In situ andex situ grazing incidence diffraction anomalous fine structure study of GaN/AlN quantum dots

2006 ◽  
Vol 243 (7) ◽  
pp. 1519-1523 ◽  
Author(s):  
J. Coraux ◽  
H. Renevier ◽  
M. G. Proietti ◽  
V. Favre-Nicolin ◽  
B. Daudin ◽  
...  
Langmuir ◽  
2004 ◽  
Vol 20 (5) ◽  
pp. 1667-1673 ◽  
Author(s):  
John R. Bargar ◽  
Thomas P. Trainor ◽  
Jeffery P. Fitts ◽  
Scott A. Chambers ◽  
Gordon E. Brown

2015 ◽  
Vol 1810 ◽  
Author(s):  
Tiziana Di Luccio ◽  
Dina Carbone ◽  
Silvia Masala ◽  
Karthik Ramachandran ◽  
Julie Kornfield

ABSTRACTIn this work, we describe the synthesis of CdS nanocrystals in thin polymeric films by in-situ Grazing Incidence Diffraction (GID) and Grazing Incidence Small Angle Scattering (GISAXS). The 2D GISAXS patterns indicate how the precursor structure is altered as the temperature is varied from 25°C to 300°C. At 150°C, the CdS nanocrystals start to arrange themselves in a hexagonal lattice with a lattice parameter of 27 Å. The diffraction intensity from the hexagonal lattice reaches a maximum at 170°C and decreases steadily upon further heating above 220°C indicating loss of symmetry. Correspondingly, the GID scans at 170°C show strong crystalline peaks from cubic CdS nanocrystals that are about 2 nm size. The results indicate that a temperature of 170°C is sufficient to synthesize CdS nanocrystals without degradation of the polymer matrix (Topas) in thin films (about 30nm).


2016 ◽  
Vol 1133 ◽  
pp. 429-433
Author(s):  
Siti Nooraya Mohd Tawil ◽  
Shuichi Emura ◽  
Daivasigamani Krishnamurthy ◽  
Hajime Asahi

Local structures around gadolinium atoms in rare-earth (RE)-doped InGaGdN thin films were studied by means of fluorescence extended X-ray absorption fine structure (EXAFS) measured at the Gd LIII-edges. The samples were doped with Gd in-situ during growth by plasma-assisted molecular beam epitaxy (PAMBE). Gd LIII-edge EXAFS signal from the GaGdN, GdN and Gd foil were also measured as reference. The X-ray absorption near edge structure (XANES) spectra around Gd LIII absorption edge of InGaGdN samples observed at room temperature indicated the enhancement of intensities with the increase of Gd composition. Further EXAFS analysis inferred that the Gd atoms in InGaN were surrounded by similar atomic shells as in the case of GaGdN with the evidence indicating majority of Gd atoms substituted into Ga sites of InGaGdN. A slight elongation of bond length for the 2nd nearest-neighbor (Gd–Ga) of sample with higher Gd concentration was also observed.


1999 ◽  
Vol 60 (4) ◽  
pp. 2516-2521 ◽  
Author(s):  
I. Kegel ◽  
T. H. Metzger ◽  
J. Peisl ◽  
J. Stangl ◽  
G. Bauer ◽  
...  

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