A Study on the Computer Simulation for the Fractal Growth of Semiconductor Thin Films

2013 ◽  
Vol 311 ◽  
pp. 451-455
Author(s):  
Liang Wen Ji ◽  
Mei Li Tsai
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Computer Simulation ◽  
Film Growth ◽  
Fractal Theory ◽  
Three Dimensional ◽  
Thin Film Growth ◽  
Physical Parameters ◽  
Traditional Theory ◽  
Semiconductor Thin Films

This paper is based on theoretical methods to study the computer simulation and analysis of the growth of semiconductor thin films. First, according to the traditional theory of thin-film growth, the relationship between the growth morphology and the physical parameters are discussed. Then, fractal theory has been applied to improve the diffusion-limited aggregation (DLA) model. And the simulations of the two-dimensional and three-dimensional thin-film growth are proposed. A computer program of the simulation of the thin-film growth is developed with help of MATLAB. Finally, the results of the simulation of the thin-film growth have been analyzed by the fractal dimension and multifractal spectra. The results of this paper can be applied to the dynamic simulation of nanometer thin-film growth, and an effective simulation tool is to provide the semiconductor process.

Quantitative Image Analysis of Fractal-like Thin Films of Organic Semiconductors

2018 ◽  
Author(s):  
Weikun Zhu ◽  
Erfan Mohammadi ◽  
Ying Diao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Image Analysis ◽  
Fractal Dimension ◽  
Organic Semiconductors ◽  
Film Growth ◽  
Electronic Device ◽  
Significant Control ◽  
Semiconductor Thin Films ◽  
Two Parameters

Morphology modulation offers significant control over organic electronic device performance. However, morphology quantification has been rarely carried out via image analysis. In this work, we designed a MATLAB program to evaluate two key parameters describing morphology of small molecule semiconductor thin films: fractal dimension and film coverage. We then employ this program in a case study of meniscus-guided coating of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C<sub>8</sub>-BTBT) under various conditions to analyze a diverse and complex morphology set. The evolution of morphology in terms of fractal dimension and film coverage was studied as a function of coating speed. We discovered that combined fractal dimension and film coverage can quantitatively capture the key characteristics of C<sub>8</sub>-BTBT thin film morphology; change of these two parameters further inform morphology transition. Furthermore, fractal dimension could potentially shed light on thin film growth mechanisms.

scholarly journals Orientation transitions during the growth of imine covalent organic framework thin films

2017 ◽  
Vol 5 (21) ◽  
pp. 5090-5095 ◽  
Author(s):  
H. Wang ◽  
B. He ◽  
F. Liu ◽  
C. Stevens ◽  
M. A. Brady ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Experimental Observation ◽  
Growth Kinetic ◽  
Film Growth ◽  
Nucleation And Growth ◽  
Thin Film Growth ◽  
Covalent Organic Framework ◽  
Kinetic Processes ◽  
Organic Framework

The first experimental observation of a rare re-entrant transition during COF thin film growth reveals independent nucleation and growth kinetic processes.

Benzoic Acid and Phthalic Acid on Atomically Well-Defined MgO(100) Thin Films: Adsorption, Interface Reaction, and Thin Film Growth

2015 ◽  
Vol 119 (48) ◽  
pp. 26968-26979 ◽  
Author(s):  
Tao Xu ◽  
Susanne Mohr ◽  
Max Amende ◽  
Mathias Laurin ◽  
Tibor Döpper ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Benzoic Acid ◽  
Phthalic Acid ◽  
Film Growth ◽  
Interface Reaction ◽  
Thin Film Growth

Computer simulation of thin film growth with thermal hopping of atoms

1992 ◽  
Author(s):  
J. Schutkeker ◽  
L. Chen ◽  
F. Wong ◽  
S. Patel ◽  
D. T. Shaw
Keyword(s):  
Thin Film ◽  
Computer Simulation ◽  
Film Growth ◽  
Thin Film Growth

