High Indium Content Ingan Films and Quantum Wells.

1997 ◽  
Vol 482 ◽  
Author(s):  
W. Van Der Stricht ◽  
K. Jacobs ◽  
I. Moerman ◽  
P. Demeester ◽  
L. Considine ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Rotating Disk ◽  
Growth Conditions ◽  
Indium Content ◽  
X Ray ◽  
High Indium Content ◽  
Diffraction Patterns ◽  
Very High ◽  
Characterisation Techniques ◽  
Incorporation Efficiency

AbstractInGaN films and InGaN/GaN quantum wells with high indium content have been grown by MOVPE and characterised to evaluate the growth process and the indium incorporation efficiency. The characterisation techniques include photoluminescence, DC X-ray and TEM. The closed spaced vertical rotating disk reactor configuration results in a very high Indium incorporation for InGaN material, compared to other configurations. InGaN layers with an indium composition up to 56 % have been deposited which still exhibit very good optical properties (intense PL emission). The influence of various growth conditions on the InGaN composition and quality have been investigated to optimize the layer quality. TEM diffraction patterns have shown that the ternary InGaN layer can be chemically ordered. The In and Ga atoms occupy respectively the two simple hexagonal sublattice sites related by the glide mirrors and helicoidal axes of the P6 3mc symmetry group of the wurtzite GaN.

scholarly journals Effect of indium content on X- ray diffraction and optical constants of InxSe1-x thin films

2019 ◽  
Vol 14 (29) ◽  
pp. 55-72
Author(s):  
Bushra A. Hasan
Keyword(s):  
Thin Films ◽  
Optical Constants ◽  
Indium Content ◽  
Degree Of Crystallinity ◽  
X Ray Diffraction ◽  
Dispersion Energy ◽  
X Ray ◽  
Evaporation Technique ◽  
High Indium Content ◽  
Diffraction Patterns

Alloys of InxSe1-x were prepared by quenching technique withdifferent In content (x=10, 20, 30, and 40). Thin films of these alloyswere prepared using thermal evaporation technique under vacuum of10-5 mbar on glass, at room temperature R.T with differentthicknesses (t=300, 500 and 700 nm). The X–ray diffractionmeasurement for bulk InxSe1-x showed that all alloys havepolycrystalline structures and the peaks for x=10 identical with Se,while for x=20, 30 and 40 were identical with the Se and InSestandard peaks. The diffraction patterns of InxSe1-x thin film showthat with low In content (x=10, and 20) samples have semicrystalline structure, The increase of indium content to x=30decreases degree of crystallinity and further increase of indiumcontent to x=40 leads to convert structure to amorphous. Increase ofthickness from 300 to 700nm increases degree of crystallinity for allindium content. Transmittance measurements were used to calculaterefractive index n and the extinction coefficient k using Swanepole’smethod. The optical constants such as refractive index (n), extinctioncoefficient (k) and dielectric constant (εr, εi) increases for low indiumcontent samples and decreases for high indium content samples,while increase of thickness increases optical constants for all xvalues. The oscillator energy E0, dispersion energy Ed, and otherparameters have been determined by Wemple - DiDomenico singleoscillator approach.

X-ray reciprocal space mappings of high Indium content InGaN multi-quantum-wells modified by V-shape interfaces

2017 ◽  
Vol 109 ◽  
pp. 431-436 ◽  
Author(s):  
Junjun Xue ◽  
Qing Cai ◽  
Baohua Zhang ◽  
Mei Ge ◽  
Dunjun Chen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Indium Content ◽  
Reciprocal Space ◽  
X Ray ◽  
High Indium Content

Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness

2015 ◽  
Vol 117 (5) ◽  
pp. 055709 ◽  
Author(s):  
J. Yang ◽  
D. G. Zhao ◽  
D. S. Jiang ◽  
P. Chen ◽  
J. J. Zhu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Layer Thickness ◽  
Structural Characteristics ◽  
Indium Content ◽  
Cap Layer ◽  
High Indium Content

Research on the high indium content InGaAs multiple quantum wells wafers for λ>1.55μm laser diodes

