Thin-film-growth characteristics by computer simulation: Nanostructural changes as a function of deposition conditions

2007 ◽  
Vol 244 (9) ◽  
pp. 3115-3136 ◽  
Author(s):  
Mehran Gholipour Shahraki ◽  
Hadi Savaloni
1992 ◽  
Author(s):  
J. Schutkeker ◽  
L. Chen ◽  
F. Wong ◽  
S. Patel ◽  
D. T. Shaw

Vacuum ◽  
2002 ◽  
Vol 67 (2) ◽  
pp. 229-233 ◽  
Author(s):  
R Hrach ◽  
J Šimek ◽  
M Kostern

1999 ◽  
Vol 16 (4) ◽  
pp. 279-281 ◽  
Author(s):  
Feng-min Wu ◽  
Qiao-wen Li ◽  
Qi-peng Zhu ◽  
Zi-qin Wu

2003 ◽  
Vol 169-170 ◽  
pp. 215-218 ◽  
Author(s):  
Y. Kaneko ◽  
Y. Hiwatari ◽  
K. Ohara ◽  
T. Murakami

1984 ◽  
Author(s):  
M. Sikkens ◽  
I. J. Hodgkinson ◽  
F. Horowitz ◽  
H. A. Macleod ◽  
J. J. Wharton

2013 ◽  
Vol 311 ◽  
pp. 451-455
Author(s):  
Liang Wen Ji ◽  
Mei Li Tsai

This paper is based on theoretical methods to study the computer simulation and analysis of the growth of semiconductor thin films. First, according to the traditional theory of thin-film growth, the relationship between the growth morphology and the physical parameters are discussed. Then, fractal theory has been applied to improve the diffusion-limited aggregation (DLA) model. And the simulations of the two-dimensional and three-dimensional thin-film growth are proposed. A computer program of the simulation of the thin-film growth is developed with help of MATLAB. Finally, the results of the simulation of the thin-film growth have been analyzed by the fractal dimension and multifractal spectra. The results of this paper can be applied to the dynamic simulation of nanometer thin-film growth, and an effective simulation tool is to provide the semiconductor process.


1986 ◽  
Vol 25 (1) ◽  
pp. 250142 ◽  
Author(s):  
M. Sikkens ◽  
I. J. Hodgkinson ◽  
F. Horowitz ◽  
H. A. Macleod ◽  
J. J. Wharton

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