Study of thin film growth by means of computer simulation and image analysis

Vacuum ◽  
2002 ◽  
Vol 67 (2) ◽  
pp. 229-233 ◽  
Author(s):  
R Hrach ◽  
J Šimek ◽  
M Kostern
Keyword(s):  
Thin Film ◽  
Computer Simulation ◽  
Image Analysis ◽  
Film Growth ◽  
Thin Film Growth

Surfactant-Mediated Epitaxial Growth of Metallic Thin Films

2010 ◽  
Vol 117 ◽  
pp. 55-61
Author(s):  
Masao Kamiko ◽  
Ryoichi Yamamoto
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Film Growth ◽  
Thin Film Growth ◽  
Growth Mode ◽  
Metallic Thin Films ◽  
Layer By Layer ◽  
Metallic Films ◽  
Heteroepitaxial Growth

The effects of several surfactants on the homoepitaxial and heteroepitaxial growth of metallic films and multilayers have been studied and compared. Our measurements clearly revealed that pre-deposition of a small amount of surfactant prior to the adatom deposition changed thin film growth mode and structure. The pre-deposited surfactant enhanced layer-by-layer (LBL) growth of the homoepitaxial and heteroepitaxial growth of metallic films. The surfactant also enhanced the epitaxial growth of metallic multilayer.

Computer Simulation of Early Stage in Thin-Film Growth

1999 ◽  
Vol 16 (4) ◽  
pp. 279-281 ◽  
Author(s):  
Feng-min Wu ◽  
Qiao-wen Li ◽  
Qi-peng Zhu ◽  
Zi-qin Wu
Keyword(s):  
Thin Film ◽  
Computer Simulation ◽  
Film Growth ◽  
Early Stage ◽  
Thin Film Growth

Computer simulation of thin film growth with defect formation

2003 ◽  
Vol 169-170 ◽  
pp. 215-218 ◽  
Author(s):  
Y. Kaneko ◽  
Y. Hiwatari ◽  
K. Ohara ◽  
T. Murakami
Keyword(s):  
Thin Film ◽  
Computer Simulation ◽  
Defect Formation ◽  
Film Growth ◽  
Thin Film Growth

scholarly journals Computer Simulation Of Thin Film Growth: Applying The Results To Optical Coatings

1984 ◽  
Author(s):  
M. Sikkens ◽  
I. J. Hodgkinson ◽  
F. Horowitz ◽  
H. A. Macleod ◽  
J. J. Wharton
Keyword(s):  
Thin Film ◽  
Computer Simulation ◽  
Film Growth ◽  
Thin Film Growth ◽  
Optical Coatings

EFFECT OF ENERGETIC ION BOMBARDMENT DURING THE GROWTH OF HYDROGENATED AMORPHOUS CARBON THIN FILMS

2015 ◽  
Vol 7 (2) ◽  
pp. 1823-1828
Author(s):  
Asim Aijaz ◽  
Zaheer Uddin
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Amorphous Carbon ◽  
Film Growth ◽  
Ion Bombardment ◽  
High Density ◽  
Thin Film Growth ◽  
Buffer Gas ◽  
Hydrogenated Amorphous Carbon ◽  
Hydrogenated Amorphous

Hydrogenated amorphous carbon (a-C:H) thin film growth using plasma-assisted deposition is studied using Monte Carlo based simulation. The effect of energetic bombardment of the ionized depositing species as well as ionized buffer gas species on the film growth and the resulting film properties is investigated. The ion energies that assist the a-C:H film growth from low density structures to high density structures such as diamond-like carbon (DLC) are used and the effect of energy and composition of the depositing species on the C-C and C-H bonding and the film structure are analyzed. It is found that the ion bombardment favors the formation of a-C:H films with low H contents, high density and superior mechanical strength of the resulting thin films and is therefore an effective way to tailor-made a-C:H thin film growth for specific applications.

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