2015 ◽  
Vol 631 ◽  
pp. 283-287 ◽  
Author(s):  
Tao Lin ◽  
Hang Sun ◽  
Haoqing Zhang ◽  
Yonggang Wang ◽  
Nan Lin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Indium Content ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
High Indium Content

Electromodulation spectroscopy of interband transitions in GaInNAsSb/GaAs quantum wells with high indium content

2007 ◽  
Vol 204 (2) ◽  
pp. 364-372 ◽  
Author(s):  
R. Kudrawiec ◽  
H. B. Yuen ◽  
S. R. Bank ◽  
H. P. Bae ◽  
M. A. Wistey ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Indium Content ◽  
Interband Transitions ◽  
High Indium Content

Dilute Group III-AsN: Bonding of Nitrogen in GaInAsN and AlGaAsN on GaAs and Realization of Long Wavelength (2.3 μm) GaInAsN QWs on InP

2002 ◽  
Vol 744 ◽  
Author(s):  
D. Serries ◽  
T. Geppert ◽  
K. Köhler ◽  
P. Ganser ◽  
J. Wagner
Keyword(s):  
Quantum Wells ◽  
Cohesive Energy ◽  
Local Strain ◽  
Indium Content ◽  
Group Iii ◽  
Long Wavelength ◽  
Inp Substrate ◽  
High Indium Content ◽  
Nitrogen Bonds ◽  
Highly Strained

ABSTRACTRecent results on the local bonding of nitrogen in dilute GaInAsN and AlGaAsN on GaAs are reviewed, revealing that bonding of nitrogen in GaInAsN is controlled by an interplay between bond cohesive energy and reduction of local strain. Thus, III-N bonding in GaInAsN can be changed from Ga-N to In-N by post-growth thermal annealing. In AlGaAsN, in contrast, nitrogen bonds preferentially to Al, i.e. Al-N bonds are formed, due to the much larger cohesive energy of the Al-N bond. Further, results on indium-rich highly strained GaInAsN quantum wells on InP substrate are reported, showing room-temperature photoluminescence at wavelengths up to 2.3 μm. This result demonstrates the potential of high indium content dilute GaInAsN for InP-based long wavelength diode lasers.

The optical and structural properties of InGaN epilayers with very high indium content

1999 ◽  
Vol 59 (1-3) ◽  
pp. 292-297 ◽  
Author(s):  
S.C Bayliss ◽  
P Demeester ◽  
I Fletcher ◽  
R.W Martin ◽  
P.G Middleton ◽  
...  
Keyword(s):  
Structural Properties ◽  
Indium Content ◽  
High Indium Content ◽  
Very High

scholarly journals Characteristics of amplified spontaneous emission of high indium content InGaN/GaN quantum wells with various silicon doping conditions

2003 ◽  
Vol 0 (7) ◽  
pp. 2670-2673
Author(s):  
Yung-Chen Cheng ◽  
En-Chiang Lin ◽  
Shih-Wei Feng ◽  
Hsiang-Chen Wang ◽  
C. C. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spontaneous Emission ◽  
Amplified Spontaneous Emission ◽  
Indium Content ◽  
Silicon Doping ◽  
High Indium Content

CO2 Adsorption Performance of N-Doped Ordered Microporous Carbons Templated from Zeolite HY

2011 ◽  
Vol 284-286 ◽  
pp. 2102-2105 ◽  
Author(s):  
Jin Zhou ◽  
Wen Li ◽  
Shu Ping Zhuo
Keyword(s):  
Photoelectron Spectroscopy ◽  
Carbon Deposition ◽  
X Ray Diffraction ◽  
Step Method ◽  
X Ray ◽  
Microporous Carbons ◽  
Adsorption Performance ◽  
Basic Nitrogen ◽  
Diffraction Patterns ◽  
Very High

Several microporous carbons were prepared by a two-step method using zeolite HY as a template, and were used as CO2 adsorbents. X-ray diffraction patterns present that the structure regularity of the zeolite has been well-replicated by the templated carbons. X-ray photoelectron spectroscopy confirms that the prepared carbons possess abundant nitrogen-containing groups due to the carbon deposition of acetonitrile. The prepared carbons show high CO2 adsorption capacity due to its very high microporous surface area and abundant basic nitrogen-containing groups.

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