L. SUN ◽  
B. F. GU ◽  
Y. B. CHEN ◽  
Y. J. HE
Keyword(s):  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Deep Level ◽  
Silicon Films ◽  
Thermoelectric Power Factor ◽  
Si Films ◽  
Quartz Substrates ◽  
Co Doped

Crystalline Si films with both shallow- and deep-level acceptors, Al and Cu , have been prepared on glass and quartz substrates by the methods of magnetron sputtering and Al -induced crystallization. Al and Cu are co-added in the Si films intermittently by regular pulse sputtering of Al and Cu targets during deposition of the Si films. By regulating the sputtering times of Al and Cu targets, the amounts of Al and Cu in the Si films can be controlled, and thus the Seebeck coefficient and electrical resistivity of the silicon films can be adjusted. It is found that the Al and Cu co-doped Si film has a larger Seebeck coefficient and a lower electrical resistivity at higher temperatures, as compared with that of only Al -doped Si film. As a result, the thermoelectric power factor of the Al and Cu co-doped Si film is greatly enhanced. The present experimental results will not only help us to understand the basic thermoelectric properties of semiconductors doubly doped with shallow- and deep-level impurities, but also open the possibility of enhancement of thermoelectric power factor by using this concept.

Influence of an interlayer on thermoelectric power factor of HMS film on quartz substrate

2014 ◽  
Vol 28 (11) ◽  
pp. 1450087
Author(s):  
Q. R. Hou ◽  
B. F. Gu ◽  
Y. B. Chen
Keyword(s):  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Quartz Substrate ◽  
Metallic Phase ◽  
The Other ◽  
Thermoelectric Power Factor ◽  
Manganese Silicide ◽  
Lower Electrical Resistivity

The influence of an AlO x oxide or Si interlayer on the thermoelectric power factor of the higher manganese silicide (HMS, MnSi y, y = 1.73–1.75) film deposited on quartz substrate is investigated. The HMS film and the interlayer are prepared on quartz substrate by magnetron sputtering of MnSi 2, Al , Si and Si : B (1 at.% B content) targets. It is found that the metallic phase MnSi is present in the semiconducting HMS film without an interlayer, resulting in a lower Seebeck coefficient, 0.160 mV/K, but not a lower electrical resistivity, 0.021 Ω ⋅cm at 683 K. The thermoelectric power factor is only 122 × 10-6 W/mK2 at 683 K. On the other hand, the metallic phase MnSi disappears and the Seebeck coefficient restores to its high value after using the AlO x oxide or Si interlayer. Besides, the electrical resistivity decreases by using the AlO x oxide or Si : B interlayer. The HMS film with an Si : B interlayer has the highest Seebeck coefficient, 0.247 mV/K, and the lowest electrical resistivity, 0.011 Ω ⋅cm, at 683 K. Thus, the thermoelectric power factor is enhanced and can reach 555 × 10-6 W/mK2 at 683 K.

Quantum Interference Enhanced Thermoelectricity in Ferrocene Based Molecular Junctions

2019 ◽  
Vol 19 (11) ◽  
pp. 7452-7455
Author(s):  
Ashkan Vakilipour Takaloo ◽  
Hatef Sadeghi
Keyword(s):  
Seebeck Coefficient ◽  
Single Molecule ◽  
Power Factor ◽  
Quantum Interference ◽  
Room Temperature ◽  
Thermoelectric Power Factor ◽  
Molecular Scale ◽  
Single Molecule Junctions ◽  
Path Structure ◽  
Single Path

Recent experimental indications of room-temperature quantum interference in the sub-nanometer single molecules suggest that such effects could be utilized to engineer thermoelectric properties of organic single molecule junctions. In this paper, we show that the thermoelectric power factor is significantly enhanced in double path ferrocene cycles compared to the single path counterpart. Due to quantum interference in the double path structure, the Seebeck coefficient is significantly enhanced while the conductance is less affected compared to single path structure. The power factor of the ferrocene cycles are 1–2 orders of magnitude higher than the best organic material reported today. This opens new avenues for future molecular scale organometallic thermoelectricity.

scholarly journals Influence of crystallinity on the thermoelectric power factor of P3HT vapour-doped with F4TCNQ

RSC Advances ◽  
2018 ◽  
Vol 8 (3) ◽  
pp. 1593-1599 ◽  
Author(s):  
Jonna Hynynen ◽  
David Kiefer ◽  
Christian Müller
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Thermoelectric Power Factor ◽  
Order Of Magnitude

The crystallinity of P3HT strongly benefits the electrical conductivity but not Seebeck coefficient, leading to an increase in power factor by one order of magnitude.

Thermoelectric Power Factor of Polycrystalline La0.75Sr0.25Co1-xMnxO3-δCeramics

2009 ◽  
Vol 1166 ◽  
Author(s):  
Julio E. Rodríguez ◽  
J. A. Niño
Keyword(s):  
Transport Properties ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Manganese Content ◽  
Solid State Reaction Method ◽  
Measured Temperature ◽  
Thermoelectric Power Factor ◽  
Temperature Range

AbstractThermoelectric properties of polycrystalline La0.75Sr0.25Co1-xMnxO3-δ(0<x<0.08) (LSCoO-Mn) compounds have been studied. The samples were grown by solid-state reaction method; their transport properties were studied in the temperature range between 100 and 290K, as a function of temperature and the manganese content. The Seebeck coefficient (S) is positive over the measured temperature range and its magnitude increases with the manganese content up to values close to 160 μV/K. The electrical resistivity (ρ) goes from metallic to semiconducting behavior as the Mn level increases, at room temperature, ρ(T) exhibit values less than 4mΩ-cm. From S(T), ρ(T) and κ(T) data, the thermoelectric power factor and the figure of merit were determined. These performance parameters reach maximum values around 18 μW/K2-cm and 0.2, respectively. The observed behavior in the transport properties become these compounds potential thermoelectric materials, which could be used in thermoelectric applications.

scholarly journals Deposition potential controlled structural and thermoelectric behavior of electrodeposited CoSb3 thin films

RSC Advances ◽  
2017 ◽  
Vol 7 (33) ◽  
pp. 20336-20344 ◽  
Author(s):  
Suchitra Yadav ◽  
Brajesh S. Yadav ◽  
Sujeet Chaudhary ◽  
Dinesh K. Pandya
Keyword(s):  
Thin Films ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Room Temperature ◽  
Deposition Potential ◽  
Micro Structure ◽  
Thermoelectric Power Factor

Deposition potential controlled evolution of (420) textured CoSb3 phase and micro structure correlated to enhancement in near room temperature thermoelectric power-factor.

scholarly journals Large thermoelectric power factor at low temperatures in one-dimensional telluride Ta4SiTe4

2017 ◽  
Vol 110 (18) ◽  
pp. 183901 ◽  
Author(s):  
Takumi Inohara ◽  
Yoshihiko Okamoto ◽  
Youichi Yamakawa ◽  
Ai Yamakage ◽  
Koshi Takenaka
Keyword(s):  
Thermoelectric Power ◽  
Power Factor ◽  
Low Temperatures ◽  
Thermoelectric Power Factor ◽  
One Dimensional
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