Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness

2015 ◽  
Vol 117 (5) ◽  
pp. 055709 ◽  
Author(s):  
J. Yang ◽  
D. G. Zhao ◽  
D. S. Jiang ◽  
P. Chen ◽  
J. J. Zhu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Layer Thickness ◽  
Structural Characteristics ◽  
Indium Content ◽  
Cap Layer ◽  
High Indium Content

scholarly journals Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Xiaowei Wang ◽  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Jianjun Zhu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Layer Thickness ◽  
Stark Effect ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
Three Samples ◽  
Measurement Results ◽  
Cap Layer ◽  
The Difference

Abstract Three InGaN/GaN MQWs samples with varying GaN cap layer thickness were grown by metalorganic chemical vapor deposition (MOCVD) to investigate the optical properties. We found that a thicker cap layer is more effective in preventing the evaporation of the In composition in the InGaN quantum well layer. Furthermore, the quantum-confined Stark effect (QCSE) is enhanced with increasing the thickness of GaN cap layer. In addition, compared with the electroluminescence measurement results, we focus on the difference of localization states and defects in three samples induced by various cap thickness to explain the anomalies in room temperature photoluminescence measurements. We found that too thin GaN cap layer will exacerbates the inhomogeneity of localization states in InGaN QW layer, and too thick GaN cap layer will generate more defects in GaN cap layer.

Research on the high indium content InGaAs multiple quantum wells wafers for λ>1.55μm laser diodes

2015 ◽  
Vol 631 ◽  
pp. 283-287 ◽  
Author(s):  
Tao Lin ◽  
Hang Sun ◽  
Haoqing Zhang ◽  
Yonggang Wang ◽  
Nan Lin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Indium Content ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
High Indium Content

Electromodulation spectroscopy of interband transitions in GaInNAsSb/GaAs quantum wells with high indium content

2007 ◽  
Vol 204 (2) ◽  
pp. 364-372 ◽  
Author(s):  
R. Kudrawiec ◽  
H. B. Yuen ◽  
S. R. Bank ◽  
H. P. Bae ◽  
M. A. Wistey ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Indium Content ◽  
Interband Transitions ◽  
High Indium Content

High Indium Content Ingan Films and Quantum Wells.

1997 ◽  
Vol 482 ◽  
Author(s):  
W. Van Der Stricht ◽  
K. Jacobs ◽  
I. Moerman ◽  
P. Demeester ◽  
L. Considine ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Rotating Disk ◽  
Growth Conditions ◽  
Indium Content ◽  
X Ray ◽  
High Indium Content ◽  
Diffraction Patterns ◽  
Very High ◽  
Characterisation Techniques ◽  
Incorporation Efficiency

AbstractInGaN films and InGaN/GaN quantum wells with high indium content have been grown by MOVPE and characterised to evaluate the growth process and the indium incorporation efficiency. The characterisation techniques include photoluminescence, DC X-ray and TEM. The closed spaced vertical rotating disk reactor configuration results in a very high Indium incorporation for InGaN material, compared to other configurations. InGaN layers with an indium composition up to 56 % have been deposited which still exhibit very good optical properties (intense PL emission). The influence of various growth conditions on the InGaN composition and quality have been investigated to optimize the layer quality. TEM diffraction patterns have shown that the ternary InGaN layer can be chemically ordered. The In and Ga atoms occupy respectively the two simple hexagonal sublattice sites related by the glide mirrors and helicoidal axes of the P6 3mc symmetry group of the wurtzite GaN.

Dilute Group III-AsN: Bonding of Nitrogen in GaInAsN and AlGaAsN on GaAs and Realization of Long Wavelength (2.3 μm) GaInAsN QWs on InP

2002 ◽  
Vol 744 ◽  
Author(s):  
D. Serries ◽  
T. Geppert ◽  
K. Köhler ◽  
P. Ganser ◽  
J. Wagner
Keyword(s):  
Quantum Wells ◽  
Cohesive Energy ◽  
Local Strain ◽  
Indium Content ◽  
Group Iii ◽  
Long Wavelength ◽  
Inp Substrate ◽  
High Indium Content ◽  
Nitrogen Bonds ◽  
Highly Strained

ABSTRACTRecent results on the local bonding of nitrogen in dilute GaInAsN and AlGaAsN on GaAs are reviewed, revealing that bonding of nitrogen in GaInAsN is controlled by an interplay between bond cohesive energy and reduction of local strain. Thus, III-N bonding in GaInAsN can be changed from Ga-N to In-N by post-growth thermal annealing. In AlGaAsN, in contrast, nitrogen bonds preferentially to Al, i.e. Al-N bonds are formed, due to the much larger cohesive energy of the Al-N bond. Further, results on indium-rich highly strained GaInAsN quantum wells on InP substrate are reported, showing room-temperature photoluminescence at wavelengths up to 2.3 μm. This result demonstrates the potential of high indium content dilute GaInAsN for InP-based long wavelength diode lasers.

scholarly journals Characteristics of amplified spontaneous emission of high indium content InGaN/GaN quantum wells with various silicon doping conditions

2003 ◽  
Vol 0 (7) ◽  
pp. 2670-2673
Author(s):  
Yung-Chen Cheng ◽  
En-Chiang Lin ◽  
Shih-Wei Feng ◽  
Hsiang-Chen Wang ◽  
C. C. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spontaneous Emission ◽  
Amplified Spontaneous Emission ◽  
Indium Content ◽  
Silicon Doping ◽  
High Indium Content
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