Cluster perturbation study of 1D electron-hole Hubbard model

2008 ◽  
Vol 245 (12) ◽  
pp. 2729-2732 ◽  
Author(s):  
Kenichi Asano ◽  
Takuto Nishida ◽  
Tetsuo Ogawa
Keyword(s):  

2020 ◽  
Vol 3 (1) ◽  
Author(s):  
Yao Wang ◽  
Yu He ◽  
Krzysztof Wohlfeld ◽  
Makoto Hashimoto ◽  
Edwin W. Huang ◽  
...  

AbstractHow a Mott insulator develops into a weakly coupled metal upon doping is a central question to understanding various emergent correlated phenomena. To analyze this evolution and its connection to the high-Tc cuprates, we study the single-particle spectrum for the doped Hubbard model using cluster perturbation theory on superclusters. Starting from extremely low doping, we identify a heavily renormalized quasiparticle dispersion that immediately develops across the Fermi level, and a weakening polaronic side band at higher binding energy. The quasiparticle spectral weight roughly grows at twice the rate of doping in the low doping regime, but this rate is halved at optimal doping. In the heavily doped regime, we find both strong electron-hole asymmetry and a persistent presence of Mott spectral features. Finally, we discuss the applicability of the single-band Hubbard model to describe the evolution of nodal spectra measured by angle-resolved photoemission spectroscopy (ARPES) on the single-layer cuprate La2−xSrxCuO4 (0 ≤ x ≤ 0.15). This work benchmarks the predictive power of the Hubbard model for electronic properties of high-Tc cuprates.



1991 ◽  
Vol 05 (10) ◽  
pp. 1801-1807
Author(s):  
Z. Y. Weng ◽  
D. N. Sheng ◽  
C. S. Ting

A path-integral formalism of the Hubbard model is used to study the one-dimensional large-U case. It is shown that the bare electron (hole) becomes a composite particle of two decoupled excitations, holon and spinon, together with the non-local string fields. Various correlation functions are analytically derived. The results strongly suggest a U*=∞ fixed point of Hubbard model which is distinct from the weak coupling case.



2002 ◽  
Vol 312-313 ◽  
pp. 522-524
Author(s):  
V. Janiš




2014 ◽  
Vol 28 (10) ◽  
pp. 1450078 ◽  
Author(s):  
Duc-Anh Le

At zero temperature, the Kotliar–Ruckenstein slave boson mean-field approach is applied to the dynamic Hubbard model. In this paper, the influences of the dynamics of the auxiliary boson field on the Mott transition are investigated. At finite boson frequency, the Mott-type features of the Hubbard model is found to be enhanced by increasing the pseudospin coupling parameter g. For sufficiently large pseudospin coupling g, the Mott transition occurs even for modest values of the bare Hubbard interaction U. The lack of electron–hole symmetry is highlighted through the quasiparticle weight. Our results are in good agreement with the ones obtained by two-site dynamical mean-field theory and determinant quantum Monte Carlo simulation.



2010 ◽  
Vol 24 (5) ◽  
pp. 1571-1575 ◽  
Author(s):  
G. H. Bach ◽  
F. Marsiglio


Author(s):  
Martin Peckerar ◽  
Anastasios Tousimis

Solid state x-ray sensing systems have been used for many years in conjunction with scanning and transmission electron microscopes. Such systems conveniently provide users with elemental area maps and quantitative chemical analyses of samples. Improvements on these tools are currently sought in the following areas: sensitivity at longer and shorter x-ray wavelengths and minimization of noise-broadening of spectral lines. In this paper, we review basic limitations and recent advances in each of these areas. Throughout the review, we emphasize the systems nature of the problem. That is. limitations exist not only in the sensor elements but also in the preamplifier/amplifier chain and in the interfaces between these components.Solid state x-ray sensors usually function by way of incident photons creating electron-hole pairs in semiconductor material. This radiation-produced mobile charge is swept into external circuitry by electric fields in the semiconductor bulk.



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