Characteristics of amplified spontaneous emission of high indium content InGaN/GaN quantum wells with various silicon doping conditions
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2015 ◽
Vol 631
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pp. 283-287
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1994 ◽
pp. 251-259
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2007 ◽
Vol 204
(2)
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pp. 364-372
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2017 ◽
Vol 109
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pp. 431-436
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